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    STMicroelectronics STB30NE06L

    N-CHANNEL 60V, 0.35 OHM, 30A STRIPFET POWER MOSFET Power Field-Effect Transistor, 30A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    STB30NE06L Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STB30NE06L STMicroelectronics N-CHANNEL 60V - 0.35 ? - 30A D2PAK STRIPFET POW Original PDF
    STB30NE06L STMicroelectronics N-CHANNEL 60V - 0.35 ? - 30A D2PAK STRIPFET POWER MOSFET Original PDF
    STB30NE06L STMicroelectronics N - CHANNEL 60V - 0.35 ? - 30A - D 2 PAK STripFET POWER MOSFET Original PDF

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    STB30NE06L

    Abstract: No abstract text available
    Text: STB30NE06L N-CHANNEL 60V - 0.035 Ω - 30A D 2PAK STripFET POWER MOSFET TYPE STB30NE06L VDSS RDS on ID 60 V <0.05 Ω 30 A TYPICAL RDS(on) = 0.035Ω 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT


    Original     		PDF STB30NE06L O-263 STB30NE06L

    STB30NE06L

    Abstract: No abstract text available
    Text: STB30NE06L N-CHANNEL 60V - 0.035 Ω - 30A D 2PAK STripFET POWER MOSFET TYPE STB30NE06L • ■ ■ ■ ■ VDSS RDS on ID 60 V <0.05 Ω 30 A TYPICAL RDS(on) = 0.035Ω 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION


    Original     		PDF STB30NE06L O-263 STB30NE06L

    STB30NE06L

    Abstract: No abstract text available
    Text: STB30NE06L  N - CHANNEL 60V - 0.35Ω - 30A - D2PAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STB30NE06L • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.05 Ω 30 A TYPICAL RDS(on) = 0.035 Ω 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED


    Original     		PDF STB30NE06L O-263 STB30NE06L

    STB30NE06L

    Abstract: No abstract text available
    Text: STB30NE06L N-CHANNEL 60V - 0.35 Ω - 30A D2PAK STripFET POWER MOSFET TYPE STB30NE06L • ■ ■ ■ ■ VDSS RDS on ID 60 V <0.05 Ω 30 A TYPICAL RDS(on) = 0.035Ω 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT


    Original     		PDF STB30NE06L O-263 STB30NE06L

    Untitled

    Abstract: No abstract text available
    Text: STB30NE06L N - CHANNEL 60V - 0.35H - 30A - D^PAK _STripFET POWER MOSFET PRELIMINARY DATA TYPE STB30N E06L V dss R dS oii Id 60 V < 0.05 Q. 30 A . • TYPICAL R D S (on) = 0.035 100% AVALANCHE TESTED . LOW GATE CHARGE 100 °C . APPLICATION ORIENTED


    OCR Scan     		PDF STB30NE06L STB30N O-263 P011P6/E