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    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened TO-39 Applications ■ Satellite ■ High reliability


    Original     		PDF STRH8N10 STRH8N10N1 STRH8N10NG

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened TO-39 Applications ■ Satellite ■ High reliability


    Original     		PDF STRH8N10 STRH8N10N1 STRH8N10NG

    Untitled

    Abstract: No abstract text available
    Text: STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened TO-39 Applications ■ Satellite ■ High reliability


    Original     		PDF STRH8N10 STRH8N10N1 STRH8N10NG