Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    STDM80 Search Results

    STDM80 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STDM80 Samsung Electronics STD80 0.5 Micron STD80 Standard Cell Library Supply Voltage (V) = 5 Technology(micron) = 0.5micron Original PDF

    STDM80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TDA 7378

    Abstract: TDA 7822 block diagram baugh-wooley multiplier tda 12062 equivalent for tda 4858 ic free transistor equivalent book STD-80 4856 a 14 PIN DIP W908 LSI CMOS Technology
    Text: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior


    Original
    PDF STD80/STDM80 notice10. TDA 7378 TDA 7822 block diagram baugh-wooley multiplier tda 12062 equivalent for tda 4858 ic free transistor equivalent book STD-80 4856 a 14 PIN DIP W908 LSI CMOS Technology

    FD2S

    Abstract: STD80 74XX STDL80 STDM80 half adder 74xx FD1S IVCD11 transistor 131 74xx ttl
    Text: Intrduction to STD80/STDM80 1 Table of Contents Library Description. 1-1 Features. 1-1


    Original
    PDF STD80/STDM80 FD2S STD80 74XX STDL80 STDM80 half adder 74xx FD1S IVCD11 transistor 131 74xx ttl

    FD2S

    Abstract: ix 3368 AO222 chapter 4 AO333 STD80 STDM80 jtag samsung FD6S samsung 649
    Text: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior


    Original
    PDF STD80/STDM80 P1149 FD2S ix 3368 AO222 chapter 4 AO333 STD80 STDM80 jtag samsung FD6S samsung 649

    STD80

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS OUTPUT DRIVE CAPABILITIES OUTPUT DRIVE CAPABILITIES IV Characteristics VDD = 5V, TA = 25°C, Typical Process IOH [mA] IOL [mA] 157 150 POB24 125 185 175 POB24 150 POB20 125 POB16 POB20 100 POB16 100 POB12 75 POB12 50 75 POB8 POB4


    Original
    PDF POB20 POB24 POB16 POB12 PLOB16 STD80

    Untitled

    Abstract: No abstract text available
    Text: ASIC PRODUCTS FUNCTION GUIDE 2. CMOS STANDARD CELL STD80/STDM80/STDL80 Product Specification STD80 Series STDM80 Process tech noo gy STDL80 0.5 /m HCMOS double-/triple-layer metal Gate delay 0.18ns 0.25ns 0.20ns 5V 3.3V 3.0V 3.3V(3.0V) 5V-to-3.3V 3.3V-ÍO-5V


    OCR Scan
    PDF STD80/STDM80/STDL80 STD80 STDM80 STDL80

    74152 PIN DIAGRAM

    Abstract: application of ic 74153 A022A 74373 verilog 74373 cmos dual s-r latch 74240T LN 741 T749
    Text: KGL80 ^ ^ ^ ^ ^ ^ ^ ^ jE L E C T R O N i Gate Array Library 0.5um 3.3V CMOS Process PRELIMINARY Library Description KG L80 is a 0 .5 n m 3 .3 V C M O S gate array library supporting d ouble-layer o r triple-layer metal interconnection options. This process is optim ized for


    OCR Scan
    PDF KGL80 VSS30P VSS50 74152 PIN DIAGRAM application of ic 74153 A022A 74373 verilog 74373 cmos dual s-r latch 74240T LN 741 T749

    8-bit johnson

    Abstract: verilog code for johnson counter 4 to 2 priority encoder modulo 16 johnson counter AD1032 phbx T74153 16 bit ripple adder verilog code for barrel shifter SEC 022D
    Text: KG80/KGM 80 Gate Array Library 0.5nm 5V CMOS Process PRELIMINARY Library Description SEC ASIC offers KG80 5V gate array family and KGM80 3.3 V gate array family. KG80 and KGM80 are 0.5 Am CMOS processes supporting double-layer or triple-layer metal interconnection options.


    OCR Scan
    PDF KG80/KGM KGM80 8-bit johnson verilog code for johnson counter 4 to 2 priority encoder modulo 16 johnson counter AD1032 phbx T74153 16 bit ripple adder verilog code for barrel shifter SEC 022D