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    Vishay Siliconix SUB70N03-09P

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    Bristol Electronics SUB70N03-09P 29
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    Quest Components SUB70N03-09P 297
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    v SUB70N0309BP

    Power Field-Effect Transistor, 70A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA SUB70N0309BP 31
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    SUB70N03 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUB70N03-09 Vishay Transistor Mosfet N-CH 30V 70A Original PDF
    SUB70N03-09BP Vishay Intertechnology N-Channel 30-V (D-S), 175 C, MOSFET PWM Optimized Original PDF
    SUB70N03-09BP Vishay Telefunken N-Channel 30-V (D-S) 175C MOSFET PWM Optimized Original PDF
    SUB70N03-09BP-E3 Vishay Transistor Mosfet N-CH 30V 70A 3TO-263 Original PDF
    SUB70N03-09BP SPICE Device Model Vishay N-Channel 30-V (D-S), 175°C MOSFET PWM Optimized Original PDF
    SUB70N03-09-E3 Vishay Transistor Mosfet N-CH 30V 70A Original PDF
    SUB70N03-09P Vishay Intertechnology N-Channel 30-V (D-S), 175 C, MOSFET PWM Optimized Original PDF

    SUB70N03 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175°°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application


    Original     		PDF SUP/SUB70N03-09P 05-Nov-98

    70821

    Abstract: SUB70N03-09P SUB70N03-09
    Text: SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "70a 0.015 @ VGS = 4.5 V "55 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09


    Original     		PDF SUP/SUB70N03-09P O-220AB O-263 SUB70N03-09 SUP70N03-09 18-Jul-08 70821 SUB70N03-09P SUB70N03-09

    S-20102

    Abstract: SUB70N03-09BP SUP70N03-09BP MOSFET SUB70N03
    Text: SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S


    Original     		PDF SUP/SUB70N03-09BP O-220AB O-263 SUB70N03-09BP SUP70N03-09BP S-20102--Rev. 11-Mar-02 S-20102 SUB70N03-09BP SUP70N03-09BP MOSFET SUB70N03

    SUB70N03-09BP

    Abstract: No abstract text available
    Text: SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S


    Original     		PDF SUP/SUB70N03-09BP O-220AB O-263 SUP70N03-09BP SUB70N03-09BP 08-Apr-05

    SUB70N03-09BP

    Abstract: SUP70N03-09BP
    Text: SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S


    Original     		PDF SUP/SUB70N03-09BP O-220AB O-263 SUB70N03-09BP SUP70N03-09BP 18-Jul-08 SUB70N03-09BP SUP70N03-09BP

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB70N03-09BP Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB70N03-09BP 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "70a 0.015 @ VGS = 4.5 V "55 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09


    Original     		PDF SUP/SUB70N03-09P O-220AB O-263 SUP70N03-09 SUB70N03-09 08-Apr-05

    SUB70N03-09P

    Abstract: SUB70N03-09
    Text: SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "70a 0.015 @ VGS = 4.5 V "55 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09


    Original     		PDF SUP/SUB70N03-09P O-220AB O-263 SUB70N03-09 SUP70N03-09 S-59917--Rev. 28-Sep-98 SUB70N03-09P SUB70N03-09

    MOSFET SUB70N03

    Abstract: SUB70N03-09BP SUB70N03-09BP SPICE Device Model
    Text: SPICE Device Model SUP/SUB70N03-09BP Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET PWM Optimized CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application


    Original     		PDF SUP/SUB70N03-09BP 0-to10V 02-Oct-01 MOSFET SUB70N03 SUB70N03-09BP SUB70N03-09BP SPICE Device Model

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB70N03-09BP Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB70N03-09BP gate-to-dr10 S-60545Rev. 10-Apr-06

    SUP70N03-09BP

    Abstract: SUB70N03-09BP
    Text: SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S


    Original     		PDF SUP/SUB70N03-09BP O-220AB O-263 SUB70N03-09BP SUP70N03-09BP S-01237--Rev. 12-Jun-00 SUP70N03-09BP SUB70N03-09BP

    sub70n03

    Abstract: No abstract text available
    Text: SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "70a 0.015 @ VGS = 4.5 V "55 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09


    Original     		PDF SUP/SUB70N03-09P O-220AB O-263 SUP70N03-09 SUB70N03-09 08-Apr-05 sub70n03

    zener zp 278

    Abstract: L6917B L6917BD L6917BDTR C11-C13 phase-2
    Text: L6917B 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT TTL-COMPATIBLE 5 BIT PROGRAMMABLE


    Original     		PDF L6917B 600kHz SO-28 L6917BD L6917BDTR zener zp 278 L6917B L6917BD L6917BDTR C11-C13 phase-2

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    L6917B

    Abstract: L6917BD L6917BDTR
    Text: L6917B 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT TTL-COMPATIBLE 5 BIT PROGRAMMABLE


    Original     		PDF L6917B 600kHz SO-28 L6917BD L6917BDTR 20SA100M 10x10 10x23 L6917B L6917BD L6917BDTR

    LX1684CD-TR

    Abstract: LM78L05 LX1682 LX1684 LX1684CD vishay power pak SO-8 package dimension MBR2545
    Text: LX1684 Voltage-Mode PWM Controller TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ƒ Fixed 175kHz Switching Frequency ƒ Constant Frequency VoltageMode Control Requires No External Compensation ƒ Hiccup-Mode Over-Current Protection ƒ High Efficiency


    Original     		PDF LX1684 175kHz 14-pin LX1684CD-TR LM78L05 LX1682 LX1684 LX1684CD vishay power pak SO-8 package dimension MBR2545

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Design LX1684 Voltage-Mode PWM Controller TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION Current is sensed using the voltage drop across the RDS ON of the MOSFET this sensing is delayed for 1µs to eliminate MOSFET ringing errors.


    Original     		PDF LX1684 LX1684 175kHz LX1682

    sub70n03

    Abstract: L6919C L6919CD L6919CDTR smd diode S4 6A
    Text: L6919C 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENT • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT


    Original     		PDF L6919C 200kHz SO-28 sub70n03 L6919C L6919CD L6919CDTR smd diode S4 6A

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    smb stmicroelectronics cross reference

    Abstract: L6917B L6917BD L6917BDTR diode zener smd sg 64 C5244 SMD diode sg 46
    Text: L6917B 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT TTL-COMPATIBLE 5 BIT PROGRAMMABLE


    Original     		PDF L6917B 600kHz SO-28 L6917BD L6917BDTR smb stmicroelectronics cross reference L6917B L6917BD L6917BDTR diode zener smd sg 64 C5244 SMD diode sg 46

    CDH127

    Abstract: 2SK2857 CRS02 IRF7313 TSSOP-16 XC9213 Transistor Mosfet N-Ch 30V
    Text: Driver Transistor Built-In Synchronous Step-Down DC/DC Controller Ics Input Voltage : 25V XC9213 Series Preliminary May 20, 2003 Ver. 1 ! ! ! ! ! ! ! ! " APPLICATIONS Synchronous, Bootstrap Nch-Nch Drive Input Voltage Range : 2.5V ~ 25.0V Switching Frequency


    Original     		PDF XC9213 300kHz TSSOP-16 O-220AB) SUB70N03-09 O-263) CDH127-6H1, CMS02 CRS02 CDH127 2SK2857 CRS02 IRF7313 Transistor Mosfet N-Ch 30V

    Untitled

    Abstract: No abstract text available
    Text: L6917B 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER • ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT TTL-COMPATIBLE 5 BIT PROGRAMMABLE OUTPUT COMPLIANT WITH VRM 9.0


    Original     		PDF L6917B 600kHz SO-28

    snubber capacitor

    Abstract: smb stmicroelectronics cross reference 1N4148TE 775 cpu connector SMD 1206 RESISTOR 100 OHMS smd 2a 3 PIN fet L6917B L6917BD L6917BDTR 20SA100M
    Text: L6917B 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT TTL-COMPATIBLE 5 BIT PROGRAMMABLE OUTPUT COMPLIANT WITH VRM 9.0


    Original     		PDF L6917B 600kHz SO-28 snubber capacitor smb stmicroelectronics cross reference 1N4148TE 775 cpu connector SMD 1206 RESISTOR 100 OHMS smd 2a 3 PIN fet L6917B L6917BD L6917BDTR 20SA100M

    SUB70N03-09P

    Abstract: 70604
    Text: SUP/SUB70N03-09P VISHAY Vishay Siliconix Y N-Ch 30-V D-S , 175°C, MOSFET PWM Optimized New Product PRO DUCT SUM M ARY R o s (o m ) (£2) ID (A) 0.009 VG S = 10 V ±70* 0.015 © V q s » 4.5 V ±55 V (BR}DM M 30 D O TO-220AB o TO-263 ì I— w DRAIN connected to TAB


    OCR Scan     		PDF SUP/SUB70N03-09P O-220AB O-263 SUP70N03-09 SUB70N03-09 S-58547--Rev. 26-Oct SUP/SUB45N03-13L S-58547-- SUB70N03-09P 70604