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    STMicroelectronics STRH8N10S1

    Trans MOSFET N-CH 100V 6A 3-Pin SMD-0.5 Strip - Bulk (Alt: STRH8N10S1)
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    Avnet Americas STRH8N10S1 Bulk 26 Weeks, 5 Days 10
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    Avnet Silica STRH8N10S1 17 Weeks 1
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    STRH8N10S1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications


    Original
    PDF STRH8N10 STRH8N10S1 DocID018504

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - preliminary data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications


    Original
    PDF STRH8N10 STRH8N10S1 DocID018504

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - preliminary data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications


    Original
    PDF STRH8N10 STRH8N10S1 STRH8N10SG DocID018504

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications


    Original
    PDF STRH8N10 STRH8N10S1 DocID018504