STP19N06L

Abstract: STP19N06LFI
Contextual Info: STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP19N06L STP19N06LFI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY

19NM50N

Abstract: STP19nm50n STW19NM50N STF19NM50N stf19nm50 17079 stp19nm50 19nm50
Contextual Info: STF19NM50N STP19NM50N, STW19NM50N N-channel 500 V, 0.2 Ω, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247 Features Type STF19NM50N STP19NM50N STW19NM50N VDSS @ TJmax RDS on max 550 V < 0.25 Ω ID 2 14 A • 100% avalanche tested ■ Low input capacitances and gate charge

B19NB20

Abstract: STP19NB20
Contextual Info: STP19NB20 - STP19NB20FP STB19NB20-1 N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH MOSFET TYPE STP19NB20 STP19NB20FP STB19NB20-1 • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V 200 V < 0.18 Ω < 0.18 Ω < 0.18 Ω 19 A 10 A 19 A TYPICAL RDS(on) = 0.15 Ω

0119A

Abstract: STP19N06L STP19N06LFI c19a
Contextual Info: STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP19N06L STP19N06LFI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY

c1913

Abstract: STP19N06 STP19N06FI 0119a
Contextual Info: STP19N06 STP19N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP19N06 STP19N06FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

p19nb20

Abstract: P19NB20FP p19nb20 morocco p19nb2 STP19NB20 STP19NB20FP
Contextual Info: STP19NB20 STP19NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V DSS R DS on ID STP19NB20 STP19NB20F P 200 V 200 V < 0.180 Ω < 0.180 Ω 19 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

19nf20

Contextual Info: STB19NF20 - STF19NF20 STP19NF20 N-channel 200V - 0.15Ω - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID pw STB19NF20 200V <0.16Ω 15A 90W STF19NF20 200V <0.16Ω 15A 25W STP19NF20 200V <0.16Ω 15A 90W

19n06l

Contextual Info: *57 SGS-THOMSON STP19N05L STP19N06L ¡O N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TENTATIVE DATA TYPE . . . . . . . . V dss RDS on Id S TP19N 05L 50 V 0.1 i i 19 A STP19N 06L 60 V 0.1 Si 19 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

STP19N05L

Abstract: STP19N06L
Contextual Info: SGS-THOMSON STP19N05L STP19N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TENTATIVE DATA TYPE Id V d ss RDS on STP19N05L 50 V 0.1 n 19 A STP19N06L 60 V 0.1 £2 19 A • ■ . ■ ■ ■ . ■ AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: * 5 S T P 1 9 N06 S T P 1 9 N 0 6 FI S G S -T H O M S O N ULKgraMOeS 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STP19N06 S TP19N06FI dss R D S o n Id 60 V 60 V < 0.1 a < 0.1 a 19 A 13 A • TYPICAL RDS(on) = 0.085 Q . AVALANCHE RUGGED TECHNOLOGY

STW19NM50N

Contextual Info: STF19NM50N, STP19NM50N, STW19NM50N N-channel 500 V, 0.2 Ω typ., 14 A MDmesh II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes RDS on max ID 550 V 0.25 Ω 14 A STF19NM50N 3 1 VDS @ TJmax 3 2 1

STP19N06

Abstract: STP19N06FI
Contextual Info: STP19N06 STP19N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP19N06 STP19N06FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP19NB20FP

Contextual Info: * MODELLING FOR STP19NB20FP .SUBCKT stp19nb20fp 1 2 3 LG 2 4 7.5n LS 12 3 7.5n LD 6 1 4.5n RG 4 5 0.166678 RS 9 12 0.537E-5 RD 7 6 0.605E-1 RJ 8 7 0.243E-3 CGS 5 9 0.920243E-09 CGD 7 10 0.899282E-09 CK 11 7 0.261828E-10 DGD 11 7 DGD DBS 12 6 DBS DBD 9 7 DBD

B19NB20

Abstract: 19NB20 STP19NB20
Contextual Info: STP19NB20 - STP19NB20FP STB19NB20-1 N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH MOSFET TYPE STP19NB20 STP19NB20FP STB19NB20-1 • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V 200 V < 0.18 Ω < 0.18 Ω < 0.18 Ω 19 A 10 A 19 A TYPICAL RDS(on) = 0.15 Ω

STP19NB20

Contextual Info: STP19NB20 STP19NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V dss RDS on Id STP19N B20 STP19NB20FP 200 V 200 V < 0.1 80 Î2 < 0.1 80 Q 19 A 10 A • . . . . TYPICAL RDS(on) = 0 .1 5 0 ^ EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STP19NB20

Abstract: 19NB20 B19NB20 STB19NB20-1 STP19NB20FP
Contextual Info: STP19NB20 - STP19NB20FP STB19NB20-1 N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH MOSFET TYPE STP19NB20 STP19NB20FP STB19NB20-1 • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V 200 V < 0.18 Ω < 0.18 Ω < 0.18 Ω 19 A 10 A 19 A TYPICAL RDS(on) = 0.15 Ω

Contextual Info: * 5 SGS-THOMSON ¡[LKgraMOeS 7 STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E STP19N 06L S TP19N06LFI V dss RDS on Id 60 V 60 V < 0.1 a < 0.1 a 19 A 13 A • TYPICAL RDS(on) = 0.085 Q . . AVALANCHE RUGGED TECHNOLOGY

19nb20

Abstract: l7812 STP19NB20 STP19NB20FP STB19NB20-1 DSASW003744
Contextual Info: STP19NB20 - STP19NB20FP STB19NB20-1 N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH MOSFET TYPE STP19NB20 STP19NB20FP STB19NB20-1 VDSS RDS on ID 200 V 200 V 200 V < 0.18 Ω < 0.18 Ω < 0.18 Ω 19 A 10 A 19 A TYPICAL RDS(on) = 0.15 Ω

19NF20

Abstract: STF19NF20 STB19NF20
Contextual Info: STB19NF20, STF19NF20, STP19NF20 N-channel 200 V, 0.15Ω typ., 15 A MESH OVERLAY Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet — production data Features TAB Type VDSS RDS on ID pw STB19NF20 200V <0.16Ω 15A 90W 3 1 STF19NF20 200V <0.16Ω

P19N20

Abstract: B19N20 STP19N20 p19n
Contextual Info: STB19N20 STP19N20 N-channel 200V - 0.15Ω - 15A - TO-220 - D2PAK MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID STB19N20 200V <0.16Ω 15A STP19N20 200V <0.16Ω 15A • Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances

19NF20

Abstract: STF19NF20 STP19NF20 JESD97 STB19NF20 9451A STF9NF20
Contextual Info: STB19NF20 - STF19NF20 STP19NF20 N-channel 200V - 0.15Ω - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID pw STB19NF20 200V <0.16Ω 15A 90W STF19NF20 200V <0.16Ω 15A 25W STP19NF20 200V <0.16Ω 15A 90W

p19nb20

Abstract: P19NB20FP p19nb20 morocco p19nb2 STP19NB20 p19n p19nb l289 stp19nb20fp datasheet STP19NB20FP
Contextual Info: STP19NB20 STP19NB20FP  N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V DSS R DS on ID ST P19NB20 ST P19NB20FP 200 V 200 V < 0.180 Ω < 0.180 Ω 19 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STP19NB20

Contextual Info: STP19NB20 STP19NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET . TYPE V dss RDS on Id S TP19N B20 STP19NB20FP 200 V 200 V < 0.1 80 Q. < 0.1 80 Q. 19 A 10 A T Y P IC A L Ros(on) = 0 .1 5 0 £2 . E X T R E M E L Y H IG H dv/dt C A P A B IL IT Y . .

stu9nc80zi

Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
Contextual Info: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L