Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    STP6N25FI Search Results

    STP6N25FI Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STP6N25FI STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STP6N25FI STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STP6N25FI Toshiba Power MOSFETs Cross Reference Guide Original PDF

    STP6N25FI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STP6N25

    Abstract: STP6N25FI
    Text: STP6N25 STP6N25FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STP6N25 STP6N25FI • ■ ■ ■ ■ VDSS R DS on ID 250 V 250 V <1Ω <1Ω 6A 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original
    PDF STP6N25 STP6N25FI 100oC O-220 ISOWATT220 STP6N25 STP6N25FI

    STP6N25

    Abstract: STP6N25FI
    Text: STP6N25 STP6N25FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STP6N25 STP6N25FI • ■ ■ ■ ■ V DSS R DS on ID 250 V 250 V < 1Ω < 1Ω 6A 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original
    PDF STP6N25 STP6N25FI 100oC O-220 ISOWATT220 STP6N25 STP6N25FI

    STP6N25

    Abstract: STP6N25FI
    Text: STP6N25 STP6N25FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STP6N25 STP6N25FI • ■ ■ ■ ■ VDSS R DS on ID 250 V 250 V <1Ω <1Ω 6A 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original
    PDF STP6N25 STP6N25FI 100oC O-220 ISOWATT220 STP6N25 STP6N25FI

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


    Original
    PDF OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    Untitled

    Abstract: No abstract text available
    Text: • 7 ^ 2 ^ 2 3 7 Q Q M b 3 G S T3Ö « S f i T H STP6N25 STP6N25FI fZ T SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STP6N25 STP6N25FI V d ss R d S o ii Id 250 V 250 V < 1a < 1 SÎ 6 A 4 A . TYPICAL RDS(on) = 0.7 Q


    OCR Scan
    PDF STP6N25 STP6N25FI 004b311 STP6N25/FI

    Untitled

    Abstract: No abstract text available
    Text: £jï SGS-THOMSON ULKgraMOeS STP6N25 STP6N25FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTORS PRELIMINARY DATA TYP E S TP6N 25 STP6N 25FI • . . . . V dss RDS on Id 250 V 250 V < 1 Q. < 1 Q. 6 A 4 A TYPICAL RDS(on) = 0.7 £2 AVALANCHE RUGGED TECHNOLOGY


    OCR Scan
    PDF STP6N25 STP6N25FI

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan
    PDF

    SGS M114S

    Abstract: M114S TDA 931 PS TDA7284 equivalent TDA2003 equivalent TDA73XX TOKO kacs 10.7MHz fm coil TBA820M equivalent 27mhz remote control transmitter circuit FOR CAR UC3840
    Text: AUDIO POWER & PROCESSING ICs DATABOOK 1st EDITION JUNE 1991 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS W ITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics.


    OCR Scan
    PDF