Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ST NAND DIE Search Results

    ST NAND DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    946HM/C Rochester Electronics LLC 946 - NAND Gate Visit Rochester Electronics LLC Buy
    MC2101F Rochester Electronics LLC MC2101F - Dual NAND Logic Gate Visit Rochester Electronics LLC Buy

    ST NAND DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    toshiba nand tc58

    Abstract: TOSHIBA TC58 TOSHIBA TC58 cmos memory -NAND toshiba nand flash ST NAND TOSHIBA part numbering Toshiba NAND diode m7 toshiba samsung tc58 WSOP48
    Text: AN1839 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a Toshiba device.


    Original     		PDF AN1839 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits toshiba nand tc58 TOSHIBA TC58 TOSHIBA TC58 cmos memory -NAND toshiba nand flash ST NAND TOSHIBA part numbering Toshiba NAND diode m7 toshiba samsung tc58 WSOP48

    Samsung k9f1208u

    Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
    Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.


    Original     		PDF AN1838 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits Samsung k9f1208u SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory

    toshiba nand tc58

    Abstract: toshiba Nand flash toshiba Nand part numbering tc58 flash samsung tc58 Toshiba NAND TOSHIBA TC58 cmos memory -NAND NAND256-A TOSHIBA part numbering VFBGA63
    Text: AN1839 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics Small Page 528 Byte/ 264 Word Page NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a


    Original     		PDF AN1839 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits toshiba nand tc58 toshiba Nand flash toshiba Nand part numbering tc58 flash samsung tc58 Toshiba NAND TOSHIBA TC58 cmos memory -NAND NAND256-A TOSHIBA part numbering VFBGA63

    SAMSUNG NAND FLASH

    Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
    Text: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for


    Original     		PDF AN1838 Byte/264 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits SAMSUNG NAND FLASH Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8

    NAND512-M

    Abstract: BGA149
    Text: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP PRELIMINARY DATA Feature summary • ■ Multi-Chip Packages – 1 die of 256 Mbit, 512 Mbit (x8/ x16) NAND Flash + 1 die of 256 Mbit (x16) SDR


    Original     		PDF NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 256/512Mb x16/x32, TFBGA107 TFBGA149 LFBGA137 NAND512-M BGA149

    BGA bga 10x13

    Abstract: NAND FLASH BGA st nand flash application note BGA137 MCP NAND DDR NAND512-M NAND01G-M NAND256-M NAND256R3M0
    Text: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP PRELIMINARY DATA Feature summary • Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR


    Original     		PDF NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 256/512Mb x16/x32, BGA bga 10x13 NAND FLASH BGA st nand flash application note BGA137 MCP NAND DDR NAND512-M NAND01G-M NAND256-M NAND256R3M0

    TFBGA137

    Abstract: BGA137 BGA bga 10x13 MCP NAND DDR NAND FLASH BGA zc 409 NAND512-M NAND01G-M NAND256-M NAND256R3M0
    Text: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP Features • ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR LPSDRAM


    Original     		PDF NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 256/512Mb x16/x32, TFBGA107 TFBGA149 LFBGA137 TFBGA137 BGA137 BGA bga 10x13 MCP NAND DDR NAND FLASH BGA zc 409 NAND512-M NAND01G-M NAND256-M NAND256R3M0

    BGA149

    Abstract: TFBGA149 BGA107
    Text: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP PRELIMINARY DATA Feature summary • ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR


    Original     		PDF NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 256/512Mb x16/x32, TFBGA107 TFBGA149 BGA149 BGA107

    block code error management, verilog source code

    Abstract: NAND01GW3A2B-KGD NAND01GW4A2B-KGD NAND01GWxA2B-KGD
    Text: NAND01GW3A2B-KGD NAND01GW4A2B-KGD Known Good Die, 1Gbit x8/x16 , 528 Byte/264 Word Page, 3V, NAND Flash Memory Features • High density NAND Flash memory – 1 Gbit memory array – 32 Mbit spare area – Cost effective solutions for mass storage applications


    Original     		PDF NAND01GW3A2B-KGD NAND01GW4A2B-KGD x8/x16) Byte/264 block code error management, verilog source code NAND01GW3A2B-KGD NAND01GW4A2B-KGD NAND01GWxA2B-KGD

    AI07587

    Abstract: No abstract text available
    Text: NAND01GW3A2B-KGD NAND01GW4A2B-KGD Known Good Die, 1Gbit x8/x16 , 528 Byte/264 Word Page, 3V, NAND Flash Memory Preliminary Data Features • High density NAND Flash memory – 1 Gbit memory array – 32 Mbit spare area – Cost effective solutions for mass storage


    Original     		PDF NAND01GW3A2B-KGD NAND01GW4A2B-KGD x8/x16) Byte/264 AI07587

    HY27UU088G5M

    Abstract: HY27UT084G2M 29f8g08 29F2G08 HY27UG084G2M HY27UH088G2M TH58NVG*D hy27ug082g2m Micron 29F4G08BA HY27UU088
    Text: ST72681 USB 2.0 HIGH-SPEED FLASH DRIVE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ USB 2.0 Interface compatible with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – Suspend and Resume operations Mass Storage Controller Interface MSCI


    Original     		PDF ST72681 512-byte 12MB/s HY27UU088G5M HY27UT084G2M 29f8g08 29F2G08 HY27UG084G2M HY27UH088G2M TH58NVG*D hy27ug082g2m Micron 29F4G08BA HY27UU088

    Untitled

    Abstract: No abstract text available
    Text: ST72682 USB 2.0 HIGH-SPEED FLASH DRIVE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ USB 2.0 Interface compatible with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – Suspend and Resume operations Mass Storage Controller Interface MSCI


    Original     		PDF ST72682 512-byte 21MB/s 11MB/s 100mA ST72682/R20 ST72682

    HY27UU088G5M

    Abstract: HY27UT084G2M HY27UG084G2M HY27UH088G2M 9033 transistor hynix HY27UH088G2M K9F1G08U 29F4G08BA 29f8g08 29f4g08
    Text: ST72681 USB 2.0 HIGH-SPEED FLASH DRIVE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ USB 2.0 Interface compatible with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – Suspend and Resume operations Mass Storage Controller Interface MSCI


    Original     		PDF ST72681 512-byte 12MB/s ST72681/R12 ST72681 HY27UU088G5M HY27UT084G2M HY27UG084G2M HY27UH088G2M 9033 transistor hynix HY27UH088G2M K9F1G08U 29F4G08BA 29f8g08 29f4g08

    HY27UU088G5M

    Abstract: HY27UT084G2M 29F2G08 HY27UT08 29f8g08 micron 29F2G08AA 29f4g08 HY27UG084G2M HY27UH088G2M hy27uu
    Text: ST72682 USB 2.0 high-speed Flash drive controller Features • ■ USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY – Supports USB high speed and full speed – Suspend and Resume operations Mass storage controller interface MSCI


    Original     		PDF ST72682 LQFP64 10x10 512-byte HY27UU088G5M HY27UT084G2M 29F2G08 HY27UT08 29f8g08 micron 29F2G08AA 29f4g08 HY27UG084G2M HY27UH088G2M hy27uu

    HY27Uu088G5M

    Abstract: HY27UT084G2M 29f8g08 HY27UG084G2M HY27UH088G2M 29F2G08 SERVICE MANUAL tv samsung micron 29F2G08AA TH58NVG*D hynix nand
    Text: ST72681 USB 2.0 high-speed Flash drive controller Features • USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHYSupports USB high speed and full speed – Suspend and Resume operations TQFP48 7x7 ■ Clock management – Integrated PLL for generating core and


    Original     		PDF ST72681 TQFP48 HY27Uu088G5M HY27UT084G2M 29f8g08 HY27UG084G2M HY27UH088G2M 29F2G08 SERVICE MANUAL tv samsung micron 29F2G08AA TH58NVG*D hynix nand

    msci 12000

    Abstract: st7268 ndk crystal schematics nand flash controller
    Text: ST72681 USB 2.0 HIGH-SPEED FLASH DRIVE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ ■ USB 2.0 Interface compatible with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – Suspend and Resume operations Mass Storage Controller Interface MSCI


    Original     		PDF ST72681 512-byte 11MB/s 100mA msci 12000 st7268 ndk crystal schematics nand flash controller

    29F2G08

    Abstract: micron 29F2G08AA 29F2G08AA TH58NVG2S3 micron 29F2G08 TC58DVG14B1FT00 TC58DVG04B1FT00 part number decoder toshiba NAND Flash MLC reset nand flash HYNIX hynix 8mb nand flash memory
    Text: ST72681 USB 2.0 HIGH-SPEED 8-BIT MCU FLASH DRIVE CONTROLLER PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ USB 2.0 Interface compatible with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – Suspend and Resume operations


    Original     		PDF ST72681 512-byte 10MB/s 29F2G08 micron 29F2G08AA 29F2G08AA TH58NVG2S3 micron 29F2G08 TC58DVG14B1FT00 TC58DVG04B1FT00 part number decoder toshiba NAND Flash MLC reset nand flash HYNIX hynix 8mb nand flash memory

    HY27Uu088G5m

    Abstract: HY27UT084G2M 29f8g08 29F2G08 HY27UT0 HY27UU08 NDK America HY27UG084G2M HY27UT08 TH58NVG*D
    Text: ST72682 USB 2.0 high-speed Flash drive controller Not For New Design Features • ■ USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY – Supports USB high speed and full speed – Suspend and Resume operations LQFP64 10x10


    Original     		PDF ST72682 LQFP64 10x10 512-byte HY27Uu088G5m HY27UT084G2M 29f8g08 29F2G08 HY27UT0 HY27UU08 NDK America HY27UG084G2M HY27UT08 TH58NVG*D

    HY27UU088G5M

    Abstract: HY27UT084G2M 29f8g08 HY27UH088G2M 29F2G08 HY27UT micron 29F2G08AA HY27UT08 HY27UG084G2M hy27uu
    Text: ST72681 USB 2.0 high-speed Flash drive controller Not For New Design Features • USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY supporting USB high speed and full speed – Suspend and Resume operations LQFP48 7x7 ■


    Original     		PDF ST72681 LQFP48 HY27UU088G5M HY27UT084G2M 29f8g08 HY27UH088G2M 29F2G08 HY27UT micron 29F2G08AA HY27UT08 HY27UG084G2M hy27uu

    Untitled

    Abstract: No abstract text available
    Text: ST72681 USB 2.0 high-speed Flash drive controller Not For New Design Features • USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY supporting USB high speed and full speed – Suspend and Resume operations LQFP48 7x7 ■


    Original     		PDF ST72681 LQFP48

    29F2G08

    Abstract: HY27Uu088G5m 29f8g08 HY27UT084G2M 29F2G08A HY27Uu08 HY27UU088 29f4g08 hy27uu TH58NVG*D
    Text: ST72682 USB 2.0 high-speed Flash drive controller Not For New Design Features • ■ USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY – Supports USB high speed and full speed – Suspend and Resume operations LQFP64 10x10


    Original     		PDF ST72682 LQFP64 10x10 512-byte 29F2G08 HY27Uu088G5m 29f8g08 HY27UT084G2M 29F2G08A HY27Uu08 HY27UU088 29f4g08 hy27uu TH58NVG*D

    sony lcd tv circuit diagram free

    Abstract: LCD TV column driver IC Large Panels mobile color LCD DISPLAY PINOUT 1 to 2 MIPI buffer IC circuit diagram bluetooth camera transmitter smia ccd IMAGE SENSOR global shutter NAND Flash Memory sony camera pinout MIPI DPI TFT circuit diagram 16bit 1,66"
    Text: STn8815S22 STn8815 mobile multimedia application processor with 1-Gbit NAND-Flash and 2x512-Mbit DDR mobile RAM Data Brief Nomadik is a registered trademark of STMicroelectronics Features Description • Unique combination of system-on-chip and memories in a single package


    Original     		PDF STn8815S22 STn8815 2x512-Mbit STn8815S22 512-Mbit sony lcd tv circuit diagram free LCD TV column driver IC Large Panels mobile color LCD DISPLAY PINOUT 1 to 2 MIPI buffer IC circuit diagram bluetooth camera transmitter smia ccd IMAGE SENSOR global shutter NAND Flash Memory sony camera pinout MIPI DPI TFT circuit diagram 16bit 1,66"

    Untitled

    Abstract: No abstract text available
    Text: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current


    Original     		PDF HCC4000B 100nA 0-15V 100kRad 11rad/sec 72MeV/cm HCC4069UBD HCC4069U 4000B

    Untitled

    Abstract: No abstract text available
    Text: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current


    Original     		PDF HCC4000B 100nA 0-15V 100kRad 11rad/sec 72MeV/cm marki/13 HCC4034BD HCC4034