Untitled
Abstract: No abstract text available
Text: STP60NS04Z N - CHANNEL CLAMPED 10m ^ - 60A - T0-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA TYPE STP60N S04Z V dss R dS oii Id CLAM PED < 0 .0 1 5 Q. 60 A . . TYPICAL RDS(on) =0.010 £2 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE
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STP60NS04Z
T0-220
STP60N
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Untitled
Abstract: No abstract text available
Text: STP60NS04Z N - CHANNEL CLAMPED 10m£2 - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP60N S04Z V R d S o ii Id <0.015 Q. 60 A dss CLAM PED . TYPICAL Ros(on) =0.010 Î2 . 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE . 175 °C MAXIMUM JUNCTION
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STP60NS04Z
O-220
STP60N
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GC27980
Abstract: No abstract text available
Text: SGS-THOMSON ï ULKgraMOeS £j STP60N05 STP60N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP60N 05 STP60N 05FI V dss RDS on Id 50 V 50 V < 0.0 2 Q. < 0.0 2 Q. 60 A 32 A . Q . . TYPICAL RDs(on) = 0.017 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED
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TP60N
STP60N
STP60N05
STP60N05FI
GC27980
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stp60n06
Abstract: No abstract text available
Text: SGS-THOMSON £ j ï ULKgraMOeS STP60N06 STP60N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP60N 06 STP60N 06FI V dss RDS on Id 60 V 60 V < 0.0 2 Q. < 0.0 2 Q. 60 A 32 A . Q . . TYPICAL RDs(on) = 0.017 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED
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STP60N06
STP60N06FI
TP60N
STP60N
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STP60N06-16
Abstract: STP60N06 STP60N05 STP60N05-16 4s32 LD30-A STP60N05 10 LD30A
Text: 7 ^ 2 ^ 2 3 7 D 0 4 b S 5 3 4 5 2 M S G T H SGS-THOMSON iï*^@^[I gTÎMO(gS STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05-16 STP60N 06-16 • . ■ ■ ■ . ■ V dss R D S (o n Id 50 V 60 V < 0.016 Q < 0.016 a
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DD4bS53
STP60N05-16
STP60N06-16
STP60N05
STP60N06-
7T2C1237
STP60N05-16/STP60N06-16
STP60N06-16
STP60N06
4s32
LD30-A
STP60N05 10
LD30A
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SC06140
Abstract: STP60NE03L-10 STP60N 10
Text: = 7 S G S -T H O M S O N k 7# [MgMilLie'irifiiiSMfSS STP60NE03L-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V ds s S T P 60N E 03L-1 0 30 V R Id d S o i i < 0 .0 1 o a 60 A . TYPICAL R Ds(on) =0.007 . EXCEPTIONAL dv/dt C APABILITY
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STP60NE03L-10
STP60NE03L-1
O-220
P011C
SC06140
STP60NE03L-10
STP60N 10
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FZ 44 NS
Abstract: STP60NE06-16FI E0616
Text: SGS-THOMSON STP60NE06-16 STP60NE06-16FI N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V dss RDS on Id S T P 6 0 N E 0 6 - 16 S T P 6 0 N E 0 6 - 16FI 60 V 60 V < 0 .016 Q. < 0 .016 Q. 60 A 35 A . TYPICAL Ros(on) =0.013 £2
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STP60NE06-16
STP60NE06-16FI
STP60NE06-16/FI
ISOWATT22Q
FZ 44 NS
STP60NE06-16FI
E0616
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYP E V dss R D S o n Id STP60NE06-1 6 STP60NE06-1 6FP 60 V 60 V < 0.016 Q. < 0.016 Q. 60 A 35 A . TYPICAL Ros(on) =0.013 £2 . EXCEPTIONAL dV/dt CAPABILTY
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STP60NE06-16
STP60NE06-16FP
STP60NE06-1
STP60NE06-16/FP
O-22QFP
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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