QPB704
Abstract: No abstract text available
Text: EO REFLECTIVE OBJECT SENSORS OPTOELECTRONICS OPB703/OPB704/QPB705 .420 10.67 — Th e O P B 703, O P B 704, and O P B 705 consist of an -.3 2 8 (8.33) infrared em itting diode and an NPN silicon .025 (0.64), II phototransistor m ounted side by side on a converging
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OPB703/OPB704/QPB705
7Mbbfl51
QPB704
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OPB704
Abstract: OPB703 QPB704
Text: REFLECTIVE OBJECT SENSORS OPTOELECTRONICS OPB7Q3/OPB704/OPB705 PACKAGE .420 10.67 — -.3 2 8 (8.33) .025 (0.64), -.0 6 2 (1 .57 ) R NOM .015(0.38)' 4P LC S r .226 (5.74) J. .150 (3.81) MIN .300 (7.62)— REFLECTIVE SURFACE .150(3.81) NOM FEATUMBS '.603 (15.32)'
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OPB7Q3/OPB704/OPB705
OPB703,
OPB704,
OPB705
OPB703/OPB704/OPB705
OPB704
OPB703
QPB704
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OPB704
Abstract: ST2154 QPB704 OPB703 transistor TIP 328 OPB705
Text: CsO REFLECTIVE OBJECT SENSORS OPTOELECTRONICS OPB703/OPB704/OPB705 DESCRIPTION PACKAGE DIMENSIONS The OPB703, OPB704, and OPB705 consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The
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OPB703/OPB704/OPB705
OPB703
OPB705
QPB704
OPB703,
OPB704,
OPB704
ST2154
QPB704
transistor TIP 328
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