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    RSR025N03 Price and Stock

    ROHM Semiconductor RSR025N03HZGTL

    MOSFET N-CH 30V 2.5A TSMT3
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    DigiKey RSR025N03HZGTL Cut Tape 2,515 1
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    RSR025N03HZGTL Digi-Reel 1
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    RSR025N03HZGTL Reel 3,000
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    Avnet Americas RSR025N03HZGTL Reel 16 Weeks 3,000
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    Mouser Electronics RSR025N03HZGTL 10,117
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    Verical RSR025N03HZGTL 2,920 59
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    RSR025N03HZGTL 2,000 329
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    Newark RSR025N03HZGTL Cut Tape 2,809 1
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    Quest Components RSR025N03HZGTL 1,600
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    TME RSR025N03HZGTL 1
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    Avnet Asia RSR025N03HZGTL 24 Weeks 3,000
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    Chip1Stop RSR025N03HZGTL Cut Tape 2,920
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    CoreStaff Co Ltd RSR025N03HZGTL 2,000
    • 1 $0.421
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    ROHM Semiconductor RSR025N03TL

    MOSFET N-CH 30V 2.5A TSMT3
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    DigiKey RSR025N03TL Cut Tape 1,106 1
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    RSR025N03TL Digi-Reel 1
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    RSR025N03TL Reel 3,000
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    Verical RSR025N03TL 48,000 3,000
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    Newark RSR025N03TL Cut Tape 872 1
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    Bristol Electronics RSR025N03TL 3,000
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    Quest Components RSR025N03TL 2,400
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    RSR025N03TL 1,556
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    Chip 1 Exchange RSR025N03TL 2,889
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    Avnet Asia RSR025N03TL 24 Weeks 3,000
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    New Advantage Corporation RSR025N03TL 57,000 1
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    ROHM Semiconductor RSR025N03FRATL

    Mosfet, Aec-Q101, N-Ch, 30V, 2.5A, Tsmt3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.05Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes |Rohm RSR025N03FRATL
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    Newark RSR025N03FRATL Cut Tape 5,477 1
    • 1 $0.623
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    • 100 $0.343
    • 1000 $0.229
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    TME RSR025N03FRATL 3
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    • 10000 $0.137
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    Avnet Silica RSR025N03FRATL 23 Weeks 3,000
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    ROHM Semiconductor RSR025N03MGTL

    Transistor MOSFET N-CH 30V 2.5A 3-Pin SC-96 Emboss T/R (Alt: RSR025N03MGTL)
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    RSR025N03 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RSR025N03 ROHM FET Transistor, Silicon N-Channel Switching, 30V, 2.5A Original PDF
    RSR025N03 ROHM Switching (30V, 2.5A) Original PDF
    RSR025N03TL ROHM TRANS MOSFET N-CH 30V 2.5A 3TSMT3 T/R Original PDF
    RSR025N03TR ROHM TRANS MOSFET N-CH 30V 2.5A 3TSMT3 T/R Original PDF

    RSR025N03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RSR025N03

    Abstract: No abstract text available
    Text: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 zExternal dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .


    Original     		PDF RSR025N03 RSR025N03

    RSR025N03

    Abstract: RG-107
    Text: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 zExternal dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .


    Original     		PDF RSR025N03 RSR025N03 RG-107

    Untitled

    Abstract: No abstract text available
    Text: RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) .


    Original     		PDF RSR025N03 RSR025N03

    Untitled

    Abstract: No abstract text available
    Text: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 !External dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 !Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .


    Original     		PDF RSR025N03

    diode

    Abstract: RSR025N03 means 125 diode Z diode RSR025N03 RG107
    Text: RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) .


    Original     		PDF RSR025N03 diode RSR025N03 means 125 diode Z diode RSR025N03 RG107

    Untitled

    Abstract: No abstract text available
    Text: RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions Unit : mm Structure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) .


    Original     		PDF RSR025N03

    RSR025N03

    Abstract: No abstract text available
    Text: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 zExternal dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .


    Original     		PDF RSR025N03 RSR025N03

    Untitled

    Abstract: No abstract text available
    Text: RSR025N03FRA RSR025N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RSR025N03FRA RSR025N03 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 (2) (1) 0.95 0.95 0.16 1.9 (1) Gate (2) Source


    Original     		PDF RSR025N03FRA RSR025N03 AEC-Q101

    RSR025N03

    Abstract: No abstract text available
    Text: SPICE PARAMETER RSR025N03 by ROHM TR Div. * RSR025N03 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT RSR025N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RSR025N03 RSR025N03 0000E-6 722E-6 000E-3 478E-3 0000E6 34E-12

    RSD130P10

    Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
    Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents


    Original     		PDF RUM002N02 RZM002P02 RUE002N02 RZE002P02 RUM002N05 RUE002N05 RZF013P01 RZL025P01 RZR020P01 RW1A013ZP RSD130P10 rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    RSD130P10

    Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
    Text: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.


    Original     		PDF 5V/60V R0039A 52P6214E RSD130P10 RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200

    2sk3808

    Abstract: 2SK3807 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSQ035P03 RTQ035P02 FET SP8M4 sp8m5
    Text: Transistors MOS FET 1. Can be used with automatic placement machines. Available in a wide variety of packages. Like bipolar transistors, taped MOS FETs are available for assembly lines using automatic placement equipment. 2. MOS FETs operating from 4 volts and 2.5 volts


    Original     		PDF RSS140N03 O-220FN 2SK2095N 2SK2713 2SK2299N 2SK2793 2SK2792 2SK2740 /products/shortform/21trstr/trstr1 2sk3808 2SK3807 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSQ035P03 RTQ035P02 FET SP8M4 sp8m5

    sp8k10s

    Abstract: SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX
    Text: 2009 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.


    Original     		PDF R0039A 51P6023E sp8k10s SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6102FV-C General Description Key Specifications The BM6102FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 200ns, and minimum input


    Original     		PDF 2500Vrms BM6102FV-C BM6102FV-C 2500Vrms, 200ns, 100ns,

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    2SA2018

    Abstract: EMT18 IMT18 RSR025N03 T110 UMT18N
    Text: EMT18 / UMT18N / IMT18 Transistors General purpose transistors dual transistors EMT18 / UMT18N / IMT18 0.22 EMT18 (3) (4) (5) (2) 1.2 1.6 (1) 0.5 0.13 (6) 0.5 0.5 1.0 1.6 zExternal dimensions (Unit : mm) zFeatures 1) Two 2SA2018 chips in a EMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3


    Original     		PDF EMT18 UMT18N IMT18 EMT18 2SA2018 UMT18N IMT18 RSR025N03 T110

    2SA21

    Abstract: 2SA2018 2SA2030 2SA2119K RSR025N03 SC-75A T146
    Text: 2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. 0.8 1.6 0.2 0.3 zFeatures 1 A collector current is large.


    Original     		PDF 2SA2018 2SA2030 2SA2119K 500mA 250mA 200mA 2SA2018 2SA21 2SA2119K RSR025N03 SC-75A T146

    RQW130N03

    Abstract: rqw200n03 sp8k10s mosfet rqw 130 SP8K10 RQA200N03 mosfet rqa 130 RQW130 RQA130N03 RQW 130
    Text: Product Catalog MOSFETs Discrete Semiconductors 2007-Dec. www.rohm.com ROHM MOSFETs In the society these days, MOSFET is getting rapidly popular as a key-device in many applications, such as mobile phones and automotive electronics. ROHM will keep developing new devices exactly following the


    Original     		PDF 2007-Dec. 50P5842E RQW130N03 rqw200n03 sp8k10s mosfet rqw 130 SP8K10 RQA200N03 mosfet rqa 130 RQW130 RQA130N03 RQW 130

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6104FV-C General Description Key Specifications     The BM6104FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 150ns, and minimum input


    Original     		PDF 2500Vrms BM6104FV-C BM6104FV-C 2500Vrms, 150ns, 150ns SSOP-B20W

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6102FV-C General Description Key Specifications The BM6102FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 200ns, and minimum input


    Original     		PDF 2500Vrms BM6102FV-C BM6102FV-C 2500Vrms, 200ns, 100ns,