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    HS9-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation
    HS1-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation

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    Untitled

    Abstract: No abstract text available
    Text: SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF SUP85N10-10, SUB85N10-10 2002/95/EC O-220AB O-263 SUP85N10-10 SUP85N10-10-E3

    Untitled

    Abstract: No abstract text available
    Text: SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF SUP85N10-10, SUB85N10-10 2002/95/EC O-220AB O-263 SUP85N10-10 SUP85N10-10-E3

    Untitled

    Abstract: No abstract text available
    Text: SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF SUP85N10-10, SUB85N10-10 2002/95/EC O-220AB O-263 SUP85N10-10 O-220AB O-263 SUP85N10-10-E3

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP85N10-10, SUB85N10-10 www.vishay.com Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    PDF SUP85N10-10, SUB85N10-10 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12