Untitled
Abstract: No abstract text available
Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering
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Original
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PDF
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ST1200FXF21
500-V,
000-A
300-V,
200-A
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Press pack IGBT Toshiba
Abstract: press-pack igbt sg6105dz ST1200 TOSHIBA IGBT DATA BOOK Vcc-1500 ST1200FXF21 Diode BY 1200
Text: ST1200FXF21 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel Press Pack IGBT ST1200FXF21 High Power Switching Applications Motor Control Applications Unit: mm • All electric contacts by pressure structure and airtight package · Anti-parallel fast recovery diode in this package
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Original
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PDF
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ST1200FXF21
Press pack IGBT Toshiba
press-pack igbt
sg6105dz
ST1200
TOSHIBA IGBT DATA BOOK
Vcc-1500
ST1200FXF21
Diode BY 1200
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str 6307
Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering
|
Original
|
PDF
|
ST1200FXF21
500-V,
000-A
300-V,
200-A
str 6307
str 6307 datasheet
STR 6307 POWER
sg6105dz
Toshiba IGBT 1200A 3300V
toshiba gto
TOSHIBA IGBT snubber
STR S 6307
toledo
TOSHIBA str module
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Press pack IGBT Toshiba
Abstract: transistor bipolar
Text: ST1200FXF21 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel Press Pack IGBT ST1200FXF21 High Power Switching Applications Motor Control Applications Unit: mm • All electric contacts by pressure structure and airtight package • Anti-parallel fast recovery diode in this package
|
Original
|
PDF
|
ST1200FXF21
Press pack IGBT Toshiba
transistor bipolar
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Press pack IGBT Toshiba
Abstract: No abstract text available
Text: ST1200FXF21 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel Press Pack IGBT ST1200FXF21 High Power Switching Applications Motor Control Applications Unit: mm • All electric contacts by pressure structure and airtight package • Anti-parallel fast recovery diode in this package
|
Original
|
PDF
|
ST1200FXF21
20max
68max
120max
Press pack IGBT Toshiba
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