varactor diode X-band
Abstract: x-band varactor diode EN5770 SVD302 GaAs varactor diode
Text: Ordering number : EN5770 Hyperabrupt Junction Type GaAs Varactor Diode SVD302 X Band VCO, PLO Features Package Dimensions • High Q. • High capacitance ratio. unit: mm 1274 [SVD302] 1 : Cathode 2 : Anode Specifications Absolute Maximum Ratings at Ta=25°C
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EN5770
SVD302
SVD302]
230/10s
10mAh
varactor diode X-band
x-band varactor diode
EN5770
SVD302
GaAs varactor diode
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN5770A SVD302 Hyperabrupt Junction Type GaAs Varactor Diode SVD302 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274A [SVD302] 0.5 1.0 max 1.4 1 : Cathode 2 : Anode 1.5 4.4 1.5 1 2 0.5 0.1
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ENN5770A
SVD302
SVD302]
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D2502
Abstract: SVD302 sanyo TA-3713 ta3713
Text: Ordering number : ENN5770B SVD302 Hyperabrupt Junction Type GaAs Varactor Diode SVD302 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD302] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode
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ENN5770B
SVD302
1274B
SVD302]
D2502
SVD302
sanyo
TA-3713
ta3713
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ph-8 diode
Abstract: varactor diode X-band gaas varactor diodes x-band diode
Text: Package Type GaAs Schottky Barrier Diodes Single diodes Electrical characteristics Ta = 25 tl Absolute maximum ratings Package type Type No. Rs@ IF C tsf Applications lo (mA) VR (V) Cl (pF) f (MHz) Rs CQ) Vf @ If t £ @ f' PLO If (mA) LC (dB) (GHz) Pio (mW)
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CJ0V/Cj25V
CJQV0CJ25
DTN12G
T0202
T0202
ph-8 diode
varactor diode X-band
gaas varactor diodes
x-band diode
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VEI 005
Abstract: IR 010 SBL121 SBL221 SBL801 SBL801A SBL802 SBL802A SBL803 SBL803A
Text: GaAs D io d e s 2 a l e G a A s S c h o t t k y B a r r ier D i o d e s B e a m lead Typ e The Sanyo SBL Series are suited for MIC mounting due to small parasitic ingredient, conversion loss and milli-wave use available. S i n g 1e T y p e Absolute Maximum Ratings
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Ii-10uA
SBL121
SBL801
11i-wave,
SBL802
10sec
10jiA
SVD101
SVD102
SVD201
VEI 005
IR 010
SBL121
SBL221
SBL801
SBL801A
SBL802A
SBL803
SBL803A
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sma3001
Abstract: SGF25
Text: SA\YO New Microwave Device Product Line P D C for P H S f o r t e r m ¡ n a ! 1.9 G H z te r m in a / ( 8 0 0 M H z ) P PW e r A m p . w * S P F2 020 A ¡ li t *I fitter SPM2001A * S MA 3Q A nt . S. W 2SC5534 Low > B uffer Amo «SMA30QI Noi«e Amp. Pupi«»«''
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SPM2001A
2SC5534
SMA30QI
SPM0103A
SPM3202
20dBm
SPM3205
SPM3252
24dBm
sma3001
SGF25
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SPD-221
Abstract: No abstract text available
Text: SAfiYO G a A s Di o d e s 1 ale GaAs Schottky P a c k a g e d 'I'ype B a r r 1 e r Di o d e s The Sanyo SPD Se ri e s a re packaged type GaAs Schottky b a r r i e r diodes designed fo r co nverters, modul at o rs , d e t e c t o r s th at can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18. 0GHz).
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SGD102,
SGD102T)
SBL801A,
SBL802A,
SBL803A,
SBL804A,
10sec
11i-wave,
SVD101
SVD102
SPD-221
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d1878
Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Text: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258
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A1527
A1528
A1537
A1540
A1573
A1574
A1575
A1580
A1590
A1607
d1878
D1887
C4106
D1880
D1825
transistors D1878
c3987
C4161
D1651
k1459
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