2SA1046
Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275
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2N6274
2N6275
2N6277
2N6377
2N6277*
POWER32
TIP73B
TIP74
2SA1046
2N6275 equivalent
BU108
TR TIP2955
MOTOROLA 2N6277
BU806 Complement
BU326
BU100
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TERMOPAR tipo k
Abstract: TERMOPAR tipo j crouzet MAS 10 programming TERMOPAR k crouzet MAS programming sonda ph TERMOPAR TIPO T millenium 2 crouzet programming manual sensor termopar tipo j Crouzet Millenium 2 sa 20
Text: Microcontrol Soluciones de automatismos adaptadas a sus aplicaciones 08 Panorama b Controladores lógicos b Relés de control b Temporizadores www.crouzet.com Una empresa de Panorama Microcontrol Editorial Sumario Reconocido desde hace más de 40 años por la calidad de sus temporizadores,
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2SC124
Abstract: BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 80 Vdc (Min) — 2N6436
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2N6436
2N6437
2N6438
2N6338
2N6341
2N6438*
Devi32
TIP73B
2SC124
BU108
2SA1046
BDX54
2SC102
BC 458
BU326
BU100
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Motorola case 77
Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc
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MJE200*
MJE210*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
Motorola case 77
2N3055
BU108
2sc15
bdw93c applications
BU326
BU100
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MJE34 equivalent
Abstract: BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 60 Vdc (Min) — 2N5879, 2N5881
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2N5879,
2N5881
2N5880,
2N5882
2N5879
2N5880*
2N5882*
TIP73B
TIP74
MJE34 equivalent
BU108
2SA1046
2n5882
BDX54
2N5880
BC 107 npn transistor pin configuration
2SB56
BU326
BU100
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equivalent to tip162
Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) — 2N6338
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2N6338
2N6339
2N6340
2N6341
2N6436
Continu32
TIP73B
TIP74
TIP74A
TIP74B
equivalent to tip162
2SA1046
2N3055
BU108
2n6258
BU326
BU100
BD262
buv23
2n5632
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ST T4 3580
Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc
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MJD243*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
ST T4 3580
BU108
bdw93c applications
transistor bd136 in dpak packaging
2SC103
ir411
TRANSISTOR BC 384
BDX54
2SB56
IC 714
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varistor 472 SUS
Abstract: RFP22N10 rpf22n10 AN-7514 AN9321 C150 IAS150 Fairchild UL file MOS transistor transient overvoltages in 220V 355a transistor
Text: Single Pulse Unclamped Inductive Switching: A Rating System Application Note orpoion, minctor, ngle lse ncla ped duce witch g: A ating sm Failure Mechanisms Early Power MOSFET devices, not designed to be rugged, failed when the parasitic bipolar transistor indigenous to the
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AN-7514
AN9321)
varistor 472 SUS
RFP22N10
rpf22n10
AN-7514
AN9321
C150
IAS150
Fairchild UL file MOS transistor
transient overvoltages in 220V
355a transistor
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RFP22N10
Abstract: varistor 472 SUS rpf22n10 Landis AN9321 C150 IAS150 VARISTOR TESTING INTERSIL IAS25
Text: Single Pulse Unclamped Inductive Switching: A Rating System Application Note Unexpected transients in electrical circuits are a fact of life. The most potentially damaging transients enter a circuit on the power source lines feeding the circuit. Power control and
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varistor 472 SUS
Abstract: Transient Voltage Suppression Devices, Harris RFP22N10 355a transistor landis rpf22n10 IAS25 AN9321 C150 IAS150
Text: Harris Semiconductor No. AN9321 Harris Power February 1994 SINGLE PULSE UNCLAMPED INDUCTIVE SWITCHING: A RATING SYSTEM Author: Harold Ronan Unexpected transients in electrical circuits are a fact of life. The most potentially damaging transients enter a circuit on
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AN9321
SSD-450)
varistor 472 SUS
Transient Voltage Suppression Devices, Harris
RFP22N10
355a transistor
landis
rpf22n10
IAS25
AN9321
C150
IAS150
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varistor 472 SUS
Abstract: rpf22n10 Fairchild UL file MOS transistor UHC MOS AN75 AN-7514 C150 IAS150 RFP22N10 uis test
Text: Single Pulse Unclamped Inductive Switching: A Rating System Application Note Failure Mechanisms Early Power MOSFET devices, not designed to be rugged, failed when the parasitic bipolar transistor indigenous to the vertical DMOS process turned on. Figure 1 shows a cross
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AN-7514
varistor 472 SUS
rpf22n10
Fairchild UL file MOS transistor
UHC MOS
AN75
AN-7514
C150
IAS150
RFP22N10
uis test
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AN-7514
Abstract: varistor 472 SUS bt 2328 RFP22N10 rpf22n10 C150 IAS150
Text: Single Pulse Unclamped Inductive Switching: A Rating System Application Note Title N93 bt nse cla ed uce itch :A ting sm utho Unexpected transients in electrical circuits are a fact of life. The most potentially damaging transients enter a circuit on the power source lines feeding the circuit. Power control and
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UZF4115
Abstract: UZF411 A6061-T6 uzfxmr1 UZFXMR2 COPPER C3604 UZFTNB8 UZFTP8 M1021 UZFRV41
Text: UZF41/42/43 series 0.6.10 13:16 Page 1 NEW OPTICAL FIBER DIGITAL/AUTO/MANUAL SETTING TYPE PHOTOELECTRIC SENSORS UZF41/42/43 Series SIMPLE OPERATION WITH INNOVATIVE JOG SWITCH SETTING AND MANUAL SETTING TYPE Simple Operation UZF41/42 series Uses an innovative highly operable jog
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UZF41/42/43
UZF41/42/43
UZF41/42
UZF42
UZF42
UZF43
12-turn
UZF4115
UZF411
A6061-T6
uzfxmr1
UZFXMR2
COPPER C3604
UZFTNB8
UZFTP8
M1021
UZFRV41
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CS 213 Polymer protection
Abstract: CS 213 Polymer 39-29-3046 MAX6590 MAX1544 irf 343 so-8 Multimeter tektronix dmm 157 IRF 548 C71-C78 100w amp sanyo
Text: MAXIM 19-2870; Rev 0; 04/03 MAX1544/MAX1545 MAX1544/MAX1545 Evaluation Kits Pentium is a registered trademark of Intel Corp. Hammer is a trademark of Advanced Micro Devices, Inc. QuickPWM is a trademark of Maxim Integrated Products, Inc. Features
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MAX1544/MAX1545
MAX1544/MAX1545
MAX1980
CS 213 Polymer protection
CS 213 Polymer
39-29-3046
MAX6590
MAX1544
irf 343 so-8
Multimeter tektronix dmm 157
IRF 548
C71-C78
100w amp sanyo
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Untitled
Abstract: No abstract text available
Text: IBM2520L8767 IBM Processor for ATM Resources Features pendent: one can use SRAM devices while the other uses DRAM devices. A single array of memory can be used in systems whose sus tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications.
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IBM2520L8767
102Mb/s.
400Mb/s
chapt07
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10A 600 VOLT DIODE
Abstract: transistor 13a 600v westinghouse DIODES 827 d transistor KE72
Text: 7294621 POWEREX INC ]>Ë 72T4b21 0000141 5 | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E F Q H J K L M N P Q R S T U ' Inches 4.13 Max 3.86 ±.01 3.190 .236 .472 1.33 Max .335 .709 .827 .276 .453 .472 .394 .531 .197 1.181 .787 .118 .213 T-33-35 10 Amperes
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72T4b21
T-33-35
KE724S0110
T-33-
KE72450110
10A 600 VOLT DIODE
transistor 13a 600v
westinghouse DIODES
827 d transistor
KE72
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pj 86 diode
Abstract: pj 84 diode pj 48 diode PJ 63 diode ke92 Westinghouse diode WESTINGHOUSE ELECTRIC motor ac WESTINGHOUSE dc motor KE924503 pj 17 diode
Text: 7294621 POWEREX INC Tâ Dim A B C D E F G H J K L M N O P Q R S T U V w X y b Ë J 72TML51 ODODTSO t. Inches 3.70 3.150+,020 .768 .79 .394 3.386 2.913 2.48 1.89 .472 .236 .118 .197 .551 .709 .059 .217 1.50 1.22 1.181 .339 .118 .295 T-33-35 Millimeters 94 80±.25
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72TML51
T-33-35
KE92450310
33I35
pj 86 diode
pj 84 diode
pj 48 diode
PJ 63 diode
ke92
Westinghouse diode
WESTINGHOUSE ELECTRIC motor ac
WESTINGHOUSE dc motor
KE924503
pj 17 diode
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KE724502
Abstract: DARLINGTON 20A WESTINGHOUSE ELECTRIC powerex cd KE72
Text: 7 2 9 4 6 2 1 POWERËX INC T Ë Ï>I"| 72=141.51 00QCH47 b | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E Inches 4.80 4.33 3.86 .236 .472 .213+ ¿°08 F G H I J K L M N O P .394 .709 .512 .276 1.02 1.5 1.18 .787 .315 .157 T-33-35 20 Amperes 450 Volts
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00QCH47
T-33-35
KE72450210
KE7245021Û
KE72450210
KE724502
DARLINGTON 20A
WESTINGHOUSE ELECTRIC
powerex cd
KE72
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rca 40411
Abstract: 40411 transistor 40411 RCA 40411 transistor rca 40407 rca 40408 RCA 40408 transistor RCA-40406 40408 40411 rca
Text: G E SOLI» STATE 3 8 7 5 08 1 DE | 3fl?Safll D0174bS 4 □ 1 G E” S O L I D STATE Ó1E 17465 D u e n e ra i-ru ro o s e Ho^ r J i ^ n f ll f t t n r a T -3 3 -/3 -' File Numbei'219 40406> 40407j 40408, 40411 TERM IN AL DESIGNATIONS Silicon N-P-N and P-N-P
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50fil
0D17MbS
RCA-40406,
174btÃ
2CS-I232MS
rca 40411
40411
transistor 40411
RCA 40411 transistor
rca 40407
rca 40408
RCA 40408 transistor
RCA-40406
40408
40411 rca
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BIPOLAR TRANSISTOR
Abstract: bipolar power transistor vce 600 volt ks53 KS534505
Text: POIiJEREX INC m Tfl n /m 1 E J ? 5 ^ 4 t 5 1 OOOEOEfl _ x Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412) 925-7272 t p 3 3-^ D KS534505 S in C flB B ip o ld l" Transistor Module 50 Amperes/600 Volts Description Powerex Single Bipolar Transistor
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KS534505
1S697
Amperes/600
KS534505
72CJL
BIPOLAR TRANSISTOR
bipolar power transistor vce 600 volt
ks53
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KC324515
Abstract: No abstract text available
Text: POWEREX INC 3^ E D 75^41,21 00D43ME 3 H P R X m um m x Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15 69 7 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 KC324515 Common Em itter Dual Darlington
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00D43ME
BP107,
KC324515
Amperes/600
Irr10
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Untitled
Abstract: No abstract text available
Text: POWEREX INC 3TE D • 7 5 ^ 2 1 m u m e x _ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 0DG4370 fl H P R X KE7235A1 Six-Darlington
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0DG4370
BP107,
KE7235A1
Amperes/500
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diode B15A
Abstract: 10A 600 VOLT DIODE bipolar power transistor vce 600 volt D 1437 transistor BIPOLAR TRANSISTOR KS53 1S697 KS534505 7214F 300 volt 16 ampere transistor
Text: PO ü l E R E X INC Tfl fOHBHBT DE J ? ä e1 4 t, 5 1 OOOaOEfl _ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 925-7272 T p D KS534505 Single Bipolar Transistor Module 50 Amperes/600 Volts Description Powerex Single Bipolar Transistor
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00DSDS8
KS534505
1S697
Amperes/600
KS534505
diode B15A
10A 600 VOLT DIODE
bipolar power transistor vce 600 volt
D 1437 transistor
BIPOLAR TRANSISTOR
KS53
1S697
7214F
300 volt 16 ampere transistor
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transistor z5
Abstract: EV150 m5 isolated dual transistor kd325515 KD325
Text: POÜIEREX INC 3TE D • TSTMbSl 00G45S2 4WEREX K D 3255Î5 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15 6 9 7 412 9 2 5 - 7 2 7 2 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14
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00G45S2
BP107,
Amperes/600
-150A
transistor z5
EV150
m5 isolated dual transistor
kd325515
KD325
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