constant current constant voltage controller sot23
Abstract: 33xxA High operating temp Photocoupler constant current power supply circuit diagram ST433B ST433 dc constant current power supply
Text: STANSON TECHNOLOGY Constant Voltage and Constant Current Controller ST8433 Pb-Free DESCRIPTION The ST8433 is high-voltage four-terminal adjustable voltage references, with over current protection feature. The ST8433 is a one chip solution to a 2.5V precision voltage reference
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ST8433
ST8433
O-92-4
100mA
O92-4
constant current constant voltage controller sot23
33xxA
High operating temp Photocoupler
constant current power supply circuit diagram
ST433B
ST433
dc constant current power supply
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MOSFET 20V 80A
Abstract: STN410D MOSFET, Enhancement, N Channel, 30V
Text: STN4 10 STN410 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN410D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the overall efficiency of DC/DC converters using
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STN410
STN410D
O-252
O-251
O-252
MOSFET 20V 80A
MOSFET, Enhancement, N Channel, 30V
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STP413D
Abstract: TO-252 MOSFET p channel p channel enhancement mosfet P channel MOSFET 10A 115td MOSFET 20V 120A p channel power trench mosfet uis test p channel mosfet 10a 20v STP41
Text: STP413D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP413D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either
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STP413D
STP413D
O-252
O-251
-40V/-12
-40V/-8
O-252
O-251ancement
TO-252 MOSFET p channel
p channel enhancement mosfet
P channel MOSFET 10A
115td
MOSFET 20V 120A
p channel power trench mosfet
uis test
p channel mosfet 10a 20v
STP41
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STN454D
Abstract: 100A Mosfet Stanson Technology STN454 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR uis test APD50 MOSFET 20V 100A MOSFET 20V 120A 5025W
Text: STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using
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STN454D
STN454D
O-252
O-251
0V/12
O-252
O-252-2L
100A Mosfet
Stanson Technology
STN454
n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
uis test
APD50
MOSFET 20V 100A
MOSFET 20V 120A
5025W
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: SOP8 mos n Mos MARKING CODE 24V 1A mosfet 25NC12 STC4539 N and P MOSFET
Text: STC4539 N&P Pair Enhancement Mode MOSFET 6.8A / -6.2A DESCRIPTION The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
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STC4539
STC4539
-30V/-6
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
SOP8 mos n
Mos MARKING CODE
24V 1A mosfet
25NC12
N and P MOSFET
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STC4614
Abstract: P channel MOSFET 10A MOSFET 10A AIDM-25 stc46 N and P MOSFET
Text: 614 STC4 STC4614 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching
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STC4614
STC4614
0V/10A,
VTC4614
P channel MOSFET 10A
MOSFET 10A
AIDM-25
stc46
N and P MOSFET
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STC4606
Abstract: No abstract text available
Text: STC4606 N&P Pair Enhancement Mode MOSFET 6.5A / -6.9A DESCRIPTION The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
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STC4606
STC4606
-30V/-6
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marking sop-8
Abstract: STN4920 MOSFET dual SOP-8 Dual N-Channel MOSFET SOP8 channel mosfet sop_8 Stanson Technology diode 72A marking 30 dual mosfet 10 35 SOP DIODE
Text: STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered
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STN4920
STN4920
STN4920S8RG
STN4920S8TG
marking sop-8
MOSFET dual SOP-8
Dual N-Channel MOSFET SOP8
channel mosfet sop_8
Stanson Technology
diode 72A
marking 30 dual mosfet
10 35 SOP DIODE
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Untitled
Abstract: No abstract text available
Text: STN4186D N Channel Enhancement Mode MOSFET 35.0A DESCRIPTION STN4186D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using
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STN4186D
STN4186D
STN454D
O-252
O-251
0V/20
0V/15
O-252
O-251
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Untitled
Abstract: No abstract text available
Text: STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using
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STN454D
STN454D
O-252
O-251
0V/12
O-252
O-251
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Untitled
Abstract: No abstract text available
Text: ST75N75 N Channel Enhancement Mode MOSFET 75.0A DESCRIPTION ST75N75 is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO220-3L FEATURE 75V/40.0A, RDS(ON) = 8mΩ (Typ.)
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ST75N75
ST75N75
O220-3L
5V/40
O-220
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Untitled
Abstract: No abstract text available
Text: STN410D N Channel Enhancement Mode MOSFET 15.0A DESCRIPTION STN410D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the overall efficiency of DC/DC converters using
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STN410D
STN410D
O-252
O-251
O-252
O-251
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Untitled
Abstract: No abstract text available
Text: STP413D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP413D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either
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STP413D
STP413D
O-252
O-251
-40V/-12
-40V/-8
O-252-2L
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STN*4440
Abstract: STN4440
Text: STN4440 N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN4440
STN4440
0V/10
STN*4440
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ST16N10
Abstract: 16N10 n channel enhancement MOSFET n channel Stanson Technology MOSFET MARKING ST st 16n10 DSA001077 mosfet low idss TO-251 Package
Text: ST 16N10 ST16N10 N Channel Enhancement Mode MOSFET 16.0A DESCRIPTION ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using
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ST16N10
ST16N10
O-252
O-251
O-252
O-251
16N10
n channel enhancement MOSFET
n channel
Stanson Technology
MOSFET MARKING ST
st 16n10
DSA001077
mosfet low idss
TO-251 Package
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MOSFET 30v sop-8
Abstract: STN4412 diode 68A transistor 8P Package Marking 8A STN44
Text: STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN4412
STN4412
MOSFET 30v sop-8
diode 68A
transistor 8P
Package Marking 8A
STN44
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P channel MOSFET 10A
Abstract: STP4435A MOSFET 10A
Text: STP4435A P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STP4435A
STP4435A
-30V/-9
-30V/-7
P channel MOSFET 10A
MOSFET 10A
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Stanson Technology
Abstract: TH 9437 P channel MOSFET 1A MOSFET 30v sop-8
Text: P943 7 ST STP 9437 P Channel Enhancement Mode MOSFET - 5.7A DESCRIPTION STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STP9437
STP9437
-30V/-5
-30V/-4
Stanson Technology
TH 9437
P channel MOSFET 1A
MOSFET 30v sop-8
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STC6614
Abstract: No abstract text available
Text: STC6614 N&P Pair Enhancement Mode MOSFET 7.0A / -5.0A DESCRIPTION The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
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STC6614
STC6614
-60V/-5
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STP4803
Abstract: STP48 MOSFET 30v sop-8 marking 52A MOSFET dual SOP-8
Text: STP4803 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STP4803
STP4803
-30V/-5
-30V/-4
STP48
MOSFET 30v sop-8
marking 52A
MOSFET dual SOP-8
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STN442D
Abstract: STN442 370A Stanson Technology STN44 VIEW 48v mosfet switch bentley
Text: STN4 42 D STN442 42D N Channel Enhancement Mode MOSFET 37.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) FEATURE
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STN442D
STN442
STN442D
O-252
O-251
0V/20
O-252
O-251
STN442
370A
Stanson Technology
STN44
VIEW
48v mosfet switch
bentley
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Untitled
Abstract: No abstract text available
Text: ST47P06D P Channel Enhancement Mode MOSFET -47.0A DESCRIPTION ST47P06D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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ST47P06D
ST47P06D
-60V/-24A,
-60V/-10A,
O-220
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STP4189D
Abstract: No abstract text available
Text: STP4189D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP4189D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using
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STP4189D
STP4189D
STP413D
O-252
O-251
-40V/-12
-40V/-8
O-252
O-251
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SOT 363 NP
Abstract: stc633 STC6332 SC-70-6L 1a sop 6332 N and P MOSFET
Text: 6332 STC STC6332 N&P Pair Enhancement Mode MOSFET 0.95A / -1A DESCRIPTION The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching
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STC6332
STC6332
OT-363/SC-70-6L
SOT 363 NP
stc633
SC-70-6L
1a sop
6332
N and P MOSFET
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