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    STATIC TRANSFER SWITCHING Search Results

    STATIC TRANSFER SWITCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation

    STATIC TRANSFER SWITCHING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IW4034BDW

    Abstract: IW4034BN
    Text: IW4034B 8-STAGE STATIC BIDIRECTIONAL PARALLEL/ SERIAL INPUT/OUTPUT BUS REGISTER High-Voltage Silicon-Gate CMOS The IW4034B is a static eight-stage parallel-or serial-input parallel-output register. It can be used to: 1 bidirectionally transfer parallel information between two


    Original     		PDF IW4034B IW4034B IW4034BDW IW4034BN

    SL4034B

    Abstract: SL4034BD
    Text: SL4034B 8-Stage Static Bidirectional Parallel/ Serial Input/Output Bus Register High-Voltage Silicon-Gate CMOS The SL4034B is a static eight-stage parallel-or serial-input paralleloutput register. It can be used to: 1 bidirectionally transfer parallel information between two buses, 2)


    Original     		PDF SL4034B SL4034B SL4034BD

    KK4034B

    Abstract: KK4034BDW
    Text: TECHNICAL DATA KK4034B 8-Stage Static Bidirectional Parallel/ Serial Input/Output Bus Register High-Voltage Silicon-Gate CMOS The KK4034B is a static eight-stage parallel-or serial-input paralleloutput register. It can be used to: 1 bidirectionally transfer parallel information between two buses, 2)


    Original     		PDF KK4034B KK4034B -BUSKK4034BN 013AD) KK4034BDW

    IW4034BN

    Abstract: No abstract text available
    Text: TECHNICAL DATA IW4034B 8-Stage Static Bidirectional Parallel/ Serial Input/Output Bus Register High-Voltage Silicon-Gate CMOS The IW4034B is a static eight-stage parallel-or serial-input parallel-output register. It can be used to: 1 bidirectionally transfer parallel information between two buses,


    Original     		PDF IW4034B IW4034B IW4034BN BIW4034BDW

    IW4034BDW

    Abstract: No abstract text available
    Text: TECHNICAL DATA IW4034B 8-Stage Static Bidirectional Parallel/ Serial Input/Output Bus Register High-Voltage Silicon-Gate CMOS The IW4034B is a static eight-stage parallel-or serial-input paralleloutput register. It can be used to: 1 bidirectionally transfer parallel information between two buses, 2)


    Original     		PDF IW4034B IW4034B -BUSIW4034BN 013AD) IW4034BDW

    ZTX605

    Abstract: 100 amp npn darlington power transistors ZTX604 DSA003770
    Text: ZTX604 ZTX605 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL ZTX604 MIN. Static Forward hFE Current Transfer Ratio 2K 5K 2K 0.5K Transition Frequency fT 150 Input Capacitance Cibo Output Capacitance Cobo Switching Times


    Original     		PDF ZTX604 ZTX605 500mA, 100mA, 20MHz 500mV, 100ms ZTX605 100 amp npn darlington power transistors ZTX604 DSA003770

    ztx603

    Abstract: No abstract text available
    Text: ZTX602 Not Recommended for New Design Please Use ZTX603 ZTX602 ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE Transition Frequency fT


    Original     		PDF ZTX602 ZTX603 ZTX603 100ms ZTX602

    ZTX958

    Abstract: TO-1 amps pnp transistor transistor 3330 DSA003780
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. Static Forward Current Transfer Ratio hFE Transition Frequency fT 85 Output Capacitance Cobo


    Original     		PDF ZTX958 -500mA, -10mA, -50mA -100V -100mA, 50MHz ZTX958 TO-1 amps pnp transistor transistor 3330 DSA003780

    ZTX855

    Abstract: VCB-200V DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 0.88 1 V IC=4A, VCE=5V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


    Original     		PDF ZTX855 100mA, 50MHz 100mA Am100 100ms ZTX855 VCB-200V DSA003778

    ZTX849

    Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR DSA003777
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX849 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 850 950 mV IC=5A, VCE=1V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX849 100mA, 50MHz 100mA 100ms ZTX849 NPN 200 VOLTS 20 Amps POWER TRANSISTOR DSA003777

    ZTX857

    Abstract: 300V transistor npn 2a DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX857 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 810 950 mV IC=2A, VCE=5V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX857 100mA, 100MHz 250mA, 500mA, 100ms ZTX857 300V transistor npn 2a DSA003778

    DARLINGTON 1A 60V npn to92

    Abstract: ZTX602 ZTX603 DSA003770
    Text: ZTX602 ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL hFE Static Forward Current Transfer Ratio ZTX602 MIN. MAX. MIN. 2K 5K 2K 0.5K 2K 5K 2K 0.5K 100K 150


    Original     		PDF ZTX602 ZTX603 500mA, 100mA, 20MHz DARLINGTON 1A 60V npn to92 ZTX602 ZTX603 DSA003770

    ZTX869

    Abstract: PS 307 5A DSA003778
    Text: ZTX869 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 800 900 mV IC=5A, VCE=1V* NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


    Original     		PDF ZTX869 100mA, 50MHz 100mA 100ms ZTX869 PS 307 5A DSA003778

    ZTX853

    Abstract: DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 830 950 V IC=4A, VCE=2V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


    Original     		PDF ZTX853 100mA, 50MHz 100mA 100ms ZTX853 DSA003778

    ZTX956

    Abstract: DSA003780
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -770 -900 mV IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX956 -100mA, 50MHz -100mA 100mA, -10mA, 100ms ZTX956 DSA003780

    ZTX957

    Abstract: TO-1 amps pnp transistor DSA003780
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -710 -850 mV IC=-1A, VCE=-10V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX957 -100mA, 50MHz -500mA, -50mA -100V -10mA, 100ms ZTX957 TO-1 amps pnp transistor DSA003780

    ZTX955

    Abstract: DSA003780
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX955 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -790 -900 mV IC=-3A, VCE=-5V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX955 -100mA, 50MHz -100mA 100mA, -10mA, 100ms ZTX955 DSA003780

    ZTX851

    Abstract: DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX851 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 840 950 mV IC=4A, VCE=1V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


    Original     		PDF ZTX851 100mA, 50MHz 100mA 100ms ZTX851 DSA003778

    ZTX601

    Abstract: No abstract text available
    Text: ZTX600 Not Recommended for New Design Please Use ZTX601 ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K


    Original     		PDF ZTX600 ZTX601 ZTX601 ZTX600 100ms

    ZTX605

    Abstract: No abstract text available
    Text: ZTX604 Not Recommended for New Design Please Use ZTX605 ZTX604 ZTX605 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL ZTX604 MIN. Static Forward hFE Current Transfer Ratio 2K 5K 2K 0.5K Transition Frequency fT 150 Input Capacitance


    Original     		PDF ZTX604 ZTX605 100ms ZTX605

    ZTX949

    Abstract: DSA003779
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX949 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -860 -1000 mV IC=-5A, VCE=-1V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX949 -100mA, 50MHz -400mA 400mA, -10mA, 100ms ZTX949 DSA003779

    ztx953

    Abstract: IN 3319 B DSA003779
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX953 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer hFE MIN. TYP. MAX. UNIT CONDITIONS. -880 -1100 mV IC=-4A, VCE=-1V*


    Original     		PDF ZTX953 -10mA, 100ms ztx953 IN 3319 B DSA003779

    ZTX948

    Abstract: DSA003779
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE MIN. TYP. MAX. UNIT CONDITIONS. -860 -1000 mV IC=-5A, VCE=-1V*


    Original     		PDF ZTX948 -10mA, -100mA, 50MHz -400mA 400mA, 100ms ZTX948 DSA003779

    ZTX705

    Abstract: ZTX704 DSA003774
    Text: ZTX704 ZTX705 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . PARAMETER SYMBOL ZTX704 MIN. ZTX705 MAX. MIN. 3K 3K 3K 2K UNIT CONDITIONS. MAX. IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio hFE Transition


    Original     		PDF ZTX704 ZTX705 -10mA, -100mA, 20MHz 100ms ZTX705 ZTX704 DSA003774