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    STMicroelectronics STP260N6F6

    MOSFET N-CH 60V 120A TO220
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    STMicroelectronics STP260N6F6 1
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    STP260N6F6 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STP260N6F6 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 120A TO220 Original PDF

    STP260N6F6 Datasheets Context Search

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    STP260N6F6

    Abstract: No abstract text available
    Text: STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A TO-220, I²PAK STripFET VI DeepGATE™ Power MOSFET Features Order codes VDSS RDS on max ID STP260N6F6 STI260N6F6 60 V < 0.003 Ω 120 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness


    Original     		PDF STI260N6F6 STP260N6F6 O-220, STP260N6F6 STI260N6F6 O-220 260N6F6 O-220

    Untitled

    Abstract: No abstract text available
    Text: STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A TO-220, I²PAK STripFET VI DeepGATE™ Power MOSFET Features Order codes VDSS RDS on max ID STP260N6F6 STI260N6F6 60 V < 0.003 Ω 120 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness


    Original     		PDF STI260N6F6 STP260N6F6 O-220, O-220

    STP260N6F6

    Abstract: STI260N6F6
    Text: STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A STripFET VI DeepGATE™ Power MOSFET in TO-220 and I²PAK packages Features Order codes STI260N6F6 STP260N6F6 VDSS RDS on max ID TAB TAB 60 V < 0.003 Ω • Low gate charge ■ Very low on-resistance


    Original     		PDF STI260N6F6 STP260N6F6 O-220 O-220 260N6F6 STP260N6F6

    STP260N6F6

    Abstract: 260n6f6 STH260N6F6-2
    Text: STH260N6F6-2 STP260N6F6 N-channel 60 V, 0.0016 Ω, 180 A TO-220, H2PAK-2 STripFET DeepGATE™ VI Power MOSFET Preliminary data Features Type VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A STP260N6F6 60 V < 0.003 Ω 120 A • N-channel enhancement mode


    Original     		PDF STH260N6F6-2 STP260N6F6 O-220, O-220 STP260N6F6 260n6f6 STH260N6F6-2

    Untitled

    Abstract: No abstract text available
    Text: STH260N6F6-2 N-channel 60 V, 0.0016 Ω, 180 A H²PAK-2 STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness


    Original     		PDF STH260N6F6-2 STH26