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    diode smd ED 56a

    Abstract: No abstract text available
    Text: FSYC055D, F SYCO55R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs juiy 1998 Features Description • 70A Note , 60V, r[js(ON) = 0.012Q T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s


    OCR Scan     		FSYC055D, SYCO55R 36MeV/mg/cm2 FSYC055R diode smd ED 56a PDF