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    SW 3205 Search Results

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    LTC3205EUF#PBF Analog Devices Multidisplay LED Cntr Visit Analog Devices Buy
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    ADV3205JSTZ Analog Devices 16 X 16 VIDEO CROSSPOINT Visit Analog Devices Buy
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    SW 3205 Price and Stock

    Samtec Inc TSW-132-05-F-D

    Headers & Wire Housings Classic PCB Header Strips, 0.100" pitch
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    Mouser Electronics TSW-132-05-F-D 92
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    Samtec Inc TSW-132-05-T-D

    Headers & Wire Housings Classic PCB Header Strips, 0.100" pitch
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    Mouser Electronics TSW-132-05-T-D 38
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    Samtec Inc TSW-132-05-G-D

    Headers & Wire Housings Classic PCB Header Strips, 0.100" pitch
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    Mouser Electronics TSW-132-05-G-D 20
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    Samtec Inc TSW-132-05-G-S

    Headers & Wire Housings Classic PCB Header Strips, 0.100" pitch
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    Mouser Electronics TSW-132-05-G-S 6
    • 1 $3.43
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    • 1000 $1.86
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    Samtec Inc TSW-132-05-G-T

    Headers & Wire Housings Classic PCB Header Strips, 0.100" pitch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TSW-132-05-G-T
    • 1 $8.24
    • 10 $8.12
    • 100 $6.52
    • 1000 $5.13
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    SW 3205 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC3910 Power Transistors 2SC3910 Silicon NPN Triple-Diffused Junction Mesa Type Package D im ensions High Speed Sw itching 20.5max. • Features • • • • High speed sw itching High collector-base voltage VCbo W ide area of safety operation (ASO)


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    PDF 2SC3910

    2SC4152

    Abstract: uas 111
    Text: Power Transistors 2SC 4152 2SC4152 Silicon NPN Triple-Diffused Planar Type Package D im ensions High Breakdow n Voltage, High Speed Sw itching U n it ! m m • Features 4 .4 m a x . 1 0 .2 m a x • High sp e e d sw itch in g • High c o lle c to r-b a s e v o lta g e


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    PDF 2SC4152 2SC4152 uas 111

    DARLINGTON TRANSISTOR ARRAYS 2A

    Abstract: PNP DARLINGTON ARRAYS 60V transistor npn ic2a DARLINGTON ARRAYS PNP PU4319 6 "transistor arrays" ic "Darlington Transistor" PANASONIC
    Text: Power Transistor Arrays PU4319 PU4319 Package D im ensions Silicon NPN/PNP Planar Darlington Type Power A m plifie r, Sw itching • Features • H igh D C c u r re n t gain It f e • High s p e e d sw itch in g • 2 N P N e le m e n ts + 2 P N P e le m e n ts


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    PDF PU4319 -20mA bci32fl52 0017DSS DARLINGTON TRANSISTOR ARRAYS 2A PNP DARLINGTON ARRAYS 60V transistor npn ic2a DARLINGTON ARRAYS PNP PU4319 6 "transistor arrays" ic "Darlington Transistor" PANASONIC

    C2833A

    Abstract: 2SC2833 2SC2833A 2SC2841 3PES WT-150
    Text: PANASONIC INDL/ELEK-CSEHI} 72C D | t,c]32flS4 000^572 □ 3 5 - / 3 2SC2833, 2SC2833A 2SC2833, 2SC2833A > IJ ZJ > N P N = S 3 £ ifc ff 2 /S i N P N Triple Diffused >y 51 v ^ f f l / H i g h Speed Sw itching • ¡tt • ^ /F e a tu r e s X -f 'y -f-> ^ j S * fiiv->0/H ig h speed sw itching


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    PDF 35-S3 2SC2833, 2SC2833A 2SC2833 10VX0 10VX1A al00X100X2mm C2833A 2SC2833A 2SC2841 3PES WT-150

    KD510

    Abstract: 2SK319 2SK320
    Text: HI T A C H I /{ OPTO EL ECTRO NI CS > "44962Ö5 H I T A C H I / OPTOELECTRONICS! 73 DE I 44c][3205 mOlOOlM - • 73C 10014 D 2SK319,2SK320 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance.


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    PDF 2SK319 2SK320 449620b' 2SK319, KD510 2SK320

    749P

    Abstract: 2SD1528
    Text: P o w e r T ra n s is to rs 2SD1528 2SD1528 Silicon NPN Epitaxial Planar Type Package Dim ensions Power Sw itching 1 0 .5 + 0 .5 • Features 9 .8 m a x. • H igh s p e e d sw itch in g 7.6m in • H igh c o l l e c to r -b a s e v o lta g e V cbo • G o o d lin e a rity o f D C c u r r e n t g ain (Iikf )


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    PDF 2SD1528 SC-46 220AB 20Uhi 749P 2SD1528

    2SD1735

    Abstract: No abstract text available
    Text: Power Transistors 2SD1735 2SD1735 Silicon PNP Triple-Diffused Planar Type • Package Dimensions Horizontal Deflection Output U n it : mm ■ Features • High breakdow n voltage, high reliability • High speed sw itching • Wide area of safety operation ASO


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    PDF 2SD1735 100X100X2mm 75kHz Tc-25Â

    2SC3798

    Abstract: 2SC3798A
    Text: Power T ransistors 2SC3798, 2SC3798A 2SC3798, 2SC3798A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it : mm • Features L15.5m ax. 6.9min. • High speed sw itching • High collector-base voltage


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    PDF 2SC3798, 2SC3798A 2SC3798 dis100 2SC3798A

    2SC3527

    Abstract: 41EA pnp 500v
    Text: Pow er Transistors b13EñS2 DDlb445 2SC3527 DtT 2SC3527 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it : ' n n • Features 5.2m ax. 15.5max. 6.9min. • High speed sw itching r* • High collector-base voltage


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    PDF b13EflS2 DDlb445 2SC3527 D01b4Hb 180wH DDlb447 2SC3527 41EA pnp 500v

    2SB1180

    Abstract: 2SB1180A 2SD1750 2SD1750A
    Text: Power T ransistors 2SB1180, 2SB1180A 2SB1180, 2SB1180A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching . Complementary Pair with 2SD1750, 2SD1750A • Features ‘ • High DC c u rre n t gain Iif e • High sp eed sw itching


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    PDF 2SB1180, 2SB1180A 2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SD1750A

    IR LFN

    Abstract: LFN ir 2SD1320
    Text: Power Transistors 2SD1320 2S D 1320 Package Dim ensions U n it ! m m Silicon NPN Triple-D iffused Planar Darlington Type M edium Speed Power Sw itching • Features • 60V Zener diode built-in betw een C and B • Very small fluctuation in breakdown voltages


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    PDF 2SD1320 IR LFN LFN ir 2SD1320

    NJ 15 U1 W

    Abstract: No abstract text available
    Text: Power Transistors 2SD1538, 2SD1538A 2SD1538, 2SD1538A Silicon NPN Epitaxial Planar Type • Package D im ensions Low V oltage Sw itching C om plem enta ry Pair w ith 2SB1070, 2SB1070A U n it I mm ■ Features 8.7 r • Low collector-em itter saturation voltage VcEisao


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    PDF 2SD1538, 2SD1538A 2SB1070, 2SB1070A 2SD1538 2SD1538A NJ 15 U1 W

    2SC3508

    Abstract: ic003
    Text: Power T ransistors 2SC3508 G 0 1 b 4 3 T flbb 2SC3508 Package Dimensions U nit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 5.2max. 1 5 ,5 m a x . 6.9min. High Breakdown Voltage, High Speed Switching 3.2 Epoxy resin • Features • High speed sw itching


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    PDF G01b43T 2SC3508 15Duty 001b441 2SC3508 ic003

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SC 3975 2SC3975 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it ! mm 5.2m ax. • Features o • High sp ee d sw itching 21.0 + 0.5 , (V cbo • Wide area of sa fety operation (ASO)


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    PDF 2SC3975

    2SD1480

    Abstract: lm 738 2SD1517
    Text: Power Transistors 2SD1517 2SD1517 Silicon NPN Epitaxial Planar Type Package Dim ensions Power Am plifier, Power Sw itching • Features Unit ! mm 4.4max. 10.2max. 5.7m ax. • Low collector-em itter saturation voltage Vcem K M 2 . 9 max I F • Good linearity of DC cu rren t gain (h ^ )


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    PDF 2SD1517 2SD1480) 3265S 0Qlb74T 2SD1480 lm 738 2SD1517

    2SC4421

    Abstract: V11N TF012
    Text: Power Transistors 2SC4421 2SC4421 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • High sp eed sw itching • High collecto r-b a se v o lta g e ' V c b o • Wide area o f sa fety operation (ASO)


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    PDF 2SC4421 2SC4421 V11N TF012

    2SD1318

    Abstract: No abstract text available
    Text: Power Transistors 2SD1318 2SD1318 Package Dim ensions U n it ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max, 8.7 n Medium Speed Power Sw itching l.lm a x 6.5m ax. r— i • Features • 30V Zener diode built-in between C and B • Very small fluctuation in breakdown voltages


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    PDF 2SD1318 2SD1318

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1277, 2SD1277A 2SD1277, 2SD1277A Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Switching Complementary Pair with 2SB951, 2SB951A • Features • H igh D C c u r r e n t g ain hre • H igh s p e e d sw itc h in g


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    PDF 2SD1277, 2SD1277A 2SB951, 2SB951A

    2SC3797

    Abstract: 2SC3797A SC-65
    Text: Power T ransistors 2SC3797, 2SC3797A 2SC3797, 2SC3797A Silicon PNP Triple-Diffused Plariar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • H igh sp e e d sw itc h in g • H igh c o lle c to r-b a s e v o ltag e V cbo


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    PDF 2SC3797, 2SC3797A- 2SC3797A 2SC3797 2SC3797A SC-65

    2SK1331

    Abstract: No abstract text available
    Text: P o w er F-MOS FET 2SK1331 2SK1331 Silicon N-Channel Power F-M O S FET Package Dimensions • Features • Low R r d <o„ = 0 .3 8 ii typ.) Unit: mm 5.2max. . 15.5max. 6.9min. • High speed sw itching t f= 100ns (typ.) • Secondary breakdow n free 3.2


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    PDF 2SK1331 100ns b132fi52 Q017174 2SK1331

    K2040

    Abstract: 2SK807
    Text: Power F-MOS FET 2SK807 2SK807 Silicon N-channel Power F-M O S F E T Package Dimensions • Features • Low ON resistan ce Rds on : R ds (on) = 1.1ft (typ.) Unit: mm • High sw itching ra te : tf= 7 0 n s (typ.) 5.2max. 15.5max • No secondary breakdow n


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    PDF 2SK807 171Q4 K2040 2SK807

    2SK770

    Abstract: No abstract text available
    Text: P ow er F-MOS FET 2SK770 2SK770 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON resistan ce RDs on : RDS (on) = 3 .5 il (typ.) • High sw itching ra te : tf= 3 0 n s (typ.) • No secondary breakdow n • High breakdow n voltage


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    PDF 2SK770 O-220 VDO-I50V 2SK770

    2SD1529

    Abstract: No abstract text available
    Text: Power Transistors 2SD1529 2S D 1529 Silicon NPN Epitaxial Planar Type • Package D im ensions Power Sw itching ■ Features • High speed switching • High collector-base voltage V cbo • Good linearity of DC cu rre n t gain (htE) • “N T ype” package configuration with a cooling fin for direct soldering


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    PDF 2SD1529 2SD1529

    2SK996

    Abstract: 1128A FET 1127
    Text: P o w er F-MOS FET 2SK 996 2SK996 Silicon N-channel Power F-M O S FET Package Dim ensions • Features • Low ON resistan ce R ds on : R d s (on) = 1 .2 ii (typ.) • High sw itching ra te : tf = 60ns (typ.) • No secondary breakdown Unit: mm .10 2rr L4m ax


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    PDF 2SK996 171BS 001712b 2SK996 1128A FET 1127