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    SWITCH TRANSISTOR PNP OR NPN Search Results

    SWITCH TRANSISTOR PNP OR NPN Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SWITCH TRANSISTOR PNP OR NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Photoelectrics Retro-reflective, Transistor Output Type PMR • Range: 10 m • Modulated, infrared light • Rated operational voltage: 10 to 40 VDC • Output: 200 mA, NPN or PNP • Make or break switching function switch selectable • Fully protected


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    MB02

    Abstract: Power One PMP 6p power switching
    Text: Photoelectrics Retro-reflective, Polarized, Transistor Output Type PMP • Range: 6 m • Modulated, visible light, polarized • Rated operational voltage: 10 to 40 VDC • Output: 200 mA, NPN or PNP • Make or break switching function switch selectable


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    MB02

    Abstract: No abstract text available
    Text: Photoelectrics Retro-reflective, Transistor Output Type PMR • Range: 10 m • Modulated, infrared light • Rated operational voltage: 10 to 40 VDC • Output: 200 mA, NPN or PNP • Make or break switching function switch selectable • Fully protected


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    transistor c-111

    Abstract: TRANSISTOR 111
    Text: PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V -PNP bipolar transistors designed for use as a genHigh-Current Gain Bandwidth Product fT : eral-purpose amplifier or switch in applications that


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    PDF PN2907A MMBT2907A PZT2907A PN2907A, MMBT2907A, PZT2907A OT-223) PN2222A, MMBT2222A, transistor c-111 TRANSISTOR 111

    Untitled

    Abstract: No abstract text available
    Text: PN2907A / MMBT2907A / PZT2907A 60 V PNP General-Purpose Transistor Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a generalHigh-Current Gain Bandwidth Product fT : purpose amplifier or switch in applications that require


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    PDF PN2907A MMBT2907A PZT2907A PN2907A, MMBT2907A, PZT2907A OT-223) PN2222A, MMBT2222A,

    Untitled

    Abstract: No abstract text available
    Text: Photoelectrics Diffuse-reflective, Transistor Output Type PMD • Range: 800 mm • Modulated, infrared light • Rated operational voltage: 10 to 40 VDC • Output: 200 mA, NPN or PNP • Make or break switching function switch selectable • LED-indication for target detected


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    PN2907A

    Abstract: PN2222A/2907A
    Text: PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor Features Description • High DC Current Gain hFE Range: 100 – 300 The PN2907A, MMBT2907A, and PZT2907A are 60 V -PNP bipolar transistors designed for use as a general-purpose amplifier or switch in applications that


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    PDF PN2907A MMBT2907A PZT2907A PN2907A, MMBT2907A, PZT2907A OT-223) OT-223 PZT2907A) PN2222A/2907A

    OMRON H7ET manual

    Abstract: No abstract text available
    Text:  Self-powered Time Counter H7ET Subminiature Time Counters With Enhanced Appearance and Features  Large display with 8.6 mm 0.338 in height  Available with backlit LCD  PNP/NPN DC voltage input available  Seven digits, time range 0 to 3999d23.9h  Key-protect switch to prevent front


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    PDF 3999d23 999h59m59s 9999h59 4/IP66 1-800-55-OMRON M064C-E3-1 OMRON H7ET manual

    OMRON H7et manual

    Abstract: H7ET-N-B 7-segment diagram and application note two digit 7-segment display with decimal single digit 7 Segment Display diagram GHz PNP transistor omron proximity sensor POWER SUPPLY WITH 7 SEGMENT DISPLAY EN50082-2 circuit diagram water level sensor
    Text: R Self-Powered Time Counter H7ET Subminiature Time Counters With Enhanced Appearance and Features Large display with 8.6 mm 0.338 in height Available with backlit LCD PNP/NPN DC voltage input available Seven digits, time range 0 to 3999d23.9h Key-protect switch to prevent front resetting


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    PDF 3999d23 999h59m59s 9999h59 4/IP66 1-800-55-OMRON OMRON H7et manual H7ET-N-B 7-segment diagram and application note two digit 7-segment display with decimal single digit 7 Segment Display diagram GHz PNP transistor omron proximity sensor POWER SUPPLY WITH 7 SEGMENT DISPLAY EN50082-2 circuit diagram water level sensor

    PPCP

    Abstract: transistor BU 210 SS TRANSISTOR namur npn transistors,pnp transistors transistor DJ marking transistor BU 110 NPCP dj bk
    Text: Proximity Sensors Inductive ABS Housing Types DJ, Ø 77 and EI, Ø 77 • ABS housing, Ø 77 mm • Sensing distance: 40 mm • Power supply: 8.2 VDC NAMUR 24 VDC • Output: Namur (DIN 19234) Transistor NPN or PNP, make or break switching • Protection: Reverse polarity


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    PDF DJ40/EI PPCP transistor BU 210 SS TRANSISTOR namur npn transistors,pnp transistors transistor DJ marking transistor BU 110 NPCP dj bk

    OMRON H7ec manual

    Abstract: TRANSISTOR 12 GHZ EN50082-2 RF NPN POWER TRANSISTOR 2.5 GHZ 7-segment diagram and application note transistor npn high speed switching omron H7EC H7EC-N-B transistor CR NPN push switch
    Text: R Self-Powered Tachometer H7EC Subminiature Total Counters With Improved Appearance and Features Large display with 8.6 mm 0.338 in height Available with backlit LCD PNP/NPN DC voltage input available Eight-digits, counting range 0 to 99999999 Key-protect switch to prevent front resetting


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    PDF 4/IP66 1-800-55-OMRON OMRON H7ec manual TRANSISTOR 12 GHZ EN50082-2 RF NPN POWER TRANSISTOR 2.5 GHZ 7-segment diagram and application note transistor npn high speed switching omron H7EC H7EC-N-B transistor CR NPN push switch

    cnc wiring

    Abstract: inductive proximity sensor npn PROXIMITY inductive ic "inductive Proximity Sensor" transistor npn 150 volt npn transistor 70 volt 800 volt PNP transistor
    Text: Proximity Sensors Inductive Rectangular Plast Housings Types IC, ID, Cable and Plug • • • • Nickel-plated brass housings Sensing distance: 2 or 4 mm For flush mounting ID25 or non-flush mounting (IC17) Output: IC 17: Transistor, NPN/PNP, make or break


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    PROXIMITY inductive ic

    Abstract: inductive sensor IC
    Text: Proximity Sensors Inductive Rectangular, Nickel-plated Brass Housing Types IC, ID, Cable and Plug • • • • Nickel-plated brass housings Sensing distance: 1.5 or 5 mm For flush mounting Output: IC 08: Transistor, NPN/PNP, make switching ID 25: Transistor, NPN/PNP, make switching or


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    OMRON H7ec manual

    Abstract: H7EC battery replacement omron h7ec H7EC N COUNTER H7EC-N-B H7EC-NV-B EN50081-1 EN50082-2 H7EC-NV RELAY LOGIC LIFT control circuit
    Text: R Self-Powered Count Totalizer H7EC Subminiature Total Counters With Improved Appearance and Features Large display with 8.6 mm 0.338 in height Available with backlit LCD PNP/NPN DC voltage input available Eight-digits, counting range 0 to 99999999 Key-protect switch to prevent front resetting


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    PDF 4/IP66 1-800-55-OMRON OMRON H7ec manual H7EC battery replacement omron h7ec H7EC N COUNTER H7EC-N-B H7EC-NV-B EN50081-1 EN50082-2 H7EC-NV RELAY LOGIC LIFT control circuit

    Untitled

    Abstract: No abstract text available
    Text: Proximity Sensors Inductive Rectangular, Nickel-plated Brass Housing Types IC, ID, Cable and Plug • • • • Nickel-plated brass housings Sensing distance: 1.5 or 5 mm For flush mounting Output: IC 08: Transistor, NPN/PNP, normally open ID 25: Transistor, NPN/PNP, normally open


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    jfet differential transistor

    Abstract: JFET 401 U402 N CHANNEL FET
    Text: LS318 LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES ∆re =1Ω TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC Maximum Temperatures Storage Temperature Range Operating Junction Temperature


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    PDF LS318 250mW 500mW LS318 jfet differential transistor JFET 401 U402 N CHANNEL FET

    J201 Replacement

    Abstract: 2N5019 "direct replacement"
    Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation


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    PDF IT124 IT124 250mW 500mW J201 Replacement 2N5019 "direct replacement"

    Untitled

    Abstract: No abstract text available
    Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


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    PDF LS310 LS311 LS312 LS313 250MHz 250mW 500mW

    Untitled

    Abstract: No abstract text available
    Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1


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    PDF LS301 LS302 LS303 100MHz 250mW 500mW LS301ithic

    Untitled

    Abstract: No abstract text available
    Text: IT120A IT120 IT121 IT122 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 E1 C2 TA= 25°C unless otherwise noted IC Collector Current


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    PDF IT120A IT120 IT121 IT122 250mW 500mW

    TRANSISTOR M5

    Abstract: Transistor npn BSF 70
    Text: y Proximity Sensors Inductive ant r r a Short body, Stainless Steel Housing sw r a e Types IA, M5 5y • Miniature stainless steel housing M5 • Short body • Sensing distance: 1,2 mm • Power supply: 10 to 30 VDC • Output: Transistor NPN/PNP, make or break switching


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    J201 spice

    Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
    Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


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    PDF LS3250 OT-23 J201 spice dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310

    transistor pnp 3015

    Abstract: EC1808TBOP EC1808NPCP EC1808PPCP EC1808NPOP
    Text: Proximity Sensors Capacitive Thermoplastic Polyester Housing Types EC, M18, M30, Cable • Thermoplastic polyester housing, cylindrical • Diameter: M18, M30 • Adjustable sensing distance • Power supply: 10 to 40 VDC 20 to 250 VAC • Output: Transistor NPN or PNP, make or


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    diode m5p

    Abstract: switch transistor pnp or npn NPN switching power transistor npn transistor 70 volt IA 05 IA05BSF m5x0.5 DIMENSIONS transistor BSF
    Text: y ant r r a sw r a e 5y Proximity Sensors Inductive Short body, Stainless Steel Housing Types IA, M5 w/short-circuit protection • Miniature stainless steel housing M5 • Short body • Sensing distance: 1.0 mm • Power supply: 10 to 30 VDC • Output: Transistor NPN/PNP, make or break switching


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