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    DIODE GEN PURP 600V 1A SMB
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    SURHS8160T3G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SURHS8160T3G On Semiconductor SURHS8160 - DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, LEAD FREE, PLASTIC, CASE 403A-03, SMB, 2 PIN, Signal Diode Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: MURHS160T3G, SURHS8160T3G Power Rectifier Features and Benefits •       Ultrafast 35 Nanosecond Recovery Times 175C Operating Junction Temperature High Temperature Glass Passivated Junction High Voltage Capability to 600 V AEC−Q101 Qualified and PPAP Capable


    Original     		PDF MURHS160T3G, SURHS8160T3G MURHS160/D

    SURHS8160T3G

    Abstract: No abstract text available
    Text: MURHS160T3G, SURHS8160T3G Power Rectifier Features and Benefits •       Ultrafast 35 Nanosecond Recovery Times 175C Operating Junction Temperature High Temperature Glass Passivated Junction High Voltage Capability to 600 V AEC−Q101 Qualified and PPAP Capable


    Original     		PDF MURHS160T3G, SURHS8160T3G AEC-Q101 MURHS160/D