Untitled
Abstract: No abstract text available
Text: SUM100N12–14L New Product Vishay Siliconix N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0144 @ VGS = 10 V 100 0.0154 @ VGS = 4.5 V 96 VDS (V) 125 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 67 nC COMPLIANT
|
Original
|
SUM100N12â
O-263
08-Apr-05
|
PDF
|
sum100n12
Abstract: No abstract text available
Text: SUM100N12-14L Vishay Siliconix New Product N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0144 @ VGS = 10 V 100 0.0154 @ VGS = 4.5 V 96 VDS (V) 125 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 67 nC COMPLIANT
|
Original
|
SUM100N12-14L
O-263
SUM100N12-14L--E3
S-51010--Rev.
23-May-05
sum100n12
|
PDF
|
73400
Abstract: No abstract text available
Text: SUM100N12–14L New Product Vishay Siliconix N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0144 @ VGS = 10 V 100 0.0154 @ VGS = 4.5 V 96 VDS (V) 125 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 67 nC COMPLIANT
|
Original
|
SUM100N12
O-263
83ang
52229--Rev.
24-Oct-05
73400
|
PDF
|
SUM100N12-14L
Abstract: No abstract text available
Text: SPICE Device Model SUM100N12-14L Vishay Siliconix N-Channel 125-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
SUM100N12-14L
18-Jul-08
SUM100N12-14L
|
PDF
|
DSA00384671
Abstract: No abstract text available
Text: SUM100N12–14L New Product Vishay Siliconix N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0144 @ VGS = 10 V 100 0.0154 @ VGS = 4.5 V 96 VDS (V) 125 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 67 nC COMPLIANT
|
Original
|
SUM100N12
O-263
83alectual
18-Jul-08
DSA00384671
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUM100N12–14L New Product Vishay Siliconix N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0144 @ VGS = 10 V 100 0.0154 @ VGS = 4.5 V 96 VDS (V) 125 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 67 nC COMPLIANT
|
Original
|
SUM100N12
O-263
08-Apr-05
|
PDF
|
sum45n25
Abstract: PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08
Text: For Automotive Applications w w w. v i s h a y. c o m SELECTOR GuIdE Power MoSFeTs P O w E R M O S F E Ts V I S H AY I N T E R T E C H N O L O G Y, I N C . SeMICoNDUCTorS reCTIFIerS Schottky single, dual Standard, Fast, and ultra-Fast Recovery (single, dual)
|
Original
|
VMN-SG2117-0705
sum45n25
PPAP
PPAP for thermistor
0034D
sud*45N05-20L
SQ7414EN
ceramic disc aec capacitors
siliconix an80
SUP57N20-33
SUP75N06-08
|
PDF
|
q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
|
Original
|
SiP41109
SiP41110
SiP41111
75/2A
q406 transistor
SI9120
equivalent Q406
q406
SUM65N20-30
Si3456BDV SPICE Device Model
sud*50n025
Si4304DY
0038 tsop
Si2325DS
|
PDF
|