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    STMicroelectronics STRH100N10HY1

    Trans MOSFET N-CH 100V 48A 3-Pin TO-254AA Carrier T/R - Bulk (Alt: STRH100N10HY1)
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    STMicroelectronics STRH100N10HYT

    Trans MOSFET N-CH 100V 48A 3-Pin TO-254AA T/R - Bulk (Alt: STRH100N10HYT)
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    STMicroelectronics STRH100N10HYG

    Trans MOSFET N-CH 100V 48A 3-Pin TO-254AA Carrier T/R - Bulk (Alt: STRH100N10HYG)
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    STRH100N10H Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mΩ 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH100N10 O-254AA SC30150 DocID17486

    Doc ID 17486 Rev 7

    Abstract: No abstract text available
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite


    Original     		PDF STRH100N10 O-254AA STRH100N10HY1 STRH100N1 Doc ID 17486 Rev 7

    Untitled

    Abstract: No abstract text available
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH100N10 O-254AA SC30150 DocID17486

    Untitled

    Abstract: No abstract text available
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite


    Original     		PDF STRH100N10 O-254AA STRH100N10HY1 STRH100N10HY01

    STRH100N10H

    Abstract: vd 5205
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite


    Original     		PDF STRH100N10 O-254AA STRH100N10HY1 STRH100N1 STRH100N10H vd 5205