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    SWITCHING TRANSISTOR 30V NPN Search Results

    SWITCHING TRANSISTOR 30V NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SWITCHING TRANSISTOR 30V NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N3904E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original     		2N3904E 2N3906E. x10-4 100mA Width300 PDF

    2N3904

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N3904 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original     		2N3904 2N3906. x10-4 2N3904 PDF

    SBC548

    Abstract: Transistor 4501 ic SBC558 SBC-558
    Text: SBC548 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with SBC558 Ordering Information Type NO. Marking SBC548 SBC548 Package Code TO-92


    Original     		SBC548 SBC558 KST-9026-000 100mA, SBC548 Transistor 4501 ic SBC558 SBC-558 PDF

    2N3906V

    Abstract: 2N3904V
    Text: SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original     		2N3904V 2N3906V. x10-4 100mA Width300 2N3906V 2N3904V PDF

    BC848U

    Abstract: BC858U
    Text: BC848U Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858U Ordering Information Type NO. Marking BC848U Package Code BS SOT-323


    Original     		BC848U BC858U OT-323 KST-3021-001 100mA, BC848U BC858U PDF

    2N3904U

    Abstract: 2N3906U
    Text: SEMICONDUCTOR 2N3904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original     		2N3904U 2N3906U. x10-4 100mA Width300 2N3904U 2N3906U PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N3904C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original     		2N3904C 2N3906C. 10Hz15 100MHz x10-4 100mA Width300 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original     		2N3904V 2N3906V. x10-4 PDF

    BC848F

    Abstract: BC858F
    Text: 7 BC848F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SA SOT-23F


    Original     		BC848F BC858F OT-23F KST-2091-000 100mA, BC848F BC858F PDF

    BC848F

    Abstract: BC858F
    Text: BC848F 7 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SOT-23F SA


    Original     		BC848F BC858F OT-23F KST-2091-000 BC848F BC858F PDF

    BC848UF

    Abstract: BC858UF
    Text: 7 BC848UF Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858UF Ordering Information Type NO. Marking BC848UF BS Package Code SOT-323F


    Original     		BC848UF BC858UF OT-323F KST-3040-001 100mA, BC848UF BC858UF PDF

    BC848UF

    Abstract: Transistor BC858UF
    Text: 7 BC848UF Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858UF Ordering Information Type NO. Marking BC848UF BS Package Code SOT-323F


    Original     		BC848UF BC858UF OT-323F KST-3040-001 100mA, BC848UF Transistor BC858UF PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 BC848UF Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858UF Ordering Information Type NO. Marking BC848UF BS Package Code SOT-323F


    Original     		BC848UF BC858UF OT-323F KST-3040-001 100mA, PDF

    BC848

    Abstract: Transistor SA sot-23 BC858
    Text: BC848 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858 Ordering Information Type NO. Marking BC848 Package Code SA SOT-23 : hFE rank


    Original     		BC848 BC858 OT-23 KST-2008-000 100mA, BC848 Transistor SA sot-23 BC858 PDF

    BC848U

    Abstract: BC858U
    Text: BC848U NPN Silicon Transistor Descriptions PIN Connection • General purpose application • Switching application 3 Features • High voltage : VCEO=30V • Complementary pair with BC858U 1 2 Ordering Information SOT-323 Type NO. Marking Package Code BC848U


    Original     		BC848U BC858U OT-323 KSD-T5D031-000 BC848U BC858U PDF

    2N3904C

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N3904C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES ᴌLow Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) N E K @VCE=30V, VEB=3V. ᴌExcellent DC Current Gain Linearity.


    Original     		2N3904C 2N3906C. 300ns 1N916 2N3904C PDF

    2SCR542P

    Abstract: No abstract text available
    Text: Midium Power Transistors 30V / 5A 2SCR542P  Dimensions (Unit : mm)  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) (1) (2) (3) 2) High speed switching


    Original     		2SCR542P 100mA) R0039A 2SCR542P PDF

    2N3735

    Abstract: 2n3734
    Text: GENERAL PURPOSE SILICON NPN TRANSISTOR 2N3734 / 2N3735 • Hermetic TO-39 Metal Package • General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated 2N3734 2N3734 50V 30V Symbols VCBO VCEO VEBO IC PD


    Original     		2N3734 2N3735 2N3735 O-205AD) PDF

    2n3734

    Abstract: No abstract text available
    Text: GENERAL PURPOSE SILICON NPN TRANSISTOR 2N3734 / 2N3735 • Hermetic TO-39 Metal Package • General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated 2N3734 2N3734 50V 30V Symbols VCBO VCEO VEBO IC PD


    Original     		2N3734 2N3735 2N3734 100mA O-205AD) PDF

    2SCR512P

    Abstract: No abstract text available
    Text: Midium Power Transistors 30V / 2A 2SCR512P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 700mA / 35mA) (1) (2) (3) 2) High speed switching


    Original     		2SCR512P 700mA R0039A 2SCR512P PDF

    2N3904U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEjj=50nA Max. , IBL=50nA(Max.) @Vce=30V, Veb=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage


    OCR Scan     		2N3906TJ. 2N3904U 42db0 Ta-25 2N3904U PDF

    2N3904

    Abstract: 2N3906
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3904 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x =50nA Max. , IBL=50nA(Max.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity.


    OCR Scan     		2N3904 2N3906. 300ns 300//S, 2N3904 2N3906 PDF

    transistor kn3904

    Abstract: KN3904 KN3906
    Text: SEMICONDUCTOR TECHNICAL DATA KN3904 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , @VCe=30V, V eb=3V. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @Ic=50mA, IB=5mA.


    OCR Scan     		KN3904 KN3906. transistor kn3904 KN3904 KN3906 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , IBL=50nA(Max.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage


    OCR Scan     		2N3904U 2N3906U. PDF