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Catalog Datasheet	MFG & Type	PDF	Document Tags
Marking 52a Abstract: TSOP-6P Text: STP3467 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3467 is the P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly	Original	PDF	STP3467 STP3467 -20V/-5 90mohm -20V/-3 110mohm -20V/-1 140mohm Marking 52a TSOP-6P

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Marking 52a

Abstract: TSOP-6P
Text: STP3467 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3467 is the P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

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STP3467 STP3467 -20V/-5 90mohm -20V/-3 110mohm -20V/-1 140mohm Marking 52a TSOP-6P