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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly	Original	PDF	STN8822A STN8822A 25m-ohm 42m-ohm

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Untitled

Abstract: No abstract text available
Text: STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

Original

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STN8822A STN8822A 25m-ohm 42m-ohm