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    SY100E193JCTR Search Results

    SY100E193JCTR Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SY100E193JCTR Micrel Semiconductor ERROR DETECTION/ CORRECTION CIRCUIT Original PDF
    SY100E193JCTR Synergy Semiconductor ERROR DETECTION / CORRECTION CIRCUIT Scan PDF

    SY100E193JCTR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E160

    Abstract: E193 MC10193 SY100E193 SY10E193
    Text: Micrel, Inc. SY10E193 SY100E193 SY10E193 ERROR DETECTION/ CORRECTION CIRCUIT FEATURES SY100E193 DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance


    Original     		PDF SY10E193 SY100E193 SY10/100E193 MC10193. M9999-032006 E160 E193 MC10193 SY100E193 SY10E193

    E160

    Abstract: E193 MC10193 SY100E193 SY10E193 SECDED
    Text: SY10E193 SY100E193 FINAL ERROR DETECTION/ CORRECTION CIRCUIT FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance


    Original     		PDF SY10E193 SY100E193 SY10/100E193 MC10193. 12-bit SY100E193JC J28-1 SY100E193JCTR E160 E193 MC10193 SY100E193 SY10E193 SECDED

    SECDED

    Abstract: E160 E193 MC10193 SY100E193 SY10E193
    Text: ERROR DETECTION/ CORRECTION CIRCUIT FEATURES SY10E193 SY100E193 DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance


    Original     		PDF SY10E193 SY100E193 SY10/100E193 MC10193. 12-bit SY100E193JC J28-1 SY100E193JCTR SECDED E160 E193 MC10193 SY100E193 SY10E193

    Untitled

    Abstract: No abstract text available
    Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,


    OCR Scan     		PDF SY10E193 SY100E193 lnternal75KÂ MC10E/100E193 28-pin SY10/100E193

    Untitled

    Abstract: No abstract text available
    Text: ERROR DEFECTION SYN ER G Y iv iU E iy j C O R R E C T I O N CIRCl.lH ' V 1Q0 E193 S E M IC O N D U C TO R BH3353I31TS! FEATURES • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register


    OCR Scan     		PDF lntemal75K MC10E/100E193 28-pin BH3353I31TS! SY10/100E193 SY10E193JC SY10E193JCTR SY100E193JC SY100E193JCTR J28-1

    Untitled

    Abstract: No abstract text available
    Text: ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR DESCRIPTION FEATURES • Hamming code generation ■ Extended 100E V ee range of -4 .2 V to -5 .5 V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully com patible with industry standard 10KH,


    OCR Scan     		PDF SY10E193 SY100E193 lnternal75KÂ C10E/100E193 10/100E SY10E193JC J28-1 SY10E193JCTR SY100E193JC

    Untitled

    Abstract: No abstract text available
    Text: * ERR OR DETECTION/ C O RR ECT IO N CIRCUIT SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,


    OCR Scan     		PDF SY10E193 SY100E193 lnternal75KD MC10E/100E193 28-pin SY10/100E193

    Untitled

    Abstract: No abstract text available
    Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,


    OCR Scan     		PDF SY10E193 SY100E193 lnternal75KÂ MC10E/100E193 28-pin SY10/100E193

    block diagram code hamming

    Abstract: ot 112 generate the parity after shift register block SECDED E160 E193 MC10193 SY100E193 SY10E193 p4350
    Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY S E M IC O N D U C T O R SY10E193 SY100E193 DESCRIPTION FEATURES • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register


    OCR Scan     		PDF SY10E193 SY100E193 lnternal75K MC10E/100E193 SY10/100E193 SY10E193JC J28-1 SY10E193JCTR SY100E193JC block diagram code hamming ot 112 generate the parity after shift register block SECDED E160 E193 MC10193 SY100E193 p4350