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    STGW Price and Stock

    STMicroelectronics STGW19NC60HD

    IGBT 600V 42A TO247
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    DigiKey STGW19NC60HD Tube 4,850 1
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    STMicroelectronics STGW19NC60HD 5,242 1
    • 1 $3.05
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    ComSIT USA STGW19NC60HD 570
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    Avnet Silica STGW19NC60HD 4,860 15 Weeks 30
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    STMicroelectronics STGW25M120DF3

    IGBT TRENCH FS 1200V 50A TO247-3
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    DigiKey STGW25M120DF3 Tube 1,150 1
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    Avnet Americas STGW25M120DF3 Tube 15 Weeks 600
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    ComSIT USA STGW25M120DF3 540
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    Avnet Silica STGW25M120DF3 390 16 Weeks 30
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    STMicroelectronics STGWA60V60DF

    IGBT TRENCH FS 600V 80A TO247
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    DigiKey STGWA60V60DF Tube 730 1
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    Avnet Americas STGWA60V60DF Tube 15 Weeks 600
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    Avnet Silica STGWA60V60DF 1,200 16 Weeks 30
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    STMicroelectronics STGW25H120F2

    IGBT TRENCH FS 1200V 50A TO247-3
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    DigiKey STGW25H120F2 Tube 600 1
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    Avnet Americas STGW25H120F2 Tube 15 Weeks 600
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    Mouser Electronics STGW25H120F2 740
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    STMicroelectronics STGW25H120F2 740 1
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    Avnet Silica STGW25H120F2 97,200 16 Weeks 30
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    Win Source Electronics STGW25H120F2 22,300
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    • 100 $6.595
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    STMicroelectronics STGWA25H120DF2

    IGBT HB 1200V 25A HS TO247-3
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    DigiKey STGWA25H120DF2 Tube 591 1
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    Avnet Americas STGWA25H120DF2 Tube 15 Weeks 600
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    STGW Datasheets (190)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STGW10M65DF2 STMicroelectronics Discrete Semiconductor Products - Transistors - IGBTs - Single - TRENCH GATE FIELD-STOP IGBT M SE Original PDF
    STGW12NB60H STMicroelectronics N-CHANNEL 12A - 600V TO-247 POWERMESH IGBT Original PDF
    STGW12NB60H STMicroelectronics N-Channel 12 A - 600 V - TO-247 PowerMESH IGBT Original PDF
    STGW12NB60H STMicroelectronics N-CHANNEL 12A - 600V TO-247 PowerMESH IGBT Original PDF
    STGW12NB60HD STMicroelectronics N-CHANNEL 12A - 600V TO-247 PowerMESH IGBT Original PDF
    STGW12NB60HD STMicroelectronics N-CHANNEL 12A - 600V TO-247 POWERMESH IGBT Original PDF
    STGW15H120DF2 STMicroelectronics Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT H-SERIES 1200V 15A TO-247 Original PDF
    STGW15H120F2 STMicroelectronics Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT H-SERIES 1200V 15A TO-247 Original PDF
    STGW15M120DF3 STMicroelectronics Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 30A 259W Original PDF
    STGW15S120DF3 STMicroelectronics Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 15A TO247 Original PDF
    STGW19NC60H STMicroelectronics 19 A - 600 V - very fast IGBT Original PDF
    STGW19NC60H STMicroelectronics 19 A - 600 V - very fast IGBT Original PDF
    STGW19NC60HD STMicroelectronics 19 A - 600 V - very fast IGBT Original PDF
    STGW19NC60HD STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 42A 140W TO247 Original PDF
    STGW19NC60W STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 42A 140W TO247 Original PDF
    STGW19NC60WD STMicroelectronics N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Original PDF
    STGW20H60DF STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 167W TO247 Original PDF
    STGW20H65FB STMicroelectronics Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 650V 40A 168W TO247 Original PDF
    STGW20IH125DF STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 1250V 40A 259W TO-247 Original PDF
    STGW20NB60H STMicroelectronics N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT Original PDF
    ...

    STGW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STGFW80V60F, STGW80V60F, STGWT80V60F Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 80 A


    Original     		PDF STGFW80V60F, STGW80V60F, STGWT80V60F O-247 DocID026386

    STGW12NB60H

    Abstract: No abstract text available
    Text: STGW12NB60H N-CHANNEL 12A - 600V − TO-247 PowerMESH IGBT TYPE STGW12NB60H • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 12 A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original     		PDF STGW12NB60H O-247 50kHz STGW12NB60H

    GW40NC60KD

    Abstract: No abstract text available
    Text: STGW40NC60KD 600 V, 40 A short-circuit rugged IGBT Datasheet - production data Features • Low on-voltage drop VCE(sat • Low Cres / Cies ratio (no cross conduction susceptibility) • Short-circuit withstand time 10 µs 2 • IGBT co-packaged with ultra fast free-wheeling


    Original     		PDF STGW40NC60KD O-247 GW40NC60KD DocID14807 GW40NC60KD

    GW45HF60WD

    Abstract: STGW45HF60WD gw45hf60 ST IGBT code marking
    Text: STGW45HF60WD 45 A, 600 V ultra fast IGBT Preliminary data Features • Improved Eoff at elevated temperature ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Ultra fast soft recovery antiparallel diode Applications 2 3 1 ■ Welding ■ High frequency converters


    Original     		PDF STGW45HF60WD O-247 GW45HF60WD STGW45HF60WD gw45hf60 ST IGBT code marking

    Untitled

    Abstract: No abstract text available
    Text: STGW40H65DFB STGWT40H65DFB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V


    Original     		PDF STGW40H65DFB STGWT40H65DFB O-247 SC12850 DocID024363

    Untitled

    Abstract: No abstract text available
    Text: STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features • Designed for soft commutation only TAB • Maximum junction temperature: TJ = 175 °C • Minimized tail current 2 • VCE sat = 2.0 V (typ.) @ IC = 25 A


    Original     		PDF STGW28IH125DF STGWT28IH125DF O-247 DocID025268

    STGW40NC60V

    Abstract: No abstract text available
    Text: STGW40NC60V N-CHANNEL 40A - 600V TO-247 Hyper Fast PowerMESH IGBT PRELIMINARY DATA TYPE STGW40NC60V • ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.5 V 40 A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE


    Original     		PDF STGW40NC60V O-247 STGW40NC60V

    Untitled

    Abstract: No abstract text available
    Text: STGW40H120DF2 1200 V, 40 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 40 A • 5 s minimum short circuit withstand time at


    Original     		PDF STGW40H120DF2 O-247 DocID023753

    Untitled

    Abstract: No abstract text available
    Text: STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 3 3 1 1 D²PAK TO-220


    Original     		PDF STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF O-220 O-247 DocID024361

    GW20NC60

    Abstract: No abstract text available
    Text: STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Hyper Fast PowerMESH IGBT TARGET DATA TYPE STGW20NC60VD • ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC (#) @100°C 600 V < 2.5 V 30 A HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original     		PDF STGW20NC60VD O-247 GW20NC60

    Untitled

    Abstract: No abstract text available
    Text: STGFW20V60F, STGW20V60F, STGWT20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 1 • Tail-less switching off 3 2 • Low saturation voltage: VCE sat = 1.8 V (typ.)


    Original     		PDF STGFW20V60F, STGW20V60F, STGWT20V60F O-247 DocID024851

    GW40V60DF

    Abstract: No abstract text available
    Text: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution


    Original     		PDF STGW40V60DF STGWT40V60DF O-247 DocID024402 GW40V60DF

    Untitled

    Abstract: No abstract text available
    Text: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current


    Original     		PDF STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366

    Untitled

    Abstract: No abstract text available
    Text: STGW40N120KD 40 A - 1200 V - short circuit rugged IGBT Preliminary Data Features • Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling diode 2 3 1 Application


    Original     		PDF STGW40N120KD O-247

    20NB60H

    Abstract: No abstract text available
    Text: STGW20NB60H  N-CHANNEL 20A - 600V - TO-247 PowerMESH IGBT T YPE STGW 20NB60H • ■ ■ ■ ■ ■ V CES V CE sat IC 600 V < 2.8 V 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION


    Original     		PDF STGW20NB60H O-247 20NB60H 120kHz) 20NB60H

    GW20NB60K

    Abstract: GW20NB60 gp20nb60 STGP20NB60K STGW20NB60K
    Text: STGP20NB60K STGW20NB60K N-CHANNEL 20A - 600V - TO-220/TO-247 SHORT CIRCUIT PROOF PowerMESH IGBT TYPE STGP20NB60K STGW20NB60K • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V 600 V < 2.8 V < 2.8 V 20 A 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)


    Original     		PDF STGP20NB60K STGW20NB60K O-220/TO-247 O-220 O-247 GW20NB60K GW20NB60 gp20nb60 STGP20NB60K STGW20NB60K

    GW40N120

    Abstract: GW40N120KD STGW40N120 STGW40N120KD GWA40N120KD STGWA40N120KD
    Text: STGW40N120KD STGWA40N120KD 40 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features • Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode


    Original     		PDF STGW40N120KD STGWA40N120KD O-247 GW40N120KD GWA40N120KD O-247 GW40N120 STGW40N120 STGWA40N120KD

    STGW40NC60WD

    Abstract: icl 298 HF IGBT GW40NC60WD ic MARKING QG JESD97
    Text: STGW40NC60WD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW40NC60WD 600V IC VCE sat (Max)@ 25°C @100°C <2.5V 40A • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation


    Original     		PDF STGW40NC60WD O-247 STGW40NC60WD icl 298 HF IGBT GW40NC60WD ic MARKING QG JESD97

    GW35HF60W

    Abstract: STGW35HF60W STGF35HF60W gf35hf60w C5000 IC200 gf35
    Text: STGF35HF60W STGW35HF60W 35 A, 600 V Ultrafast IGBT Features • Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses Applications 2 3 3 1 ■ Welding ■ High frequency converters ■ Power factor correction TO-247 1 2 TO-220FP


    Original     		PDF STGF35HF60W STGW35HF60W O-247 O-220FP GF35HF60W GW35HF60W STGW35HF60W STGF35HF60W gf35hf60w C5000 IC200 gf35

    Untitled

    Abstract: No abstract text available
    Text: STGW80H65DFB STGWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		PDF STGW80H65DFB STGWT80H65DFB O-247 DocID024366

    Untitled

    Abstract: No abstract text available
    Text: STGW60V60F Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 60 A • Tight parameters distribution


    Original     		PDF STGW60V60F O-247 DocID024701

    Untitled

    Abstract: No abstract text available
    Text: STGW40H65FB STGWT40H65FB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 2 1 1 TO-247 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		PDF STGW40H65FB STGWT40H65FB O-247 DocID025171

    GW60H65DFB

    Abstract: No abstract text available
    Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB

    Untitled

    Abstract: No abstract text available
    Text: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT Features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction


    Original     		PDF STGP30NC60W STGW30NC60W O-247 O-220 O-247