Untitled
Abstract: No abstract text available
Text: ESD Protection of Set Top Appliances with PolySurg ESD Suppressors Why are Set Top boxes vulnerable to ESD The more sophisticated boxes include a variety of I/O jacks such as front panel USB, Audio/Video, S-Video, rear panel Satellite, cable, TV antenna, Wireless transmitter connection,
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OC-129
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Untitled
Abstract: No abstract text available
Text: SKKT 15, SKKH 15 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 0 Thyristor / Diode Modules LMNO LMMO= LDMO L XVV ¥VV TAVV TBVV L @VV UVV TCVV TRVV PISL Q TB S G*2 > TUVW I5 Q XB YEH NZZI TB[V@? NZZ$ TB[V@? NZZI TB[VU? NZZ$ TB[VU? NZZI TB[TC? NZZ$ TB[TC? NZZI TB[TR?
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1SV28
Abstract: No abstract text available
Text: 1SV286 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1'st OSC TUNING SILICON EPITAXIAL PLANAR TYPE 1 SV2 8 6 Unit in mm High Capacitance Ratio : C2V ! C20V = 8-9 TYP. Low Series Resistance : rs = 0.730 (TYP.) Useful for Small Size Tuner. •
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1SV286
0014g
1SV28
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HN2D01F
Abstract: lu2b
Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. • +0.2 2.8 - 0.3 +0.2 1.6-0.1 H N 2D01F is composed of 3 independent diodes. • Low Forward Voltage • F a st Reverse Recovery Time : trr = 1.6ns Typ.
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HN2D01F
HN2D01F
961001EAA2'
lu2b
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1SV286
Abstract: C20V
Text: TOSHIBA 1SV286 1 SV2 8 6 TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1'st OSC TUNING SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C2V / C20V = 8-9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner.
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1SV286
C2y/C20V
0014g
f-470MHz
C20V
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1SV286
Abstract: C20V
Text: TOSHIBA 1SV286 1 SV2 8 6 TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1'st OSC TUNING SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C2V / C20V = 8-9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner.
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1SV286
C2y/C20V
10kil)
0014g
f-470MHz
1SV286
C20V
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Untitled
Abstract: No abstract text available
Text: 1SV286 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 8 6 Unit in mm CATV CONVERTER 1'st OSC TUNING • High Capacitance Ratio : C2V ! C20V = 8.9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner.
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1SV286
0014g
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1-1G1A
Abstract: 1SV286 C20V
Text: TO SH IBA 1SV286 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 286 CATV CONVERTER 1'st OSC TUNING • High Capacitance Ratio : C2V / C20V - 8-9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)
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1SV286
0014g
f-470MHz
-X100
1-1G1A
1SV286
C20V
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 1SV286 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 286 CATV CONVERTER 1'st OSC TUNING • • • High Capacitance Ratio : C2V / C20V - 8-9 TYP. Low Series Resistance : rs = 0.730 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)
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1SV286
0014g
470MHz
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV286 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 CATV CONVERTER 1'st OSC TUNING Unit in mm • High Capacitance Ratio : C 2 V /C 20 V —^.9 TYP. • Low Series Resistance • : r$ = 0.73il (TYP.) Useful for Small Size Tuner.
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1SV286
0014g
--28V
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PS2002B
Abstract: PS2002 transistor replacement 0z99
Text: NEC PHOTO COUPLER BfCTRON OEVICE PS2002B PHOTO CO U PLER IN D U ST R IA L U SE -N EP O C SERIES - DESCRIPTION The PS2002B is an optically coupled isolator containing a GaAsP light emitting diode and an NPN silicon darlington- connect ed phototransistor.
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PS2002B
PS2002B
-L50-
2500VDC
100ft
100il
Ul/10
PS2002
transistor replacement
0z99
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SS360 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE < ; 1 < ; a 3 n U nit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. 1.6db 0.2 • Sm all Package • Low Forward Voltage • F a st Reverse Recovery Time : trr = i.6 n s Typ. 0.8±0.1 ho : Vjr = 0.92V (Typ.)
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1SS360
01//F
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SS309 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS3 09 ULTRA HIGH SPEED SWITCHING APPLICATIONS. U n it in mm +0.2 1 .8 -0.3 + 0.2 .6 • Sm a ll Package : SC-74A • Low Forw ard Voltage : V jr 3 = 0.90V (Typ.) • Fa st Reverse Recovery Tim e :
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1SS309
SC-74A
--6V50ns
961001EAA2'
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ic vrm
Abstract: No abstract text available
Text: TOSHIBA 1SS308 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS3Q8 ULTRA HIGH SPEED SWITCHING APPLICATIONS. U n it in mm + 0.2 1 .8 -0.3 + 0.2 .6 • Sm a ll Package : SC-74A • Low Forw ard Voltage : V jr 3 = 0.92V (Typ.) • Fa st Reverse Recovery Tim e :
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1SS308
SC-74A
961001EAA2'
ic vrm
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502-HJ
Abstract: 3R3TI30E-080
Text: 3R3TI30E-080 4 st — K •U " 'f ' J X ^ i l — ;u : Outline Drawings DIODE and TYRISTOR MODULE • 4 # d i ■ Features • ^ ^ ^ ' < ' > ^ — '> 3 • 7 ^ Glass Passivation Chip Easy Connection • i&fi&ffi Insulated Type » <i T«.0 1 O.i 1 ».D i t
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3R3TI30E-080
50/60HzjE3Â
502-HJ
3R3TI30E-080
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OE R611
Abstract: No abstract text available
Text: 3R3TI30E-080 4 st — K •U " 'f ' J X ^ i l — ;u : Outline Drawings DIODE and TYRISTOR MODULE • 4 # d i ■ Features • ^ ^ ^ ' < ' > ^ — '> 3 • 7 ^ Glass Passivation Chip Easy Connection • i&fi&ffi Insulated Type » <i T«.0 1 O.i 1 ».D i t
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3R3TI30E-080
I95t/R89)
OE R611
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C 5388
Abstract: A-128 ERB38 T151 T460 T760 T810 T930 pic t460
Text: ERB38 o .8A re) : Outline Drawings f4 * - Y FA ST RECOVERY DIODE 1 0.8 28MIN 28MIN- Features Super high speed sw itching : Marking \tjz A5-3-K: ö Color code : White Low VF in turn on • a t s ia t t «5£ » £ Abridged type name H igh reliability Voltage class
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ERB38
30S3-^
eaTa30
I95t/R89)
Shl50
C 5388
A-128
T151
T460
T760
T810
T930
pic t460
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2D01 FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 2 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • H N 2 D 0 1 FU is composed of 3 independent diodes. • Low Forw ard Voltage • Fa st Reverse Recovery Tim e : tr r = 1.6ns Typ.
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HN2D01
01//F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP598G T O SH IB A PHO TOCO UPLER PHOTO RELAY TLP598G Unit in mm T EL E C O M M U N IC A T IO N D A T A A C Q U ISIT IO N M E A SU R E M E N T IN ST R U M EN T AT IO N The TOSHIBA TLP598G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a
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TLP598G
TLP598G
11-9A1
UL1577,
E67349
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP599B T O SH IB A PHO TOCO UPLER PHOTO RELAY TLP599B T EL E C O M M U N IC A T IO N U nit in mm D A T A A C Q U ISIT IO N M E A SU R E M E N T IN ST R U M EN T AT IO N 6 Ti The TOSHIBA TLP599B consists of a gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a six lead
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TLP599B
TLP599B
UL1577,
E67349
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP598B T O S H IB A PH O T O C O U PLER PH O TO R ELA Y TLP598B TELE C O M M U N IC A T IO N U nit in mm D ATA A C Q UISITIO N M E A S U R E M E N T IN ST R U M EN T A TIO N The TO SH IBA TLP598B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS F E T in a
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TLP598B
TLP598B
200mA
2500Vrms
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50-08N
Abstract: 50-12N03 50-08N03 50-16N 50-18N03 50-18N vuo 50-08N03
Text: 4bñb22b DODICI OQl « I X Y □IXYS VUO 50 IdAV = 58 A VRRM = 800-1800 V Three Phase Rectifier Bridges V RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type fet F ti "it VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* I—► —
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50-08N03
50-12N03
50-14N03
50-16N03
50-18N03*
50-08N
50-16N
50-18N03
50-18N
vuo 50-08N03
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Untitled
Abstract: No abstract text available
Text: n ix Y S VUM 33-05 Power MOSFET Stage for Boost Converters I d 25 V Ds s R DS on Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 Type • VUM 33-05N v DSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kfì Continuous
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33-05N
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Untitled
Abstract: No abstract text available
Text: nixY S VUM 24-05 Power MOSFET Stage for Boost Converters ^D25 V Dss ^D S o n Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 T ype I v DSS V DGR V GS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 k fì Continuous A A A 170 W
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