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    Vishay Siliconix SUP75N06-08

    MOSFET Transistor, N-Channel, TO-220AB
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    Quest Components SUP75N06-08 1
    • 1 $6.06
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    New Advantage Corporation SUP75N06-08 149 1
    • 1 $7
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    STMicroelectronics SUP75N0608

    N-CHANNEL 60-V (D-S), 175 DEGREE CENTIGRADE MOSFET Power Field-Effect Transistor, 75A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SUP75N0608 322
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    SUP75N06 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUP75N06-07L Vishay Intertechnology N-Channel 60-V (D-S) 175°C MOSFET Original PDF
    SUP75N06-07L-E3 Vishay Transistor Mosfet N-CH 60V 75A 3TO-220AB Original PDF
    SUP75N06-07L SPICE Device Model Vishay N-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SUP75N06-08 Temic Semiconductors N-Channel Enhancement-Mode Transistors Original PDF
    SUP75N06-08 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SUP75N06-08 Vishay Intertechnology N-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SUP75N06-08 SPICE Device Model Vishay N-Channel 60-V (D-S) 175°C MOSFET Original PDF
    SUP75N06-12L Vishay Siliconix N-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SUP75N06-12L SPICE Device Model Vishay N-Channel Enhancement-Mode Transistor, Logic Level Original PDF

    SUP75N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4431 mosfet

    Abstract: AN609 SUP75N06-08 84431
    Text: SUP75N06-08_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUP75N06-08 AN609 03-Jan-08 4431 mosfet 84431

    SUB75N06-08

    Abstract: SUP75N06-08
    Text: SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View SUP75N06-08 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-220AB O-263) O-263 S-47969--Rev. 08-Jul-96 SUB75N06-08 SUP75N06-08

    sup75n06-08 datasheet

    Abstract: SUB75N06-08 SUP75N06-08
    Text: SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-220AB O-263) 18-Jul-08 sup75n06-08 datasheet SUB75N06-08 SUP75N06-08

    AN609

    Abstract: SUP75N06-12L 68357
    Text: SUP75N06-12L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUP75N06-12L AN609 03-Jan-08 68357

    SUB75N06-08

    Abstract: SUP75N06-08
    Text: SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-220AB O-263) S-05111--Rev. 10-Dec-01 SUB75N06-08 SUP75N06-08

    SUP75N06-08

    Abstract: SUB75N06-08
    Text: SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View SUP75N06-08 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-220AB O-263) O-263 S-47969--Rev. 08-Jul-96 SUP75N06-08 SUB75N06-08

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N06Ć08 Siliconix NĆChannel EnhancementĆMode Transistors 175_C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S S SUB75N06Ć08 Top View SUP75N06Ć08


    Original     		PDF SUP/SUB75N0608 O220AB SUB75N0608 SUP75N0608 O220AB S-44639--Rev.

    SUB75N06-08

    Abstract: SUP75N06-08 sup75n0608
    Text: SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-220AB O-263) 08-Apr-05 SUB75N06-08 SUP75N06-08 sup75n0608

    4431 mosfet

    Abstract: 4431 AN609 SUP75N06-07L
    Text: SUP75N06-07L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUP75N06-07L AN609 03-Jan-08 4431 mosfet 4431

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N06-08 Siliconix N-Channel 60-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View SUP75N06-08 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-263) O-263 S-57253--Rev. 24-Feb-98

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View SUP75N06-08 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-220AB O-263) S-57253--Rev. 24-Feb-98

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 75a 60 0.0085 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-07L Top View SUP75N06-07L


    Original     		PDF SUP/SUB75N06-07L O-220AB O-263 SUB75N06-07L SUP75N06-07L O-220AB O-263) S-00652--Rev. 27-Mar-00

    SUP75N06-08

    Abstract: SUB75N06-08 TR95
    Text: SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-263 O-220AB O-263) SUP75N06-08 SUB75N06-08 TR95

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    SUB75N06-06

    Abstract: SUP75N06-06
    Text: SUP/SUB75N06-06 New Product Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 60 "75 a 0.008 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-06 Top View


    Original     		PDF SUP/SUB75N06-06 O-220AB O-263 SUB75N06-06 SUP75N06-06 18-Jul-08 SUB75N06-06 SUP75N06-06

    IRFZ44N complementary

    Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
    Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55


    Original     		PDF BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 HRF3205 harris 4365

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    SI2333DS-T1-E3

    Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
    Text: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)


    Original     		PDF SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 SI7414DN-T1-E3 SI7810DN-T1-E3 70026365Single SI9986CY-T1-E3 SI9986DY-T1-E3 SI9987DY-T1-E3 SI2333DS-T1-E3 SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    a2826

    Abstract: No abstract text available
    Text: Tem ic SUP/SUB75NÖ6-08 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary TO-220AB o TO-263 It h ;O D R A IN connected to TAB ~TT G D S Top View G D S SUB75N06-08 Top View SUP75N06-08 N-Channel M OSFET Absolute Maximum Ratings Tc = 25 °C Unless Otherwise Noted


    OCR Scan     		PDF SUP/SUB75N O-220AB O-263 SUB75N06-08 SUP75N06-08 -220AB O-263) S-44639-- SUP/SUB75N06-08 a2826

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N06-07L N-Channel Enhancement-Mode Transistors Product Summary I d A rDS(on) (ß ) 0.0075 @ VGS = 10 V 0.0085 @ VGS = 4.5 V V(BR)DSS 60 75a D Q TO-220AB o TO-263 t Jl 1 in r DRAIN connected to TAB Top View SUB75N06-07L GD S Top View SUP75N06-07L


    OCR Scan     		PDF SUP/SUB75N06-07L O-220AB SUP75N06-07L O-263 SUB75N06-07L T0-220AB O-263) O-263 S-56920--Rev. 23-Mar-98

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N06-07L S ilic o n ix N-Channel Enhancement-Mode Transistors Product Summary I d A rDS(on) (ß ) 0.0075 @ VGS = 10 V V(BR)DSS 60 75a 0.0085 @ VGS = 4.5 V D Q TO-220AB o TO-263 t 1 0— DRAIN connected to TAB l! TPT Top View SUB75N06-07L GD S Top View


    OCR Scan     		PDF SUP/SUB75N06-07L O-220AB SUP75N06-07L O-263 SUB75N06-07L T0-220AB O-263) O-263 S-56920--Rev. 23-Mar-98

    7553a

    Abstract: No abstract text available
    Text: SUP/SUB75N06-12L VISHAY Siliconix T N-Channel 60-V D-S , 175°C MOSFET New Product PRODUCT SUMMARY r DS(ON) V (BR)DSS (V) •d (A) (-2) 0.012 @ VGS = 10 V 75 0.014 @ V GS= 4.5 V 70 60 D O TO-220AB o TO-263 < DRAIN connected to TAB 1 IPT G D S Top View Ô


    OCR Scan     		PDF SUP/SUB75N06-12L O-220AB O-263 SUP75N06-12L SUB75N06-12L S-59182-- 07-Sep-98 7553a