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SGS Semiconductor Ltd STD2NC60 N-CHANNEL 600V, 3.3 OHM, 2A POWERMESH II MOSFET Power Field-Effect Transistor, 2A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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STD2NC60 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
STD2NC60		STMicroelectronics	N-CHANNEL 600V 3.3 ? 2A DPAK-IPAK POWERMESH II		Original	PDF
STD2NC60		STMicroelectronics	N-CHANNEL 600V 3.3 ? 2A DPAK-IPAK POWERMESH II MOSFET		Original	PDF
STD2NC60-1		STMicroelectronics	N-CHANNEL 600V 3.3 ? 2A DPAK-IPAK POWERMESH II MOSFET		Original	PDF
STD2NC60-1		STMicroelectronics	N-Channel 600 V-3.3 ohm-2 A IPAK PowerMESH II MOSFET		Original	PDF
STD2NC60T4		STMicroelectronics	N-CHANNEL 600V 3.3 ? 2A DPAK/IPAK POWERMESH II MOSFET		Original	PDF

STD2NC60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
STD2NC60 Abstract: schematic diagram welding device Text: STD2NC60 N-CHANNEL 600V - 3.3Ω - 2A DPAK / IPAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STD2NC60 600V < 3.6Ω 2A TYPICAL RDS(on) = 3.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED	Original	STD2NC60 STD2NC60 schematic diagram welding device	PDF
STD2NC60 Abstract: No abstract text available Text: STD2NC60 N-CHANNEL 600V - 3.3Ω - 2A DPAK / IPAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STD2NC60 600V < 3.6Ω 2A TYPICAL RDS(on) = 3.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED	Original	STD2NC60 STD2NC60	PDF
STD2NC60 Abstract: No abstract text available Text: STD2NC60 N-CHANNEL 600V - 3.3Ω - 2A DPAK / IPAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STD2NC60 600V < 3.6Ω 2A TYPICAL RDS(on) = 3.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED	Original	STD2NC60 STD2NC60	PDF
IPAK Abstract: No abstract text available Text: STD2NC60  N - CHANNEL 600V - 3.3Ω - 2A - IPAK/DPAK PowerMESH ΙΙ MOSFET T YPE STD2NC60 ν ν ν ν ν V DSS R DS on ID 600 V < 3.6 Ω 2 A TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES	Original	STD2NC60 IPAK	PDF
stu9nc80zi Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z Text: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L	Original	STT2PF60L STT3PF30L STT3PF20L STT4NF30L STT1NF100 STT5PF20V STT3PF20V STT5NF20V PowerSO-10, ISOWATT218, stu9nc80zi STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z	PDF
9n90c Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W	Original	2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312	PDF
220v ac to 12V 10A SMPS Abstract: smps 1000W 48V SMPS 1000w smps 500w half bridge 220v ac to 12V 20A SMPS TL431 928 smps 2000W VIPer smps 20w 12V flyback 1000w 500w half bridge smps Text: Switch Mode Power Supplies Discretes & Standard ICs Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Battery Charger and Adapter Front End Inrush PFC * Flyback Pout > 70W STBRXXX Bridge + + AC Post Regulation * TSM10x PWM + CV & CC	Original	TSM10x TSM101 TSM102 TSM103 TSM104 PowerSO-10, Max220, Max247, ISOWATT220, 220v ac to 12V 10A SMPS smps 1000W 48V SMPS 1000w smps 500w half bridge 220v ac to 12V 20A SMPS TL431 928 smps 2000W VIPer smps 20w 12V flyback 1000w 500w half bridge smps	PDF
irf840 power supply Abstract: STP3020L STP38NF06L STP6NB90FP STe30na50 STP4NB90 STN1NB80 IRF740 sT55n STD1NB60 Text: April 2000 TO-220 VDSS RDS on max (V) (Ω) -60 30 34 50 55 60 75 80 100 150 200 250 300 Type ID(cont) DEVICES REPLACED (A) REMARKS 0.2 0.004 0.006 0.0065 0.009 0.01 0.01 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP90NF03L STP70NF3LL STP70NF03L STP60NF03L 12	Original	O-220 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP90NF03L STP70NF3LL STP70NF03L STP60NF03L STP60NE03L-12 STP50NF03L irf840 power supply STP3020L STP38NF06L STP6NB90FP STe30na50 STP4NB90 STN1NB80 IRF740 sT55n STD1NB60	PDF
Complementary MOSFETs buz11 Abstract: IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp Text: POWER MOSFETs IGBTs Selection Guide P T Y U T O F P H E O U Y I O U R E O P L E C N S W H O O N T R O L Y S T E M S IG B Ts IGB Ts Ts IG BTs IG B FEATURE Logic Level Fully Clamped Low Drop Fast Switching Fast Switching + Freewheeling Diode Short Circuit Proof	Original	STGD3NB60S STGD3NB60SD STGD7NB60S STGP10NB60S STGD7NB120S-1 O-220 ISOWATT218, PowerSO-10 Max247 STE180NE10 Complementary MOSFETs buz11 IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp	PDF
BTA12 600V Abstract: scr 600v 12a TO-220 triac 600v. 1a. to 92 diac 30v triac 1200V triac 10A STD25NF20 600v 5A scr diac triac bta08 triac 800V 1A Text: LIGHTING Discretes & Standard ICs Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions STBV68 STBV45 STBV42 STBV32 STX13003 ST13003 BULT118 BULK128D-B BULD1101ET4 STD13003-1 BULD118D-1 BULB39DT4 BULB49DT4 STB13005-1 BUL118 BUL128 BUL128D-B	Original	STBV68 STBV45 STBV42 STBV32 STX13003 ST13003 BULT118 BULK128D-B BULD1101ET4 STD13003-1 BTA12 600V scr 600v 12a TO-220 triac 600v. 1a. to 92 diac 30v triac 1200V triac 10A STD25NF20 600v 5A scr diac triac bta08 triac 800V 1A	PDF
fqp60n06 Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30 Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30	PDF