LX109
Abstract: No abstract text available
Text: SC192 Synchronous Buck Converter with Integrated Power Devices POWER MANAGEMENT Description Features 2.7V to 7V Input Range Output Adjustable from 0.75V to Vin Fixed Frequency or PSAVE for Maximum The SC192 is a synchronous step-down converter with
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SC192
SC192
700mA
LX109
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diode sy 715
Abstract: SC192 SC192EVB SC192IMLTR SC192IMLTRT SY 715
Text: SC192 2.7V to 5.5V Input Synchronous Buck Converter w/Integrated Power Devices POWER MANAGEMENT Description Features 2.7V to 5.5V Input Range Output Adjustable from 0.75V to Vin Fixed Frequency or PSAVE for Maximum The SC192 is a synchronous step-down converter with
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SC192
700mA
MLPD-10
SC192
MLPD-10,
diode sy 715
SC192EVB
SC192IMLTR
SC192IMLTRT
SY 715
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diode sy 715
Abstract: diode sy 710 8-R 2R2 SC192 SC192EVB SC192IMLTR SC192IMLTRT
Text: SC192 Synchronous Buck Converter with Integrated Power Devices POWER MANAGEMENT Description Features 2.7V to 7V Input Range Output Adjustable from 0.75V to Vin Fixed Frequency or PSAVE for Maximum The SC192 is a synchronous step-down converter with
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SC192
700mA
MLPD-10
SC192
MLPD-10,
diode sy 715
diode sy 710
8-R 2R2
SC192EVB
SC192IMLTR
SC192IMLTRT
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sy 710 diode
Abstract: diode sy 710 diode sy 715
Text: SC192 2.7V to 5.5V Input Synchronous Buck Converter w/Integrated Power Devices POWER MANAGEMENT Description Features K 2.7V to 5.5V Input Range K Output Adjustable from 0.75V to Vin K Fixed Frequency or PSAVE for Maximum The SC192 is a synchronous step-down converter with
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SC192
SC192
MLP-10,
sy 710 diode
diode sy 710
diode sy 715
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diode sy 710
Abstract: MLPD-10 C192 SC192 SC192EVB SC192IMLTR SC192IMLTRT sy 710 diode
Text: SC192 2.7V to 5.5V Input Synchronous Buck Converter w/Integrated Power Devices POWER MANAGEMENT Description Features K 2.7V to 5.5V Input Range K Output Adjustable from 0.75V to Vin K Fixed Frequency or PSAVE for Maximum The SC192 is a synchronous step-down converter with
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SC192
SC192
MLPD-10,
diode sy 710
MLPD-10
C192
SC192EVB
SC192IMLTR
SC192IMLTRT
sy 710 diode
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LCBT67S
Abstract: marking 3U 3T 3C diode N91E-AADA-35-1 IESNA RP 27 LRTB GFTG marking 3U 3T 3C diode 3E 3G LCBT67C LED 5050 WHITE CODE C CQ7P.EC-KSKU-5O8Q IEC62471
Text: Light Emitting Diodes LED ge 88 - 92 11 12 Light Emitting Diodes General Information Safety Instructions The use of new chip technologies means that OSRAM LEDs are delivering higher and higher levels of optical performance. Thus, even eye safety issues might increasingly need to be considered.
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diamond sx 600
Abstract: Q65110A8176 Q65110A1954 LA E6SF Q65110A8177 LRTBGFTG Q65110A9038 LW QH8G-Q2S2-3K5L-1 Q65110A2395 pointled
Text: Light Emitting Diodes 11 Light Emitting Diodes . 11 Safety Instructions . 13
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sy 170
Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Text: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170
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N4001.
sy 170
SY 356
SY 360 05
sy 710
sy 360
Dioden SY 250
byx 21
SY 320
sy710
Halbleiterbauelemente DDR
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diode sy 710
Abstract: sy 710 diode DL 711 PHILIPS
Text: Philips Semiconductors Product specification 16-bit buffer/line driver; inverting 3-State FEATURES 74LVC16240A PIN CONFIGURATION • 5 volt tolerant inputs/outputs for interfacing w ith 5V logic • W ide supply voltage range of 1.2V to 3.6V • C om plies with JED EC standard no. 8-1A
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16-bit
74LVC16240A
74LVC16240A
oC16240A
diode sy 710
sy 710 diode
DL 711 PHILIPS
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mikroelektronik ddr
Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
Text: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden
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diode sy 710
Abstract: No abstract text available
Text: DATA SHEET ' PHOTOCOUPLERS PS2706-1, PS2706-2, PS2706-4 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE SOP MULTI PHOTOCOUPLER - NEPOC Series - DESCRIPTION The P S 2706-1, -2 and -4 series are optically coupled isolator containing GaAs light em itting diodes and an NPN
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PS2706-1,
PS2706-2,
PS2706-4
diode sy 710
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTOCOUPLERS PS2707-1, PS2707-2, PS2707-4 HIGH ISOLATION VOLTAGE AC INPUT, HIGH COLLECTOR VOLTAGE SOP MULTI PHOTOCOUPLER - NEPOC Series - DESCRIPTION The PS2707-1, -2 and -4 series are optically coupled isolator containing GaAs light emitting diodes and an NPN
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PS2707-1,
PS2707-2,
PS2707-4
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varactor ghz
Abstract: gaas varactor diodes ND3139-5M ND3139-5N ND3139-5S GaAs varactor diode power varactor
Text: i N E C / CALIFORNIA 1SE D NEC T-oi~n b427414 O O O n Q b b MM WAVE GaAs VARACTO R D IO DE OUTLINE D IM EN SIO N S FEATURES ND3139-5S ND3139-5M ND3139-5N Units In mm O UTLINE S S • LOW C O N V ER SIO N LO SS: Lo = 7.5 dB TYP at f = 20 GHz to 40 GHz, P in = +16 dBm
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L427414
ND3139-5S
ND3139-5M
ND3139-5N
b427414
ND3139-5S,
ND3139-5M,
LTPD10%
varactor ghz
gaas varactor diodes
ND3139-5N
GaAs varactor diode
power varactor
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Halbleiterbauelemente DDR
Abstract: mikroelektronik Heft 12 VEB mikroelektronik information applikation Mikroelektronik Information Applikation Transistoren DDR information applikation mikroelektronik mikroelektronik Heft sy 710 applikation heft
Text: m o t ^ o e l e l - c f a n c i r Information Applikation Bauelemente der Leistungs elektronik SW77 Bipolare SchaltTransistoren i i l - c m t n r D o lk in î^ e lB l-c ta n a r iik Information Applikation H e f t : BAUELEMENTE DER LEISTUNGSELEKTRONIK
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diode sy 710
Abstract: sy 710 diode
Text: MITSUBISHI TRAN SISTOR M OD U LES \ QM300DY-24B ¡ HIGH POWER SWITCHING U SE INSULATED TYPE QM300DY-24B • lc • Vcex • hFE Collector current. 300A Collector-emitter voltage 1200V DC current gain . 750
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QM300DY-24B
E80276
E80271
diode sy 710
sy 710 diode
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sy 710 diode
Abstract: IC 6757 diode sy 710 2N6758 2N6757
Text: POWER MOSFET TRANSISTORS , JTX 200 Volt, 0.4 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability • Qualified to M IL-S-19500/542A 2N6757 J' JTX' JTXV 2N6758 DESCRIPTION
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2N6757
2N6758
IL-S-19500/542A
2N6757
sy 710 diode
IC 6757
diode sy 710
2N6758
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d773
Abstract: diode sy 710 sy 710 diode
Text: T2 UNITRODE CORP 9347963 Ï F | c]347i:ib3 □ OlOVL.fl 7 | ~ 92D UNITRODE CORP 10768 D r POWER MOSFET TRANSISTORS t S 500 Volt, 3.0 Ohm N-Channel UFN 822 UFN823 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling
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UFN823
d773
diode sy 710
sy 710 diode
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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k3882
Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Text: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d
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diode sy 710
Abstract: sy 710 diode buz77a
Text: SIEMENS BUZ 77 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 77 A Vbs 600 V b 2.7 A ^bS on 4Q Package Ordering Code TO-220 AB C67078-S1320-A3 Maximum Ratings Parameter Symbol Continuous drain current Values Unit
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O-220
C67078-S1320-A3
diode sy 710
sy 710 diode
buz77a
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diode sy 710
Abstract: sy 710 diode transistor buz 90 transistor buz 350 buz90
Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vbs 600 V b 4.5 A ^DS on Package Ordering Code 1 .6 « TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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O-220
C67078-S1321-A2
D5155
diode sy 710
sy 710 diode
transistor buz 90
transistor buz 350
buz90
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DG308
Abstract: DG308ADY DG309CJ DG308A DG308AAK DG308ABK DG308ACJ DG309 DG309DY
Text: C A L O G I C CÔRP 4flE D • 1844352 0000^44 1 « C G C Quad Monolithic SPST CMOS Analog Switches -T -S t-H DG308A/DG309 Preliminary Product Announcement FEATURES: DESCRIPTION: • • • • • Calogic's DG308A and DG309 are quad single-pole single-throw analog switches designed for high speed
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DG308A/DG309
130ns)
DG308A
DG309
DG308
DG308ADY
DG309CJ
DG308AAK
DG308ABK
DG308ACJ
DG309DY
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diode sy 710
Abstract: K685
Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on P o w e rM O S transistor V o l t a g e c l a m p e d lo gic level F E T with t e m p e r a t u r e s e n s i n g d i o d e s G E N E R A L DESCRI PTIO N Protected N-channel enhancement
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BUK9120-48TC
diode sy 710
K685
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Untitled
Abstract: No abstract text available
Text: óéconsystems' A TDK Group f Company SSI 32M7011 Hall-Sensorless Motor Speed Commutator Advance Information December 1991 DESCRIPTION FEATURES The Spindle Motor Commutator in conjunction with a companion microcontroller, provides starting, acceler ating, precise rotational speed regulation functions,
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32M7011
12-pole,
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