Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ST2318SRG Search Results

    ST2318SRG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		PDF ST2318SRG ST2318SRG OT-23 OT-23

    N mosfet sot-23

    Abstract: sot-23 MARKING CODE 23A marking sot-23
    Text: ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		PDF ST2318SRG ST2318SRG OT-23 OT-23 N mosfet sot-23 sot-23 MARKING CODE 23A marking sot-23