STN442
Abstract: STN44 Stanson Technology MOSFET 20V 80A
Text: 26 STN44 STN442 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN4426
STN442
STN4426
STN442
STN44
Stanson Technology
MOSFET 20V 80A
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STN442D
Abstract: STN442 370A Stanson Technology STN44 VIEW 48v mosfet switch bentley
Text: STN4 42 D STN442 42D N Channel Enhancement Mode MOSFET 37.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) FEATURE
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STN442D
STN442
STN442D
O-252
O-251
0V/20
O-252
O-251
STN442
370A
Stanson Technology
STN44
VIEW
48v mosfet switch
bentley
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Untitled
Abstract: No abstract text available
Text: STN442D N Channel Enhancement Mode MOSFET 27.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE
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STN442D
STN442D
O-252
O-251
0V/20
O-252
O-251
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