Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SUBCKT INCLUDE Search Results

    SUBCKT INCLUDE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R5F521A6BDFN#V0 Renesas Electronics Corporation Microcontroller with 24-bit ΔΣ A/D Converter for Measuring Instruments, Including Smart Meters Visit Renesas Electronics Corporation
    R5F521A6BDFM#30 Renesas Electronics Corporation Microcontroller with 24-bit ΔΣ A/D Converter for Measuring Instruments, Including Smart Meters Visit Renesas Electronics Corporation
    R5F521A7BGFP#30 Renesas Electronics Corporation Microcontroller with 24-bit ΔΣ A/D Converter for Measuring Instruments, Including Smart Meters Visit Renesas Electronics Corporation
    R5F521A6BDLJ#U0 Renesas Electronics Corporation Microcontroller with 24-bit ΔΣ A/D Converter for Measuring Instruments, Including Smart Meters Visit Renesas Electronics Corporation
    R5F521A6BDFM#V0 Renesas Electronics Corporation Microcontroller with 24-bit ΔΣ A/D Converter for Measuring Instruments, Including Smart Meters Visit Renesas Electronics Corporation

    SUBCKT INCLUDE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RJU002N06

    Abstract: 6913
    Text: SPICE PARAMETER RJU002N06 by ROHM TR Div. * RJU002N06 NMOSFET model * Date: 2006/09/07 * This model includes a diode between source and drain. *D G S .SUBCKT RJU002N06 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RJU002N06 RJU002N06 0000E-6 2045E-6 0000E6 00E-12 9717E-12 038E-12 6913

    RTQ020N03

    Abstract: No abstract text available
    Text: SPICE PARAMETER RTQ020N03 by ROHM TR Div. * RTQ020N03 NMOSFET model * Date: 2006/09/20 * This model includes a diode between source and drain. *D G S .SUBCKT RTQ020N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RTQ020N03 RTQ020N03 0000E-6 059E-6 000E-3 187E-3 0000E6 43E-12

    RSQ025P03

    Abstract: No abstract text available
    Text: SPICE PARAMETER RSQ025P03 by ROHM TR Div. * RSQ025P03 PMOSFET model * Date: 2006/09/11 * This model includes a diode between drain and source. *D G S .SUBCKT RSQ025P03 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RSQ025P03 RSQ025P03 0000E-6 037E-6 000E-3 063E-3 0000E6 00E-12

    RSQ035P03

    Abstract: RSQ035P03 TR
    Text: SPICE PARAMETER RSQ035P03 by ROHM TR Div. * RSQ035P03 PMOSFET model * Date: 2006/09/11 * This model includes a diode between drain and source. *D G S .SUBCKT RSQ035P03 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RSQ035P03 RSQ035P03 0000E-6 327E-6 000E-3 101E-3 0000E6 00E-12 RSQ035P03 TR

    RSQ045N03

    Abstract: 1352 30217
    Text: SPICE PARAMETER RSQ045N03 by ROHM TR Div. * RSQ045N03 NMOSFET model * Date: 2006/09/27 * This model includes a diode between source and drain. *D G S .SUBCKT RSQ045N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RSQ045N03 RSQ045N03 0000E-6 728E-6 000E-3 907E-3 0000E6 00E-12 1352 30217

    RTR040N03

    Abstract: MJ61
    Text: SPICE PARAMETER RTR040N03 by ROHM TR Div. * RTR040N03 NMOSFET model * Date: 2006/09/27 * This model includes a diode between source and drain. *D G S .SUBCKT RTR040N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RTR040N03 RTR040N03 0000E-6 379E-6 000E-3 916E-3 0000E6 00E-12 MJ61

    DIODE 433

    Abstract: RTQ035P02 9508
    Text: SPICE PARAMETER RTQ035P02 by ROHM TR Div. * RTQ035P02 PMOSFET model * Date: 2006/09/15 * This model includes a diode between drain and source. *D G S .SUBCKT RTQ035P02 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RTQ035P02 RTQ035P02 0000E-6 719E-6 000E-3 035E-3 0000E6 00E-12 DIODE 433 9508

    RSF014N03

    Abstract: No abstract text available
    Text: SPICE PARAMETER RSF014N03 by ROHM TR Div. * RSF014N03 NMOSFET model * Date: 2006/09/15 * This model includes a diode between source and drain. *D G S .SUBCKT RSF014N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RSF014N03 RSF014N03 0000E-6 6741E-6 000E-3 0000E6 52E-12 872E-12

    RHU003N03

    Abstract: No abstract text available
    Text: SPICE PARAMETER RHU003N03 by ROHM TR Div. * RHU003N03 NMOSFET model * Date: 2006/09/07 * This model includes a diode between source and drain. *D G S .SUBCKT RHU003N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RHU003N03 RHU003N03 0000E-6 5432E-6 0000E6 926E-12 9976E-12 171E-12

    MJ340

    Abstract: RSS040P03 RS631 452 diode
    Text: SPICE PARAMETER RSS040P03 by ROHM TR Div. * RSS040P03 PMOSFET model * Date: 2006/10/04 * This model includes a diode between drain and source. *D G S .SUBCKT RSS040P03 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RSS040P03 RSS040P03 0000E-6 176E-6 000E-3 886E-3 0000E6 00E-12 MJ340 RS631 452 diode

    RSS090P03

    Abstract: No abstract text available
    Text: SPICE PARAMETER RSS090P03 by ROHM TR Div. * RSS090P03 PMOSFET model * Date: 2006/10/04 * This model includes a diode between drain and source. *D G S .SUBCKT RSS090P03 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RSS090P03 RSS090P03 0000E-6 02E-6 0000E-3 60E-6 0000E6 7000E-9

    MJ124

    Abstract: RSF010P03
    Text: SPICE PARAMETER RSF010P03 by ROHM TR Div. * RSF010P03 PMOSFET model * Date: 2006/09/20 * This model includes a diode between drain and source. *D G S .SUBCKT RSF010P03 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RSF010P03 RSF010P03 0000E-6 8455E-6 000E-3 0000E6 00E-12 882E-12 MJ124

    RTF020P02

    Abstract: Rd355
    Text: SPICE PARAMETER RTF020P02 by ROHM TR Div. * RTF020P02 PMOSFET model * Date: 2006/09/19 * This model includes a diode between drain and source. *D G S .SUBCKT RTF020P02 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RTF020P02 RTF020P02 0000E-6 079E-6 0000E-3 557E-3 0000E6 00E-12 Rd355

    RHU002N06

    Abstract: DIODE m1 TR 610 S
    Text: SPICE PARAMETER RHU002N06 by ROHM TR Div. * RHU002N06 NMOSFET model * Date: 2006/09/06 * This model includes a diode between source and drain. *D G S .SUBCKT RHU002N06 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RHU002N06 RHU002N06 0000E-6 32E-9 879E-3 0000E6 34E-12 027E-12 DIODE m1 TR 610 S

    RSS065N03

    Abstract: rss065
    Text: SPICE PARAMETER RSS065N03 by ROHM TR Div. * RSS065N03 NMOSFET model * Date: 2006/10/13 * This model includes a diode between source and drain. *D G S .SUBCKT RSS065N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RSS065N03 RSS065N03 0000E-6 424E-6 000E-3 4483E-3 0000E6 78E-12 rss065

    RTQ025P02

    Abstract: 25402E
    Text: SPICE PARAMETER RTQ025P02 by ROHM TR Div. * RTQ025P02 PMOSFET model * Date: 2006/09/22 * This model includes a diode between drain and source. *D G S .SUBCKT RTQ025P02 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RTQ025P02 RTQ025P02 0000E-6 582E-6 000E-3 756E-3 0000E6 00E-12 25402E

    IS553

    Abstract: RJP020N06
    Text: SPICE PARAMETER RJP020N06 by ROHM TR Div. * RJP020N06 NMOSFET model * Date: 2006/09/27 * This model includes a diode between source and drain. *D G S .SUBCKT RJP020N06 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RJP020N06 RJP020N06 0000E-6 171E-6 000E-3 0000E6 78E-12 548E-12 IS553

    RTQ045N03

    Abstract: MJ107
    Text: SPICE PARAMETER RTQ045N03 by ROHM TR Div. * RTQ045N03 NMOSFET model * Date: 2006/09/20 * This model includes a diode between source and drain. *D G S .SUBCKT RTQ045N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RTQ045N03 RTQ045N03 0000E-6 703E-6 000E-3 021E-3 0000E6 00E-12 MJ107

    RTR020N05

    Abstract: No abstract text available
    Text: SPICE PARAMETER RTR020N05 by ROHM TR Div. * RTR020N05 NMOSFET model * Date: 2006/09/27 * This model includes a diode between source and drain. *D G S .SUBCKT RTR020N05 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RTR020N05 RTR020N05 0000E-6 786E-6 000E-3 255E-3 0000E6 28E-12

    DIODE m1

    Abstract: nmosfet RJU003N03 97157 2451 nmos transistor m112 16300E
    Text: SPICE PARAMETER RJU003N03 by ROHM TR Div. * RJU003N03 NMOSFET model * Date: 2006/09/07 * This model includes a diode between source and drain. *D G S .SUBCKT RJU003N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RJU003N03 RJU003N03 0000E-6 2544E-6 000E-3 0000E6 00E-12 749E-12 DIODE m1 nmosfet 97157 2451 nmos transistor m112 16300E

    8726

    Abstract: RSL020P03 RD509
    Text: SPICE PARAMETER RSL020P03 by ROHM TR Div. * RSL020P03 PMOSFET model * Date: 2006/09/20 * This model includes a diode between drain and source. *D G S .SUBCKT RSL020P03 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RSL020P03 RSL020P03 0000E-6 814E-6 000E-3 911E-3 0000E6 00E-12 8726 RD509

    2996

    Abstract: RSQ035N03
    Text: SPICE PARAMETER RSQ035N03 by ROHM TR Div. * RSQ035N03 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT RSQ035N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RSQ035N03 RSQ035N03 0000E-6 952E-6 000E-3 621E-3 0000E6 70E-12 2996

    RJK005N03

    Abstract: IS433
    Text: SPICE PARAMETER RJK005N03 by ROHM TR Div. * RJK005N03 NMOSFET model * Date: 2006/09/08 * This model includes a diode between source and drain. *D G S .SUBCKT RJK005N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RJK005N03 RJK005N03 0000E-6 7040E-6 000E-3 0000E6 72E-12 868E-12 IS433

    RSR025N03

    Abstract: No abstract text available
    Text: SPICE PARAMETER RSR025N03 by ROHM TR Div. * RSR025N03 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT RSR025N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RSR025N03 RSR025N03 0000E-6 722E-6 000E-3 478E-3 0000E6 34E-12