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    Vishay BLH SUB75N06-08-E3

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    Bristol Electronics SUB75N06-08-E3 105 2
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    Vishay Siliconix SUB75N06-08

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    Vishay Intertechnologies SUB75N06-08-E3

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    Vishay Siliconix SUB75N06-08-E3

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    SUB75N06 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SUB75N06-07L Vishay Intertechnology N-Channel 60-V (D-S) 175°C MOSFET Original PDF
    SUB75N06-07L-E3 Vishay Transistor Mosfet N-CH 60V 75A 3TO-263 Original PDF
    SUB75N06-07L SPICE Device Model Vishay N-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SUB75N06-08 Temic Semiconductors N-Channel Enhancement-Mode Transistors Original PDF
    SUB75N06-08 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SUB75N06-08 Vishay Intertechnology N-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SUB75N06-08-E3 Vishay Transistor Mosfet N-CH 60V 75A 3TO-263 Original PDF
    SUB75N06-08 SPICE Device Model Vishay N-Channel 60-V (D-S) 175°C MOSFET Original PDF
    SUB75N06-12L Vishay Intertechnology N-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SUB75N06-12L-E3 Vishay Transistor Mosfet N-CH 60V 75A 3TO-263 Original PDF
    SUB75N06-12L SPICE Device Model Vishay N-Channel Enhancement-Mode Transistor, Logic Level Original PDF

    SUB75N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 4800

    Abstract: SUB75N06-08
    Text: SPICE Device Model SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N06-08 S-71502Rev. 06-Aug-07 mosfet 4800 SUB75N06-08

    SUB75N06-07L

    Abstract: SUB75N06-07L-E3 SUP75N06-07L SUP75N06-07L-E3
    Text: SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 75 0.0085 at VGS = 4.5 V • 175 °C Rated Maximum Junction Temperature Available RoHS* a COMPLIANT TO-220AB


    Original     		PDF SUP/SUB75N06-07L O-220AB O-263 SUB75N06-07L SUP75N06-07L O-263) SUB75N06-07L-E3 O-263, SUB75N06-07L SUB75N06-07L-E3 SUP75N06-07L SUP75N06-07L-E3

    SUB75N06-06

    Abstract: SUP75N06-06
    Text: SUP/SUB75N06-06 New Product Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 60 "75 a 0.008 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-06 Top View


    Original     		PDF SUP/SUB75N06-06 O-220AB O-263 SUB75N06-06 SUP75N06-06 18-Jul-08 SUB75N06-06 SUP75N06-06

    SUB75N06-07L

    Abstract: 771a
    Text: SPICE Device Model SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N06-07L S-71501Rev. 06-Aug-07 SUB75N06-07L 771a

    SUB75N06-07L

    Abstract: SUP75N06-07L
    Text: SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 75a 60 0.0085 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-07L Top View N-Channel MOSFET


    Original     		PDF SUP/SUB75N06-07L O-220AB O-263 SUB75N06-07L SUP75N06-07L O-263 S-05111--Rev. 10-Dec-00 SUB75N06-07L SUP75N06-07L

    SUB75N06-08

    Abstract: SUP75N06-08
    Text: SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View SUP75N06-08 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-220AB O-263) O-263 S-47969--Rev. 08-Jul-96 SUB75N06-08 SUP75N06-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N06-12L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N06-12L 18-Jul-08

    sup75n06-08 datasheet

    Abstract: SUB75N06-08 SUP75N06-08
    Text: SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-220AB O-263) 18-Jul-08 sup75n06-08 datasheet SUB75N06-08 SUP75N06-08

    SUP/SUB75N06-07L

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N06-07L 18-Jul-08 SUP/SUB75N06-07L

    SUB75N06-08

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N06-08 18-Jul-08 SUB75N06-08

    SUB75N06-08

    Abstract: SUP75N06-08
    Text: SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-220AB O-263) S-05111--Rev. 10-Dec-01 SUB75N06-08 SUP75N06-08

    SUB75N06-07L

    Abstract: SUP75N06-07L 70776
    Text: SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 75a 60 0.0085 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-07L Top View N-Channel MOSFET


    Original     		PDF SUP/SUB75N06-07L O-220AB O-263 SUB75N06-07L SUP75N06-07L O-263 08-Apr-05 SUB75N06-07L SUP75N06-07L 70776

    SUP75N06-08

    Abstract: SUB75N06-08
    Text: SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View SUP75N06-08 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-220AB O-263) O-263 S-47969--Rev. 08-Jul-96 SUP75N06-08 SUB75N06-08

    SUB75N06-12L

    Abstract: SUP75N06-12L
    Text: SUP/SUB75N06-12L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 75 0.014 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-12L Top View N-Channel MOSFET


    Original     		PDF SUP/SUB75N06-12L O-220AB O-263 SUB75N06-12L SUP75N06-12L S-59182--Rev. 07-Sep-98 SUB75N06-12L SUP75N06-12L

    SUB75N06-08

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N06-08 0-to10V 15-Apr-02 SUB75N06-08

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N06-12L Siliconix N-Channel 60-V D-S , 175_C MOSFET New Product PRODUCT SUMMARY V(BR)DSS (V) 60 RDS(ON) (W) ID (A) 0.012 @ VGS = 10 V 75 0.014 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-12L Top View


    Original     		PDF SUP/SUB75N06-12L O-220AB O-263 SUP75N06-12L SUB75N06-12L O-263) O-263 S-59182--Rev. 07-Sep-98

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N06-06 New Product Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 60 "75 a 0.008 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-06 Top View


    Original     		PDF SUP/SUB75N06-06 O-220AB O-263 SUP75N06-06 SUB75N06-06 O-220AB O-263) O-263 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N06Ć08 Siliconix NĆChannel EnhancementĆMode Transistors 175_C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S S SUB75N06Ć08 Top View SUP75N06Ć08


    Original     		PDF SUP/SUB75N0608 O220AB SUB75N0608 SUP75N0608 O220AB S-44639--Rev.

    a2826

    Abstract: No abstract text available
    Text: Tem ic SUP/SUB75NÖ6-08 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary TO-220AB o TO-263 It h ;O D R A IN connected to TAB ~TT G D S Top View G D S SUB75N06-08 Top View SUP75N06-08 N-Channel M OSFET Absolute Maximum Ratings Tc = 25 °C Unless Otherwise Noted


    OCR Scan     		PDF SUP/SUB75N O-220AB O-263 SUB75N06-08 SUP75N06-08 -220AB O-263) S-44639-- SUP/SUB75N06-08 a2826

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N06-07L S ilic o n ix N-Channel Enhancement-Mode Transistors Product Summary I d A rDS(on) (ß ) 0.0075 @ VGS = 10 V V(BR)DSS 60 75a 0.0085 @ VGS = 4.5 V D Q TO-220AB o TO-263 t 1 0— DRAIN connected to TAB l! TPT Top View SUB75N06-07L GD S Top View


    OCR Scan     		PDF SUP/SUB75N06-07L O-220AB SUP75N06-07L O-263 SUB75N06-07L T0-220AB O-263) O-263 S-56920--Rev. 23-Mar-98

    7553a

    Abstract: No abstract text available
    Text: SUP/SUB75N06-12L VISHAY Siliconix T N-Channel 60-V D-S , 175°C MOSFET New Product PRODUCT SUMMARY r DS(ON) V (BR)DSS (V) •d (A) (-2) 0.012 @ VGS = 10 V 75 0.014 @ V GS= 4.5 V 70 60 D O TO-220AB o TO-263 < DRAIN connected to TAB 1 IPT G D S Top View Ô


    OCR Scan     		PDF SUP/SUB75N06-12L O-220AB O-263 SUP75N06-12L SUB75N06-12L S-59182-- 07-Sep-98 7553a

    GS 069 LF

    Abstract: SUB75N06-06
    Text: SUP/SUB75N06-06 VISHAY Vishay Siliconix New Product N-Channel 60-V D-S , 175°C MOSFET PRODUCT SUMMARY V(BR)DSS (V ) r DS(on) ( ) (A) Id 0.0065 @ V GS = 10 V 60 ±75 a 0.008 @ VGS = 4.5 V D TO-220AB Q o TO-263 r 1 J l D RAIN connected to TAB iptt G D S Top V iew


    OCR Scan     		PDF SUP/SUB75N06-06 O-220AB O-263 S-60938-- 26-Apr-99 GS 069 LF SUB75N06-06

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N06-07L N-Channel Enhancement-Mode Transistors Product Summary I d A rDS(on) (ß ) 0.0075 @ VGS = 10 V 0.0085 @ VGS = 4.5 V V(BR)DSS 60 75a D Q TO-220AB o TO-263 t Jl 1 in r DRAIN connected to TAB Top View SUB75N06-07L GD S Top View SUP75N06-07L


    OCR Scan     		PDF SUP/SUB75N06-07L O-220AB SUP75N06-07L O-263 SUB75N06-07L T0-220AB O-263) O-263 S-56920--Rev. 23-Mar-98

    FDS 4800

    Abstract: No abstract text available
    Text: Tem ic SUP/SUB75N06-08 S e m i c o n d u c t o r s N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V ) r DS(on) (£2) I d (A ) 60 0.008 75a D O T O -220A B o T O -263 r 1 Jl DRAIN connected to TAB G D S Top View G D S o s SUB75N06-08 Top View


    OCR Scan     		PDF SUP/SUB75N06-08 -220A SUP75N06-08 SUB75N06-08 O-263) S-47969--Rev. 08-M-96 FDS 4800