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    FSYC055R Search Results

    FSYC055R Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FSYC055R Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSYC055R1 Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSYC055R3 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSYC055R3 Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSYC055R4 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSYC055R4 Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF

    FSYC055R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2E12

    Abstract: FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4 Rad Hard in Fairchild for MOSFET
    Text: FSYC055D, FSYC055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs December 2001 Features Description • 70A Note , 60V, rDS(ON) = 0.012Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSYC055D, FSYC055R 2E12 FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4 Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4
    Text: FSYC055D, FSYC055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 70A Note , 60V, rDS(ON) = 0.012Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSYC055D, FSYC055R 2E12 FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4

    2E12

    Abstract: FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4
    Text: FSYC055D, FSYC055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 70A Note , 60V, rDS(ON) = 0.012Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSYC055D, FSYC055R 2E12 FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4

    smd-2 3-pad

    Abstract: No abstract text available
    Text: FSYC055D, FSYC055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 70A Note , 60V, rDS(ON) = 0 012i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSYC055D, FSYC055R smd-2 3-pad

    diode smd ED 56a

    Abstract: No abstract text available
    Text: FSYC055D, F SYCO55R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs juiy 1998 Features Description • 70A Note , 60V, r[js(ON) = 0.012Q T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s


    OCR Scan     		PDF FSYC055D, SYCO55R 36MeV/mg/cm2 FSYC055R diode smd ED 56a