MB84VF5F5F5J2-70
Abstract: MBM29DL64DF
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
|
Original
|
PDF
|
F0302
MB84VF5F5F5J2-70
MBM29DL64DF
|
BGA676
Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
Text: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18
|
Original
|
PDF
|
BGA16A1ATTERNS
BGA676
BGA665
BGA-1156
156 QFN 12X12
LGA240
BGA-783
BGA441
BGA1024
BGA1521
7286X
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50402-1E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F5F4J2-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V
|
Original
|
PDF
|
DS05-50402-1E
MB84VF5F5F4J2-70
107-ball
|
MB84VF5F5F4J2-70
Abstract: MBM29DL64DF
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50402-2E 3 Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F5F4J2-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V
|
Original
|
PDF
|
DS05-50402-2E
MB84VF5F5F4J2-70
107-ball
F0302
MB84VF5F5F4J2-70
MBM29DL64DF
|
50501
Abstract: MB84VZ064D-70 MBM29DL64DF
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50501-1E 4 Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM & SRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAMTM & 8M (×16) STATIC RAM MB84VZ064D-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V
|
Original
|
PDF
|
DS05-50501-1E
MB84VZ064D-70
107-ball
F0302
50501
MB84VZ064D-70
MBM29DL64DF
|
107-pin
Abstract: 4kw marking
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.4E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F4F4J1-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance
|
Original
|
PDF
|
MB84VF5F4F4J1-70
107-ball
107-pin
4kw marking
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F4F4J2-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance
|
Original
|
PDF
|
MB84VF5F4F4J2-70
107-ball
|
4kw marking
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.4E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F5F4J2-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance
|
Original
|
PDF
|
MB84VF5F5F4J2-70
107-ball
4kw marking
|
BGA149
Abstract: TFBGA149 BGA107
Text: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP PRELIMINARY DATA Feature summary • ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR
|
Original
|
PDF
|
NAND256-M
NAND512-M,
NAND01G-M
256/512Mb/1Gb
x8/x16,
256/512Mb
x16/x32,
TFBGA107
TFBGA149
BGA149
BGA107
|
Untitled
Abstract: No abstract text available
Text: MB84VF5F5F4J2-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
|
Original
|
PDF
|
MB84VF5F5F4J2-70
F0302
|
4kw marking
Abstract: MB84VF5F4F4J1-70 MBM29DL64DF
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
|
Original
|
PDF
|
F0302
4kw marking
MB84VF5F4F4J1-70
MBM29DL64DF
|
107-pin
Abstract: FCRAM MBM29DL64DF
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAM TM MB84VF5F4F5J1-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance
|
Original
|
PDF
|
MB84VF5F4F5J1-70
107-ball
107-pin
FCRAM
MBM29DL64DF
|
4kw marking
Abstract: MB84VF5F4F4J1-70 MBM29DL64DF
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50403-1E 3 Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F4F4J1-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V
|
Original
|
PDF
|
DS05-50403-1E
MB84VF5F4F4J1-70
107-ball
65for
F0302
4kw marking
MB84VF5F4F4J1-70
MBM29DL64DF
|
MARKING HRA
Abstract: 4kw marking diode F4 4e
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.4E 4Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM & SRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAMTM & 8M (×16) STATIC RAM MB84VZ064G-70 • FEATURES • Power Supply Voltage of 2.7 to 3.1V
|
Original
|
PDF
|
MB84VZ064G-70
107-ball
MARKING HRA
4kw marking
diode F4 4e
|
|
|
MARKING HRA
Abstract: 4kw marking
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.4E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAM TM MB84VF5F5F5J2-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance
|
Original
|
PDF
|
MB84VF5F5F5J2-70
107-ball
MARKING HRA
4kw marking
|
TFBGA137
Abstract: BGA137 BGA bga 10x13 MCP NAND DDR NAND FLASH BGA zc 409 NAND512-M NAND01G-M NAND256-M NAND256R3M0
Text: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP Features • ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR LPSDRAM
|
Original
|
PDF
|
NAND256-M
NAND512-M,
NAND01G-M
256/512Mb/1Gb
x8/x16,
256/512Mb
x16/x32,
TFBGA107
TFBGA149
LFBGA137
TFBGA137
BGA137
BGA bga 10x13
MCP NAND DDR
NAND FLASH BGA
zc 409
NAND512-M
NAND01G-M
NAND256-M
NAND256R3M0
|
Untitled
Abstract: No abstract text available
Text: MB84VF5F4F4J1-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
|
Original
|
PDF
|
MB84VF5F4F4J1-70
F0302
|
MB84VF5F5F4J2-70
Abstract: MBM29DL64DF
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
|
Original
|
PDF
|
F0302
MB84VF5F5F4J2-70
MBM29DL64DF
|
MB84VF5F5F5J2-70
Abstract: MBM29DL64DF s64M
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50401-1E 3 Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAM TM MB84VF5F5F5J2-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V
|
Original
|
PDF
|
DS05-50401-1E
MB84VF5F5F5J2-70
107-ball
F0302
MB84VF5F5F5J2-70
MBM29DL64DF
s64M
|
mcp 107-ball 13
Abstract: MB84VZ064G-70 MBM29DL64DF
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
|
Original
|
PDF
|
F0302
mcp 107-ball 13
MB84VZ064G-70
MBM29DL64DF
|
Untitled
Abstract: No abstract text available
Text: MB84VF5F5F5J2-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
|
Original
|
PDF
|
MB84VF5F5F5J2-70
F0302
|
Untitled
Abstract: No abstract text available
Text: MB84VZ064D-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
|
Original
|
PDF
|
MB84VZ064D-70
F0302
|
TFBGA107
Abstract: ddr flash "ready not busy" BGA bga 10x13 NAND FLASH BGA NAND*N M65KA512AB NAND01G-N NAND01GR3N6 NAND01GR4N5 NAND01G
Text: NAND01G-N 1 Gbit x8/x16 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package PRELIMINARY DATA Features summary • Multi-chip Package – NAND Flash Memory – 512 Mbit or 1 Gbit (x8/x16) Large Page Size NAND Flash Memory
|
Original
|
PDF
|
NAND01G-N
x8/x16)
TFBGA107
ddr flash "ready not busy"
BGA bga 10x13
NAND FLASH BGA
NAND*N
M65KA512AB
NAND01G-N
NAND01GR3N6
NAND01GR4N5
NAND01G
|
BGA-80P-M01
Abstract: LGA-80 FPT-8P-M02 LGA-28 lcc 910 fpt 120 240 FPT-16P-M06 FPT-24P-M01 BGA63 FPT-8P-M01
Text: Taping Dimensions 6.4 Taping Dimensions 6.4.1 Embossed tapes standard: conforms with JIS (1) Reel dimensions W2 W1 B A r D C E (Dimensions in mm) Tape width 12mm 16mm 24mm 32mm 44mm Symbol 330 ± 2.0 A 254 ± 2.0 B 100 +2.0 −0 C 13 ± 0.2 D 21 ± 0.8 2 ± 0.5
|
Original
|
PDF
|
FPT-8P-M01
FPT-8P-M02
FPT-14P-M04
FPT-16P-M03
FPT-16P-M06
FPT-202
LGA-97P-M01
LGA-130P-M01
LGA-144P-M02
LGA-144P-M04
BGA-80P-M01
LGA-80
FPT-8P-M02
LGA-28
lcc 910
fpt 120 240
FPT-16P-M06
FPT-24P-M01
BGA63
FPT-8P-M01
|
