GD-32
Abstract: mgf4941al fet K 727
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz
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MGF4941AL
MGF4941AL
12GHz
GD-32
4000pcs
GD-32
fet K 727
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top 261
Abstract: GD-32 mgf4941al InGaAs HEMT mitsubishi
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz
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18/May/2007
MGF4941AL
MGF4941AL
12GHz
GD-32
4000pcs
top 261
GD-32
InGaAs HEMT mitsubishi
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NE425S01
Abstract: NE425S01-T1 NE425S01-T1B
Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz Noise Figure, NF dB
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NE425S01
NE425S01
NE425S01-T1
NE425S01-T1B
24-Hour
NE425S01-T1
NE425S01-T1B
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NE429M01
Abstract: NE429M01-T1
Text: PRELIMINARY DATA SHEET NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF = 0.9 dB TYP, GA = 10 dB TYP at f = 12 GHz • 6 PIN SUPER MINIMOLD PACKAGE
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NE429M01
NE429M01
NE429M01-T1
24-Hour
NE429M01-T1
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low noise hemt transistor
Abstract: InGaAs HEMT mitsubishi MGF4951A MGF4952A
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.
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MGF4951A/MGF4952A
MGF4951A/MGF4952A
12GHz
MGF4951A
MGF4952A
ORD148
50-ohm
low noise hemt transistor
InGaAs HEMT mitsubishi
MGF4951A
MGF4952A
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MGF4919G
Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically
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MGF491xG
MGF491
12GHz
MGF4916G
MGF4919G
MGF4916G
MGF4919G
gD 679 transistor
L to Ku band amplifiers
GS 1223
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gD 679 transistor
Abstract: MGF4316G MGF4319G InGaAs HEMT mitsubishi mgf431 MGF4319
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF431xG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT High Electron Mobility Transistor is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures
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MGF431xG
MGF431xG
12GHz
MGF4316G
MGF4319G
Par79
MGF4316G
gD 679 transistor
MGF4319G
InGaAs HEMT mitsubishi
mgf431
MGF4319
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MGF4961
Abstract: MGF4961B GS 1,2 12 MGF4961B data sheet InGaAs HEMT mitsubishi 4652 fet MGF496
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Feb./2007 MGF4961B SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4961B super-low noise HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. (unit: mm) 4.0±0.2 1.9±0.1 (1.05)
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MGF4961B
MGF4961B
20GHz
GD-31
MGF4961
GS 1,2 12
MGF4961B data sheet
InGaAs HEMT mitsubishi
4652 fet
MGF496
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GD-30
Abstract: InGaAs HEMT mitsubishi
Text: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.
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May/2008
MGF4934AM/BM
MGF4934BM
12GHz
GD-30
InGaAs HEMT mitsubishi
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V75 marking
Abstract: No abstract text available
Text: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
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NE3503M04
NE3503M04-A
NE3503M04-T2-A
IR260
HS350
V75 marking
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micro-x mhz ghz microwave
Abstract: Micro-X Marking 865
Text: CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT For professional super low-noise amplifiers For frequencies from 500 MHz to > 20 GHz Hermetically sealed microwave package
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CFY67
CFY67-08
CFY67-08P
CFY67-10
CFY67-10P
CFY67-nnl:
micro-x mhz ghz microwave
Micro-X Marking 865
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pt 7313
Abstract: NE425S01 NE425S01-T1 NE425S01-T1B
Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 VDS = 2 V ID = 10 mA • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz
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NE425S01
NE425S01
NE425S01-T1
NE425S01-T1B
24-Hour
pt 7313
NE425S01-T1
NE425S01-T1B
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ne3514s02
Abstract: NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS
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NE3514S02
NE3514S02-T1C
NE3514S02-T1C-A
NE3514S02-T1D
NE3514S02-T1D-A
NE3514S0anty
ne3514s02
NE3514
NE3514S02-T1C s2p
marking t1c
rogers 5880
HS350
k-band amplifier
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NE3514S02
Abstract: NE3514 NE3514S02-A transistor "micro-x" "marking" 3 RT DUROID 5880 NE3514S02-T1D NE3514S02-T1C-A ir260 N-CHANNEL HJ-FET NE3514S02-T1D-A
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS
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NE3514S02
NE3514S02-T1C
NE3514S02-T1D
NE3514S02-T1C-A
NE3514S02-T1D-A
NE3514S02-A
25Cted,
PG10593EJ01V0DS
NE3514S02
NE3514
NE3514S02-A
transistor "micro-x" "marking" 3
RT DUROID 5880
ir260
N-CHANNEL HJ-FET
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TRANSISTOR C 4460
Abstract: InGaAs HEMT mitsubishi MGF4953B MGF495
Text: Nｏｖ./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953B SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
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MGF4953B
MGF4953B
20GHz
3000pcs
TRANSISTOR C 4460
InGaAs HEMT mitsubishi
MGF495
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NE3517S03-A
Abstract: NE3517S03-T1C NE3517S03 HS350
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS
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NE3517S03
NE3517S03-T1C
NE3517S03-T1D
NE3517S03-T1C-A
NE3517S03-T1D-A
NE3517S03-A
PG10787EJ01V0DS
NE3517S03-A
NE3517S03
HS350
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ne3511s02 s2p
Abstract: NE3511S02-A NE3511S02 HS350 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D lnb ku-band nec microwave NE35
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS
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NE3511S02
NE3511S02-T1C
NE3511S02-T1C-A
NE3511S02-T1D
NE3511S02-T1D-A
ne3511s02 s2p
NE3511S02-A
NE3511S02
HS350
NE3511S02-T1C
NE3511S02-T1C-A
NE3511S02-T1D
lnb ku-band
nec microwave
NE35
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RT DUROID 5880
Abstract: NE3512 NE3512S02-T1D-A PG10592EJ01V0DS HS350
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS
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NE3512S02
NE3512S02-T1C
NE3512S02-T1D
NE3512S02-T1C-A
NE3512S02-T1D-A
NE3512S02-A
PG10592EJ01V0DS
RT DUROID 5880
NE3512
PG10592EJ01V0DS
HS350
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NE3517S03
Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS
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NE3517S03
NE3517S03-T1C
NE3517S03-T1C-A
NE3517S03-T1D
NE3517S03-T1D-A
NE3517S03
rt/duroid 5880
RT DUROID 5880
NE3517S03-A
marking t1c
rogers 5880
HS350
NE3517S03-T1D-A
NE3517S03-T1C
rt duroid
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MGF4918D
Abstract: MGF4910D MGF4916D MGF4917D mgf4914 mitsubishi mgf mitsubishi mgf-4918d
Text: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to l< band amplifiers. The hermetically sealed metal-ceramic
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MGF4910D
12GHz
F4914D:
F4916D:
F4917D:
F4918D:
12GHz
MGF4914D
MGF4918D
MGF4916D
MGF4917D
mgf4914
mitsubishi mgf
mitsubishi mgf-4918d
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mgf4953a
Abstract: MGF4954A
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MG F4953A/MG F4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.
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F4953A/MG
F4954A
MGF4953A/MGF4954A
12GHz
MGF4953A
MGF4954A
MGF4953A
June/2000
MGF4954A
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MGF4317D
Abstract: MGF-4317D MGF4310 MGF4316D MGF4318D 4310D
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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F4310D
MGF4310D
12GHz
GF4314D:
GF4316D:
F4317D:
GF4318D:
12GHz
4310D
MGF4317D
MGF-4317D
MGF4310
MGF4316D
MGF4318D
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MGF4919
Abstract: MGF4919G
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG OUTLINE DRAWING series super-low-noise HEMT(High U n it:m illim e te rs Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The
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OCR Scan
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MGF491xG
MGF491xG
MGF491
12GHz
MGF4916G
MGF4919G
MGF4916G
MGF4919G
MGF4919
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HEMT marking P
Abstract: No abstract text available
Text: S IE M E N S CFY66 H/Re/K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AIGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers •
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CFY66
CFY67)
CFY66-08
CFY66-08P
CFY66-10
CFY66-10P
CFY66-nnl
QS9000
HEMT marking P
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