Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SUM110P08-11L REV Search Results

    SUM110P08-11L REV Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    LM4546BVHX/NOPB Texas Instruments AC ''97 Rev 2.1 Codec with Sample Rate Conversion and National 3D Sound 48-LQFP -40 to 85 Visit Texas Instruments Buy

    SUM110P08-11L REV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUM110P08-11L www.vishay.com Vishay Siliconix P-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUM110P08-11L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sum110p08

    Abstract: No abstract text available
    Text: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S


    Original     		PDF SUM110P08-11L O-263 SUM110P08-11L-E3 18-Jul-08 sum110p08

    SUM110P08-11L

    Abstract: 74173
    Text: SPICE Device Model SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUM110P08-11L 18-Jul-08 SUM110P08-11L 74173

    SUM110P08-11L

    Abstract: SUM110P08 SUM110P08-11L-E3 SUM110P0811L SUM110P08-11L rev
    Text: SUM110P08-11L New Product Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –80 80 ID (A)b rDS(on) (W) 0.0112 @ VGS = –10 V –110 0.0145 @ VGS = –4.5 V –109 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS 85 nC RoHS D Automotive such as:


    Original     		PDF SUM110P08-11L O-263 SUM110P08-11L 08-Apr-05 SUM110P08 SUM110P08-11L-E3 SUM110P0811L SUM110P08-11L rev

    Untitled

    Abstract: No abstract text available
    Text: SUM110P08-11L New Product Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –80 80 ID (A)b rDS(on) (W) 0.0112 @ VGS = –10 V –110 0.0145 @ VGS = –4.5 V –109 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS 85 nC RoHS D Automotive such as:


    Original     		PDF SUM110P08-11L O-263 SUM110P08-11Lâ 08-Apr-05

    SUM110P08-11L

    Abstract: SUM110P08-11L-E3 SUM110P0811L SUM110P08
    Text: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S


    Original     		PDF SUM110P08-11L O-263 SUM110P08-11L-E3 18-Jul-08 SUM110P08-11L SUM110P08-11L-E3 SUM110P0811L SUM110P08

    72194

    Abstract: No abstract text available
    Text: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S


    Original     		PDF SUM110P08-11L O-263 SUM110P08-11L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 72194

    SUM110P08-11L-E3

    Abstract: SUM110P08-11L SUM110P08-11 SUM110P08_11L SUM110P08-11L rev
    Text: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S


    Original     		PDF SUM110P08-11L O-263 SUM110P08-11L-E3 08-Apr-05 SUM110P08-11L-E3 SUM110P08-11L SUM110P08-11 SUM110P08_11L SUM110P08-11L rev

    Untitled

    Abstract: No abstract text available
    Text: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see


    Original     		PDF SUM110P08-11L O-263 SUM110P08-11L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUM110P08-11L rev

    Abstract: No abstract text available
    Text: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see


    Original     		PDF SUM110P08-11L O-263 SUM110P08-11L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SUM110P08-11L rev