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    STB5NA50 Price and Stock

    SGS Thomson STB5NA50T4

    MOSFET Transistor, N-Channel, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components STB5NA50T4 7,500
    • 1 $1
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    STMicroelectronics STB5NA50T4

    MOSFET Transistor, N-Channel, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components STB5NA50T4 2,000
    • 1 $1
    • 10 $1
    • 100 $1
    • 1000 $1
    • 10000 $1
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    STB5NA50 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STB5NA50 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STB5NA50 STMicroelectronics N-Channel Enhancement Mode Fast Power MOS Transistor Original PDF
    STB5NA50-1 STMicroelectronics N-Channel Enhancement Mode Fast Power MOS Transistor Original PDF
    STB5NA50T4 STMicroelectronics N-Channel Enhancement Mode Fast Power MOS Transistor Original PDF

    STB5NA50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    18-12 049 transistor

    Abstract: STB5NA50
    Text: STB5NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB5NA50 n n n n n n n n n V DSS R DS on ID 500 V < 1.6 Ω 5 A TYPICAL RDS(on) = 1.2 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES


    Original     		PDF STB5NA50 100oC O-262) O-263) 18-12 049 transistor STB5NA50

    D2PACK

    Abstract: STB5NA50
    Text: STB5NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS on ID STB5NA50 500 V < 1.6 Ω 5A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.2 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STB5NA50 100oC O-262) O-263) O-26er D2PACK STB5NA50

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    SSH6N80

    Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
    Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent

    2sk2365

    Abstract: MTB23P60E TO-263AB 2sk2134 2SJ series NEC 2sJ302 2SJ302 2SK3058-ZJ PHB24N03LT 2SJ328
    Text: N & P CHANNEL HIGH POWER MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 3A TO 60A, AND POWER RATING UP TO 75W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 900V UP TO 100V N & P CHANNEL MOSFETS FUNCTIONAL EQUIVALENTS PART NO BUK464-200A BUK465-200A BUK466-200A


    Original     		PDF 2SK2983-ZJ 2SK2984-ZJ 2SK3056-ZJ 2SK2411-ZJ 2SK2513-ZJ 2SK2499-ZJ 2SK3058-ZJ 2SK3060-ZJ 2SK3062-ZJ 2SJ302-ZJ 2sk2365 MTB23P60E TO-263AB 2sk2134 2SJ series NEC 2sJ302 2SJ302 PHB24N03LT 2SJ328

    C5797

    Abstract: No abstract text available
    Text: Zi! SGS-THOMSON R8D lS S l[LliSTl^©iBOi STB5NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STB5NA 50 dss 500 V R D S (on) < 1.6 0 Id 5 A • ■ . . ■ . . . TYPICAL RDS(on) = 1.2 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED


    OCR Scan     		PDF STB5NA50 O-262) O-263) C5797

    Untitled

    Abstract: No abstract text available
    Text: rz 7 ^ 7# SGS-THOMSON [«o @iiLEeiris®mei S TB 5 N A 50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB5NA50 V dss R dS od Id 500 V < 1.6 n 5 A TYPICAL R d s (o ii) = 1 .2 £1 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STB5NA50 O-262) O-263) O-262 O-263 723SS