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    STRH8N10 Search Results

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    STRH8N10 Price and Stock

    STMicroelectronics STRH8N10S1

    Trans MOSFET N-CH 100V 6A 3-Pin SMD-0.5 Strip - Bulk (Alt: STRH8N10S1)
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    Avnet Americas STRH8N10S1 Bulk 26 Weeks, 5 Days 10
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    Avnet Silica STRH8N10S1 17 Weeks 1
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    STMicroelectronics STRH8N10SG

    Rad-Hard MOSFET N-Channel 100V 6A 0.3Ohm Gold 3-Pin SMD.5 Strip Pack - Bulk (Alt: STRH8N10SG)
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    Avnet Americas STRH8N10SG Bulk 10
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    STRH8N10 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications


    Original     		PDF STRH8N10 STRH8N10S1 DocID018504

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - preliminary data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications


    Original     		PDF STRH8N10 STRH8N10S1 DocID018504

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH8N10STF3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		PDF STRH8N10STF3 STRH8N10STF1

    STRH8N10STF3

    Abstract: No abstract text available
    Text: STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH8N10STF3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original     		PDF STRH8N10STF3 100kRad 34Mev/cm STRH8N10STF3

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - preliminary data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications


    Original     		PDF STRH8N10 STRH8N10S1 STRH8N10SG DocID018504

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened TO-39 Applications ■ Satellite ■ High reliability


    Original     		PDF STRH8N10 STRH8N10N1 STRH8N10NG

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications


    Original     		PDF STRH8N10 STRH8N10S1 DocID018504

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened TO-39 Applications ■ Satellite ■ High reliability


    Original     		PDF STRH8N10 STRH8N10N1 STRH8N10NG

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH8N10STF3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH8N10STF3 100kRad 34Mev/cm

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10STF1 STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH8N10STF1 100 V STRH8N10STF3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH8N10STF1 STRH8N10STF3 100kRad 34Mev/cm

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened TO-39 Applications ■ Satellite ■ High reliability


    Original     		PDF STRH8N10 STRH8N10N1 STRH8N10NG

    STRH8N10STF3

    Abstract: STRH8N10 JESD97 mar 806
    Text: STRH8N10STF1 STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH8N10STF1 100 V STRH8N10STF3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH8N10STF1 STRH8N10STF3 100kRad 34Mev/cm STRH8N10STF3 STRH8N10 JESD97 mar 806