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    STK14N05 Search Results

    STK14N05 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STK14N05 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STK14N05 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    STK14N05 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STK14N05 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)14# I(DM) Max. (A) Pulsed I(D)10 @Temp (øC)100# IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50# Minimum Operating Temp (øC)


    Original
    PDF STK14N05

    STK14N05

    Abstract: STK14N06 diode AR s1 56 P032B
    Text: STK14N05 STK14N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STK14N05 50 V < 0.12 Ω 14 A STK14N06 60 V < 0.12 Ω 14 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original
    PDF STK14N05 STK14N06 100oC 175oC OT-82 OT-194 STK14N06 diode AR s1 56 P032B

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    STK14N06

    Abstract: No abstract text available
    Text: S G S - T H O M ¿ 5 S T K 14N05 S T K 14N06 S O N ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V R D S o n dss STK14N05 50 V < 0.12 STK14N06 60 V 0.12 < Id a a 14 A 14 A • TYPICAL RDS(on) = 0.1 Q


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    PDF 14N05 14N06 STK14N05 STK14N06 STK14N05/STK14N06 OT-194 P032B STK14N06

    14N05

    Abstract: BR03 TK14N GCJ4360
    Text: STK14N05 STK14N06 SGS-THOMSON iL[IOT g «§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE Voss RDS(on) Id STK14N 05 50 V 0 .1 2 Ü 14 A 60 V 0.12 £2 14 A STK14N 06 ! r AVALANCHE RUGGEDNESS TECHNOLOGY , 100% AVALANCHE TESTED , REPETITIVE AVALANCHE DATA AT 100°C


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    PDF STK14N05 STK14N06 STK14N OT-82 OT-194 STK14N05/STK14N06 GC344 14N05 BR03 TK14N GCJ4360

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    PDF

    K14N05

    Abstract: 4N06 4N05
    Text: *57 s t k 1 4N o5 S T K 1 4 N 06 S G S -T H O M S O N ilLHCTIIMDe N - CHANNEL ENHANCEMENT MODE _ POWER MQS TRANSISTOR PRELI MI NARY DATA T YPE V dss R DS on Id STK14N 05 50 V < 0.12 a 14 A STK14N 06 60 V < 0.12 £2 14 A • . ■ ■ . ■ ■ .


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    PDF STK14N K14N05 4N06 4N05

    TSD45N50V

    Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
    Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000


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    PDF STP30N05 BUZ11A STP25N05 BUZ10 STLT29 BUZ71 IRFZ20 BUZ71A STP17N STLT19 TSD45N50V TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V