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    ST1603 Price and Stock

    GeneSic Semiconductor Inc FST16035

    DIODE MOD SCHOT 35V 160A TO249AB
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    DigiKey FST16035 Bulk 28 1
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    Newark FST16035 Bulk 80
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    NAC FST16035 40
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    GeneSic Semiconductor Inc FST16030

    DIODE MOD SCHOT 30V 160A TO249AB
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    NAC FST16030 40
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    GeneSic Semiconductor Inc FST16030L

    DIODE MOD SCHOTT 30V 80A TO249AB
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    GeneSic Semiconductor Inc FST16035L

    DIODE MOD SCHOTT 35V 80A TO249AB
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    SMC Corporation of America CNST160-300-D

    POWER LOCK CYLINDER, TIE ROD, CNS SERIES | SMC Corporation CNST160-300-D
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    RS CNST160-300-D Bulk 5 Weeks 1
    • 1 $2722.86
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    ST1603 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED AIGaAS SCHMITT TRIGGER OPTOCOUPLERS OPTOELECTRONICS H11N1 H11N2 H11N3 PACKAGE DIMENSIONS DESCRIPTION The H11N series has a medium-to-high speed integrated circuit detector optically coupled to a gallium-aluminumarsenide infrared emitting diode. The output incorporates


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    PDF H11N1 H11N2 H11N3 ST1603 ST2028 ST2029 ST2030 ST2032

    Untitled

    Abstract: No abstract text available
    Text: PHOTOFET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET


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    PDF H11F1 H11F2 H11F3 ST1603 74bbfl51

    C1847

    Abstract: No abstract text available
    Text: I HIGH-PERFORMANCE AIGaAs PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 I I MCT5210 MCT5211 PACKAGE DIMENSIONS DESCRIPTION The MCT-521X are high performance CMOS/LSTTL logic compatible phototransistor type optically coupled isolator products. They are constructed using a very low


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    PDF MCT5210 MCT5211 MCT-521X MCT-5211 C1850 C1852 74LiLifl51 C1847

    MQC3023

    Abstract: MOC3020 P
    Text: I NON-ZERO-CROSSING TRIACS OPTOELECTRONI CS MOC3020 MOC3Û21 MOC3Q22 MOC3Q23 PACKAGE DIMENSIONS DESCRIPTION The MOC3020, MOC3021, M003022 and MOC3023 are optically isolated triac driver devices. These devices contain a GaAs infrared emitting diode and a light activated silicon bilateral


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    PDF MOC3020 MOC3Q22 MOC3Q23 MOC3020, MOC3021, M003022 MOC3023 E90700 C1712 C1711 MQC3023 MOC3020 P

    Untitled

    Abstract: No abstract text available
    Text: csxa PHOTODARUNGTON OPTOCOUPLERS s m E u m s iic s H11B1 H11B2 H11B3 The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-fine package High current transfer ratio H1181 -500% mtn.


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    PDF H11B1 H11B2 H11B3 H1181 H11B3 E90700 ST1603A H11B1) H11B2)

    Untitled

    Abstract: No abstract text available
    Text: E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N25, 4N26, 4N27, and 4N28 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide diode. t 1 8-3 6.86


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    PDF E90700

    switch H11B

    Abstract: optocouplers H11B1 ST1736 H11B2 H11B ST1723
    Text: PHOTODARLINGTON OPTOCOUPLERS B m E u tm M c s H11B1 H11B2 H11B3 PACKAGE DIMENSIONS E&] DESCRIPTION Si [ft The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodariington transistor in a dual in-line package.


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    PDF H11B1 H11B2 H11B3 H11B3-100 E90700 JI2-54! ST1603A ST1723 switch H11B optocouplers H11B1 ST1736 H11B ST1723

    C1959

    Abstract: C1957 transistor c1959 transistor IN5060 diode C1957 St1602 C1958 c1959 Y transistor transistor c1959 in5060
    Text: [*u PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS 4N394N40 DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES & APPLICATIONS High efficiency, low degradation, liquid epitaxial LED


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    PDF 4N394N40 STI603 ST1602 E90700 Cto150Â Cto100Â Cfor10sec 220VAC ST2118 ST2119 C1959 C1957 transistor c1959 transistor IN5060 diode C1957 St1602 C1958 c1959 Y transistor transistor c1959 in5060

    ST-2124

    Abstract: ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf H11AG1 H11AG2
    Text: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS ft The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device


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    PDF H11AG1 H11AG2 H11AG3 H11AG ST1603A ST-2124 ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf

    M0C3021

    Abstract: MQC3021 MOC3020 applications circuits MQC3023 MQC3022 moc3020 triac driver M003022 MOC3020 MOC3CJ21 ST1603
    Text: E Q NON-ZERO-CROSSING TRIACS OPTDELECIBBHICS MOC3020 M0C3021 MOC3022 MOC3023 DESCRIPTION PACKAGE DIMENSIONS The MOC3020, MQC3021, MQC3022 and MOC3Q23 are optically isolated triac driver devices. These devices contain a GaAs infrared emitting diode and a light activated silicon bilateral


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    PDF MOC3020 M0C3021 M003022 MOC3023 ST1603 C2081 MOC3020, MQC3021, MQC3022 M0C3Q23 MQC3021 MOC3020 applications circuits MQC3023 moc3020 triac driver MOC3CJ21

    C1684 r .85 transistor

    Abstract: 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684
    Text: PHOTOTRANSISTOR OPTOCOUPLERS 0FT8ELECTB0HICS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS “T h e 4N 35,4N 36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS


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    PDF ST1603A C2Q79 E90700 hu1685 C1296A C1S94 VCEat10 C1684 r .85 transistor 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684

    transistor KJJ

    Abstract: C-1248 C1243 C1248 C1250 C2079 MCT210 Phototransistor with base emitter CI242 C1256
    Text: I5 Q PHOTOTRANSISTOR OPTOCOUPLER IPTOELEtTHIIICS MCT 210 DESCRIPTION PACKAGE DIMENSIONS The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.


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    PDF MCT210 MCT210 MCT210â E90700) C1256 transistor KJJ C-1248 C1243 C1248 C1250 C2079 Phototransistor with base emitter CI242 C1256

    transistor c2307

    Abstract: c2307 C2303 C2309 H11AA1 equivalent ST1603 H11AA1 H11AA2 H11AA3 H11AA4
    Text: AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AA1 H11AA3 H11AA2 H11AA4 PACKAGE DIMENSIONS DESCRIPTION The H11AAX family of devices has two GaAs emitters connected in inverse parallel driving a single silicon phototransistor output. FEATURES • Bi-polar emitter input


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    PDF H11AA1 H11AA3 H11AA2 H11AA4 H11AAX E90700) ST1603-02 c2089 C2308 C2307 transistor c2307 C2303 C2309 H11AA1 equivalent ST1603

    Untitled

    Abstract: No abstract text available
    Text: f i PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS II MCT2E PACKAGE DIMENSIONS DESCRIPTION T h e M C T 2E is a NPN silicon planar phototransistor db f i Æ optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS Utility/econom y isolator


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    PDF Vcea110

    cmy17

    Abstract: CHY17f-2 CMY17F-2 CHY17 cmy17f
    Text: [SO PHOTOTRANSISTOR OPTOCOUPLERS 0 F Ï B E L E CIROKiCS CNY17F-1 CMY17F-2 CNY17F-3 DESCRIPTION PACKAGE DIMENSIONS rib rifa T h e CNY17 series consists of a Gallium A rsenide IRED coupled with an N P N phototransistor. FEATURES High isolation voltage 5 3 0 0 VAC R M S — 1 minute


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    PDF CNY17F-1 CMY17F-2 CNY17F-3 CNY17 CNY17F1: CNY17F2: CNY17F3: ST1603A C1680 cmy17 CHY17f-2 CHY17 cmy17f

    K C2026 Y

    Abstract: C2026 Y C2035 740L6000 c2026 c2026 semiconductor c2033 740L6011 C2036 k C2026
    Text: E li HIGH-SPEED LOGIC-TO-LOGIC OPTOCOUPLERS OPTOELECTRONICS OPTO/LOGIC LSTTLto ORDER INFORMATION SYMBOL Buffer Inverter 740L6000 740L6001 740L6010 740L6011 FEATURES LOGIC COMPATIBILITY PART LOGIC OUTPUT NUMBER INPUT OUTPUT FUNCTION CONFIGURATION 740L6000 LSTTL


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    PDF 740L6000 740L6001 740L6010 740L6011 740L6000 740L6001 740L6010 740L6011 K C2026 Y C2026 Y C2035 c2026 c2026 semiconductor c2033 C2036 k C2026

    Untitled

    Abstract: No abstract text available
    Text: K l PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11A1 H11A2 H11A3 H11A4 H11A5 PACKAGE DIMENSIONS DESCRIPTION The H11A series consists of a gallium arsenide infrared emitting diode, coupled with a silicon phototransistor in a dual in-line package. FEATURES


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    PDF H11A1 H11A2 H11A3 H11A4 H11A5 E90700 I2-54! ST1603A C2079 ST1728

    Untitled

    Abstract: No abstract text available
    Text: [£Ö PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONI CS 3 CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSION! DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. WWW High isolation voltage 5300 VAC RMS— 1 m inute


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    PDF CNY17-1 CNY17-3 CNY17-2 CNY17-4 CNY17 CNY17-1: CNY17-2: CNY17-3: CNY17-4: E90700

    GNY17-3

    Abstract: CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor CNY17-2 C1243
    Text: [«51 PHOTOTRANSISTOR OPTOCOUPLERS OPTOE L E CTRONI CS CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSIONS DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. rib rih rSi FEATURES 1.9 TYP ~ ï— 4.06 J twLTI


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    PDF CNY17-1 CNY17-3 CNY17-2 CNY17-4 ST1603A C2079 CNY17 CNY17-1: CNY17-2: CNY17-3: GNY17-3 CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor C1243

    ST2122

    Abstract: H11AG1 H11AG2 H11AG3 GE-MOV 2N4256 C2079 gemov SC160B
    Text: PHOTOTRANSiSTOR OPTOCOUPLERS DPTDELECTBflKICS ._ H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS •The H11AG series consists of a galiium-aluminumarsenide infrared emitting diode coupled with a silicon photoiransistor in a dual in-tine package. This device


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    PDF H11AG1 H11AG2 H11AG3 H11AG ST1603 C2079 3VSVocS10V ol2125 ST2122 GE-MOV 2N4256 gemov SC160B

    Untitled

    Abstract: No abstract text available
    Text: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is


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    PDF TIL111 TIL111 E90700 ST1603A C2079 74bbfi C1684 C1683 C1685 C1294

    Untitled

    Abstract: No abstract text available
    Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 PACKAGE DIMENSIONS DESCRIPTION The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.


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    PDF MCT210 MCT210 MCT210â E90700) 74bbfl51 000bl23 D00L124

    H11F2 equivalent

    Abstract: C4615 H11F H11F1 bv46 8T20 H11F2 H11F3 R200A HIIFI
    Text: PHOTO FET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 PACKAGE DIMENSIONS f l DESCRIPTION The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated


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    PDF H11F1 H11F2 H11F3 ST1603A 100FINE ST2062 ST2063 H11F2 equivalent C4615 H11F bv46 8T20 H11F3 R200A HIIFI

    C1685 transistor

    Abstract: C1684 r .85 transistor C1685 transistor c1684 C1680 C1681 TRANSISTOR C1685 C1679 C1682 C1683
    Text: L y 1 • PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT2 PACKAGE DIMENSIONS DESCRIPTION The MCT2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS AC line/digital logic isolator


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    PDF E90700 ST1603A C2079 C1296A c1294 C1685 transistor C1684 r .85 transistor C1685 transistor c1684 C1680 C1681 TRANSISTOR C1685 C1679 C1682 C1683