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    SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN Search Results

    SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    V75 marking

    Abstract: NE3503M04-A transistor marking v75 ghz LNB ku band HS350 NE3503M04 NE3503M04-T2-A m04 marking V75 4pin
    Text: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD


    Original     		PDF NE3503M04 NE3503M04-A NE3503M04-T2-A V75 marking NE3503M04-A transistor marking v75 ghz LNB ku band HS350 NE3503M04 NE3503M04-T2-A m04 marking V75 4pin

    V75 marking

    Abstract: No abstract text available
    Text: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD


    Original     		PDF NE3503M04 NE3503M04-A NE3503M04-T2-A IR260 HS350 V75 marking

    transistor marking v75 ghz

    Abstract: LNB ku band NE3503M04-T2B NE3503M04 NE3503M04-A HS350
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		PDF NE3503M04 NE3503M04 NE3503M04-T2 NE3503M04-T2B NE3503M04-A NE3503M04-T2-A NE3503M04-T2B-A PG10456EJ03V0DS transistor marking v75 ghz LNB ku band HS350

    transistor marking v75 ghz

    Abstract: nec microwave transistor v75 NE3503M04-A HS350 NE3503M04 NE3503M04-T2 NE3503M04-T2-A LNB ku band V75 marking
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		PDF NE3503M04 NE3503M04-A NE3503M04-T2 NE3503M04-T2-A NE3503M04-T2B NE3503M04-T2B-A transistor marking v75 ghz nec microwave transistor v75 NE3503M04-A HS350 NE3503M04 NE3503M04-T2 NE3503M04-T2-A LNB ku band V75 marking

    ne3514s02

    Abstract: NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3514S02 NE3514S02-T1C NE3514S02-T1C-A NE3514S02-T1D NE3514S02-T1D-A NE3514S0anty ne3514s02 NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier

    NE350184C

    Abstract: NE350184C-T1A-A rogers 5880 rt/duroid 5880 17802A GA-13 HS350 NE350184C-T1 NE350184C-T1A k-band amplifier
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE350184C K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic 84C package APPLICATIONS


    Original     		PDF NE350184C NE350184C-T1 NE350184C-T1-A NE350184C-T1A NE350184C-T1A-A NE350anty NE350184C NE350184C-T1A-A rogers 5880 rt/duroid 5880 17802A GA-13 HS350 NE350184C-T1 NE350184C-T1A k-band amplifier

    NE3514S02

    Abstract: NE3514 NE3514S02-A transistor "micro-x" "marking" 3 RT DUROID 5880 NE3514S02-T1D NE3514S02-T1C-A ir260 N-CHANNEL HJ-FET NE3514S02-T1D-A
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3514S02 NE3514S02-T1C NE3514S02-T1D NE3514S02-T1C-A NE3514S02-T1D-A NE3514S02-A 25Cted, PG10593EJ01V0DS NE3514S02 NE3514 NE3514S02-A transistor "micro-x" "marking" 3 RT DUROID 5880 ir260 N-CHANNEL HJ-FET

    transistor marking v75 ghz

    Abstract: NE3503M04 PG10456EJ01V1DS HS350 NE3503M04-T2 nec marking power amplifier nec microwave m04 marking NE3503
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		PDF NE3503M04 NE3503M04-T2 transistor marking v75 ghz NE3503M04 PG10456EJ01V1DS HS350 NE3503M04-T2 nec marking power amplifier nec microwave m04 marking NE3503

    microwave office

    Abstract: transistor marking v75 ghz nec microwave
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		PDF NE3503M04 NE3503M04 NE3503M04-T2 NE3503M04-A NE3503M04-T2-A NE3503M04-T2B-A microwave office transistor marking v75 ghz nec microwave

    transistor marking v75 ghz

    Abstract: transistor v75
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		PDF NE3503M04 NE3503M04 NE3503M04-T2 transistor marking v75 ghz transistor v75

    transistor marking v75 ghz

    Abstract: nec microwave Ku BAND SUPER LOW NOISE type c NE3503M04 NE3503M04-A NE3503M04-T2 HS350 NE3503M04-T2-A V75 4pin
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		PDF NE3503M04 NE3503M04-A NE3503M04-T2 NE3503M04-T2-A NE3503M04-T2B NE3503M04-T2B-A transistor marking v75 ghz nec microwave Ku BAND SUPER LOW NOISE type c NE3503M04 NE3503M04-A NE3503M04-T2 HS350 NE3503M04-T2-A V75 4pin

    ne3511s02 s2p

    Abstract: NE3511S02 NE3511S02-T1D rt/duroid 5880 HS350 NE3511S02-T1C NE3511S02-T1C-A lnb ku-band rogers 5880
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package


    Original     		PDF NE3511S02 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D NE3511S02-T1D-A ne3511s02 s2p NE3511S02 NE3511S02-T1D rt/duroid 5880 HS350 NE3511S02-T1C NE3511S02-T1C-A lnb ku-band rogers 5880

    ne3511s02 s2p

    Abstract: NE3511S02-A NE3511S02 HS350 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D lnb ku-band nec microwave NE35
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3511S02 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D NE3511S02-T1D-A ne3511s02 s2p NE3511S02-A NE3511S02 HS350 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D lnb ku-band nec microwave NE35

    ne3512s02 s2p

    Abstract: NE3512S02 NE3512 lnb ku-band NE3512S02-T1C-A NE3512S02-T1D NE3512S02-T1D-A HS350 NE3512S02-T1C NE3512S02-T1
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package


    Original     		PDF NE3512S02 NE3512S02-T1C NE3512S02-T1C-A NE3512S02-T1D NE3512S02-T1D-A ne3512s02 s2p NE3512S02 NE3512 lnb ku-band NE3512S02-T1C-A NE3512S02-T1D NE3512S02-T1D-A HS350 NE3512S02-T1C NE3512S02-T1

    NE350184C

    Abstract: NE350184C-T1A ne350184c-t1-a ne350184c-t1a-a NEC Ga FET marking L HS350 NE350184C-T1 k-band amplifier
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE350184C K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic 84C package APPLICATIONS


    Original     		PDF NE350184C NE350184C-T1 NE350184C-T1-A NE350184C-T1A NE350184C-T1A-A NE350184C NE350184C-T1A ne350184c-t1-a ne350184c-t1a-a NEC Ga FET marking L HS350 NE350184C-T1 k-band amplifier

    NE3512S02-T1D-A and s2p

    Abstract: rt/duroid 5880 NE3512 NE3512S02-T1C ne3512s02 s2p d marking Micro-X maximum gain s2p NE3512S02-T1C-A NE3512S02-T1D-A HS350
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3512S02 NE3512S02-T1C NE3512S02-T1C-A NE3512S02-T1D NE3512S02-T1D-A NE3512S02-T1D-A and s2p rt/duroid 5880 NE3512 NE3512S02-T1C ne3512s02 s2p d marking Micro-X maximum gain s2p NE3512S02-T1C-A NE3512S02-T1D-A HS350

    NE3514

    Abstract: NE3514S02 HS350 PG10593EJ01V0DS
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3514S02 NE3514S02-T1C NE3514S02-T1C-A NE3514S02-T1D NE3514S02-T1D-A NE3514 NE3514S02 HS350 PG10593EJ01V0DS

    EPB025A

    Abstract: Low Noise High Gain
    Text: EPB025A Low Noise High Gain Heterojunction Power FET FEATURES • • • • • 420 50 TYPICAL 0.8dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN,


    Original     		PDF EPB025A 12GHz EPB025A Low Noise High Gain

    NE3505M04

    Abstract: FL-240 NEC Ga FET marking L NE3505M04-T2 ne3505
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz Reference Only


    Original     		PDF NE3505M04 NE3505M04-T2 50pcs Rn/50 NE3505M04 FL-240 NEC Ga FET marking L NE3505M04-T2 ne3505

    NE3515S02

    Abstract: transistor "micro-x" "marking" 3 NE3515S02-T1C-A ne3515 NE3515S02-T1D-A duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA


    Original     		PDF NE3515S02 NE3515S02-T1C NE3515S02-T1D NE3515S02-T1C-A NE3515S02-T1D-A PG10708EJ01V0DS NE3515S02 transistor "micro-x" "marking" 3 ne3515 duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260

    NE3515S02

    Abstract: NE3515S02-T1C-A NE3515S02-T1D-A HS350 NE3515S02-T1C lnb ku-band GaAs S2p NE3515S02
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA


    Original     		PDF NE3515S02 NE3515S02-T1C NE3515S02-T1C-A NE3515S02-T1D NE3515S02-T1D-A NE3515S02 NE3515S02-T1C-A NE3515S02-T1D-A HS350 NE3515S02-T1C lnb ku-band GaAs S2p NE3515S02

    NE3515S02

    Abstract: NEC Ga FET marking L NE3515S02-T1C-A maximum gain s2p gaas fet micro-X NEC L lnb ku-band NE3515S02-T1C gaas fet micro-X Package marking GaAs S2p NE3515S02 NE3515S02-T1D-A
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA


    Original     		PDF NE3515S02 NE3515S02-T1C NE3515S02-T1C-A NE3515S02-T1D NE3515S02-T1D-A NE3515S02 NEC Ga FET marking L NE3515S02-T1C-A maximum gain s2p gaas fet micro-X NEC L lnb ku-band NE3515S02-T1C gaas fet micro-X Package marking GaAs S2p NE3515S02 NE3515S02-T1D-A

    FHX76LP

    Abstract: No abstract text available
    Text: FHX76LP Super Low Noise HEMT FEATURES • Low Noise Figure: NF=0.40dB Typ. @f=12GHz • High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz • High Reliability • Small Size SMT Package • Tape and Reel Packaging Available DESCRIPTION TM The FHX76LP is a low noise SuperHEMT product designed for DBS


    Original     		PDF FHX76LP 12GHz FHX76LP Tota4888

    FHX76LP

    Abstract: fujitsu hemt 3425 nf
    Text: FHX76LP Super Low Noise HEMT FEATURES • Low Noise Figure: NF=0.40dB Typ. @f=12GHz • High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz • High Reliability • Small Size SMT Package • Tape and Reel Packaging Available DESCRIPTION TM The FHX76LP is a low noise SuperHEMT product designed for DBS


    Original     		PDF FHX76LP 12GHz FHX76LP FCSI0598M200 fujitsu hemt 3425 nf