Untitled
Abstract: No abstract text available
Text: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH12P10ESY3
O-257AA
100kRad
34Mev/cm
O-257AA
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STRH12P10ESY1
Abstract: STRH12P10ESY3
Text: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight
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Original
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PDF
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STRH12P10ESY3
O-257AA
100kRad
34Mev/cm
STRH12P10ESY1
STRH12P10ESY3
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JESD97
Abstract: STRH12P10ESY1 STRH12P10ESY3 MG 5248
Text: STRH12P10ESY1 STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH12P10ESY1 100 V STRH12P10ESY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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Original
|
PDF
|
STRH12P10ESY1
STRH12P10ESY3
O-257AA
34Mev/cm
JESD97
STRH12P10ESY1
STRH12P10ESY3
MG 5248
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