MARKING SY SOT23
Abstract: MARKING sg SOT23 2SA1162 2SC2712 MARKING SO
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG
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OT-23
2SA1162
2SC2712.
-100mA
-10mA
MARKING SY SOT23
MARKING sg SOT23
2SA1162
2SC2712
MARKING SO
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1 2 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG
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OT-23
2SA1162
2SC2712.
-100mA
-10mA
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2SA1162
Abstract: 2SC2712
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP FEATURES z Low noise : NF= 1dB(Typ.),10dB (Max.) z Complementary to 2SC2712. z Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG
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OT-23-3L
OT-23-3L
2SA1162
2SC2712.
-100mA
-10mA
2SA1162
2SC2712
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2SA162
Abstract: No abstract text available
Text: 2SA162 SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. 2.80 1.60 0.15 1.90 MARKING: SO , SY , SG Dimensions in inches and (millimeters)
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2SA162
OT-23-3L
OT-23-3L
2SC2712.
-100u
-100mA
-10mA
2SA162
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UT9435H Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UTC UT9435H provide excellent RDS ON , low gate charge and fast switching speed. It has been optimized for power management applications. ̈ ̈ SY M BOL
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UT9435H
UT9435H
UT9435HL-AA3-R
UT9435HG-AA3-R
UT9435HL-S08-R
UT9435HG-S08-R
UT9435HL-S08-T
UT9435HG-S08-T
UT9435HL-AE3-R
UT9435HG-AE3-R
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diodes SY 200
Abstract: diode sy 526
Text: M A XIM U M RATINGS EA CH D IO DE Sy m b o l Value Reverse V oltage Vr 50 V dc Forw ard Current *F 200 m Adc *FM (surge) 500 m Adc Sy m b o l M ax Unit PD 225 mW 1.8 m W /T RtfJA 556 °c/w Pd 300 mW 2.4 m W /X RflJA 417 °C/W Tj< ^sta - 55 to + 1 50 DC Rating
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BAV74LT1
OT-23
O-236AB)
diodes SY 200
diode sy 526
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diodes SY 200
Abstract: SY 165
Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES ISSUE 3 - JANUARY 1996 FM M V2101 FM M V2109 O_ PIN CONFIGURATION PARTMARKING DETAILS SEE TUNING CHARACTERISTICS 1 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L VALUE UNIT 30 V Reverse Voltage
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V2101
V2109
f-250M
FMMV2101i
FMMV2103
FMMV2104
FMMV2105
FMMV2107
FMMV21Q8
diodes SY 200
SY 165
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BSS64R
Abstract: BSS64 BSS63
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSS64 * COMPLEM ENTARY TYPE - BSS63 PARTMARKING DETAILS - B S S6 4 = U3 B SS64 R = U6 ABSOLUTE M AXIM UM RATINGS PARAM ETER VALUE SY M BO L V CBO 120 Collector-Emitter Voltage V CEO 80 Emitter-Base Voltage V EBO
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BSS63
BSS64
BSS64R
BSS64
10OjtA
100nA
400itA
400ftA
DS108
BSS64R
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JANUARY 1996_ FEATURES * ^ D S I o n F 5 i2 * 60 V o lt V DS C O M PLEM ENTAR Y TYPE • ZVP3306F PAR TM ARKING DETAIL - MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M BO L
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ZVP3306F
ZVN3306F
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Untitled
Abstract: No abstract text available
Text: FM M T5209 FM M T5210 SOT23 NPN SILICON PLANAR SM ALL SIGNAL TRANSISTO RS RARTMARKING DETAILS: FM M T5209 - 2Q FM M T 5210 - 2R ABSOLUTE M AXIM UM RATINGS SY M B O L PARAM ETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current
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T5209
T5210
T5209
FMMT5209
FMMT5210
100/iA,
500/iA,
15kHz
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Untitled
Abstract: No abstract text available
Text: ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES I SSUE 2 -M A R CH 1995_ 2 _ DIODE PIN CONNECTION 1 t PARTMARKING DETAIL ZC2800E - E6 ZC2811E-E8 ZC5800E-E9 3 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Power Dissipation at Tamb- 25°C
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ZC2800E
ZC2811E
ZC5800E
ZC2800E
ZC2811E-E8
ZC5800E-E9
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR M EDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSU E 3 - NOVEMBER 1995 P A R T M A R K IN G D E T A IL - FMMT495 O_ §: 495 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L VALUE UNIT Collector-Base Voltage
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FMMT495
100nA
VctP150V
250mA,
500mA,
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ZVN3310F
Abstract: F11 SOT23 DS371 SS50 SS-50 SS501
Text: ZVN3310F SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET P A R T M A R K IN G D ETA IL - ZVN3310F - M F ABSOLUTE M AXIM UM RATINGS PARAMETER SY M B O L Drain-Source Voltage Continuous Drain Current @ Tamb=25‘C Pulsed Drain Current Gate-Source Voltage
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ZVN3310F
DS373
F11 SOT23
DS371
SS50
SS-50
SS501
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SY SOT23
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAIL Î F M M V 109 - 4A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150 °C
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V/25V,
SY SOT23
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KD transistor
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 - SEPTEMBER 95 Q_ C O M PLIM E N TA R Y TYPE - BSS63 PAR TM ARKING DETAIL - BSS64 - BSS64 U3 BSS64R - U6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L C o lle c to r-B a s e V o lta g e
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BSS64
BSS63
BSS64
BSS64R
300us.
KD transistor
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MARKING SY SOT23
Abstract: SY SOT23 MARKING SOT23-3 LF MARKING P8A
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 -SEPTEMBER 1995 O DIODE PIN CONNECTION r-W rW •► 1 3 SOT23 PART MARKING DETAIL - P8A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L VALUE UNIT rrm 100 V *F A V 250 mA ^S M 3.0 A 330
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FLLD261
-200m
FLLD263
MARKING SY SOT23
SY SOT23
MARKING SOT23-3 LF
MARKING P8A
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ZVP3306F
Abstract: ZVP3310F DS400
Text: ZVP3306F SOT23 P CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET PARTM ARK1NG DETA IL - ZVP3306F - M L ABSOLUTE M A X IM U M RATINGS PARAMETER SY M B O L Drain-Source Voltage Continuous Drain Current @ Tamb=25'C Pulsed Drain Current Gate-Source Voltage M ax Power Dissipation @ Tamb=25"C
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ZVP3306F
-150mA,
-150mA
Vdd--25V,
DS402
ZVP3310F
DS403
DS400
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSU E 2 - JANUARY 1996_ P A R T M A R K IN G D E T A IL S - 3B ABSOLUTE M A X IM U M RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SY M B O L VALUE UNIT V CBO 30 V V CEO 15 V
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100MHz
60MHz,
200MHz
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Untitled
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAIL Î BBY31 - S I ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150 °C P.o.
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BBY31
V/25V,
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSU E 3 - JANUARY 1996 FEATURES * * High ÎT-900M H Z M in M axcapacitance=1pF * Low noise 4.5dB Wl A fe ', P A R T M A R K IN G D ET A IL -1 7 9 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L
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T-900M
100MHz
200MHz
FMMT5179
00CH337
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR FMMT5179 ISSU E 3 - JANUARY 1996 FEATURES * High fT=900M H z M in * M a x capacitance=1pF * Low noise 4.5dB m i P A R T M A R K IN G D ET A IL -1 7 9 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L
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FMMT5179
-10mA,
f-100MHz
200MHz
200MHz
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Untitled
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 3 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAIL Î F M M V 3 1 0 2 -4 C ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150
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V/25V,
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSU E 2 - NOVEMBER 1995 FEATU RES * High f-^eöOMHz * M a xim u m capacitance 0.7pF * K Low noise < 5dB at 500M H z P A R T M A R K IN G D E T A IL - 3EZ SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Collector-Emitter Voltage
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FMMTH10
100MHz
500MHz,
ci34c
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SIU CO N PLANAR RF TRANSISTOR FMMTH10 ISSUE 2 - NOVEMBER 1995 FEATURES * High fT=650M Hz * * M a xim u m capacitance 0.7pF Low noise < 5 dB at 500M H z c m P A R T M A R K IN G D ET A IL - l 3EZ SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L
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FMMTH10
ir25V.
100MHz
500MHz,
300jis.
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