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    STRH100N6 Search Results

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    STRH100N6 Price and Stock

    STMicroelectronics STRH100N6HYG

    Rad-Hard N-channel 60 V 40 A Power MOSFET - Bulk (Alt: STRH100N6HYG)
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    Avnet Americas STRH100N6HYG Bulk 10
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    Avnet Silica STRH100N6HYG 17 Weeks 1
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    STMicroelectronics STRH100N6HYT

    Rad-Hard N-channel 60 V 40 A Power MOSFET (Alt: STRH100N6HYT)
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    Avnet Silica STRH100N6HYT 17 Weeks 1
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    STMicroelectronics STRH100N6HY1

    STMSTRH100N6HY1 (Alt: STRH100N6HY1)
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    Avnet Silica STRH100N6HY1 17 Weeks 1
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    STRH100N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


    Original     		PDF STRH100N6 O-254AA STRH100N6HY1 DocID18353

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH100N6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original     		PDF STRH100N6FSY3 O-254AA 100kRad 34Mev/cm

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


    Original     		PDF STRH100N6 O-254AA STRH100N6HY1 DocID18353

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 80 A Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 TO-254AA Applications ■ Satellite


    Original     		PDF STRH100N6 O-254AA STRH100N6HY1

    am-008

    Abstract: MIL-STD-750E STRH100N6H
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


    Original     		PDF STRH100N6 O-254AA STRH100N6HY1 STRH100N6HYG DocID18353 am-008 MIL-STD-750E STRH100N6H

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6FSY3 N-channel 60V - 0.012Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH100N6FSY3 60V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		PDF STRH100N6FSY3 O-254AA STRH100N6

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH100N6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH100N6FSY3 O-254AA 100kRad 34Mev/cm

    1128 marking

    Abstract: JESD97
    Text: STRH100N6FSY1 STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N6FSY1 60 V STRH100N6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH100N6FSY1 STRH100N6FSY3 O-254AA 34Mev/cm 1128 marking JESD97

    STRH100N6H

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 80 A Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 TO-254AA Applications ■ Satellite


    Original     		PDF STRH100N6 O-254AA STRH100N6HY1 STRH100N6HYG STRH100N6H

    MIL-STD-750E

    Abstract: malaysia 3916 mosfet STRH100N6FSY01 STRH100N st diode marking code TO3
    Text: STRH100N6 N-channel 60 V, 0.012 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened


    Original     		PDF STRH100N6 O-254AA STRH100N6FSY1y MIL-STD-750E malaysia 3916 mosfet STRH100N6FSY01 STRH100N st diode marking code TO3

    TC 2608

    Abstract: JESD97 STRH100N6FSY1
    Text: STRH100N6FSY1 STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N6FSY1 60 V STRH100N6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH100N6FSY1 STRH100N6FSY3 O-254AA 34Mev/cm TC 2608 JESD97 STRH100N6FSY1

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 80 A Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 TO-254AA Applications ■ Satellite


    Original     		PDF STRH100N6 O-254AA STRH100N6HY1