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    ST BUX 25 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    Tektronix P6019

    Abstract: BUY70A p6020 175L BUY70B BUY70C P6019 P6042 t33 38 ice1a
    Text: TEXAS IN STR -COPTO} ^ 2 DËTJfiTblTab DOBtibag □ •096^1726 TEX A S ,• r '. C 62C 1NSTR O P TO 36683 D BUY70A, BUY70B, BUY70C N-P-N SILICON POWER TRANSISTORS ' T - 7 3 - / 3 O C TO B E R 1 9 8 2 - R E V IS E D O C TO B E R 1 9 8 4 • 75 W a t 25°C Case Temperature


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    BUY70A, BUY70B, BUY70C BUY70A BUY70B BUY70C T-33-/3 Tektronix P6019 p6020 175L P6019 P6042 t33 38 ice1a PDF

    BUX81

    Abstract: CER500 BUX80 Q62901-B50 Q68000-A4634 Q68000-A4675 siemens afe circuit diagram t335
    Text: 2SC D Bi 023SbOS OOGMÖS? 7 » S I E G T- 1 1 - /3 NPN Silicon Power Transistors BUX 80 BUX 81 -SIEMENS AKTIENGESELLSCHAF- BUX 80 and BUX 81 are triple diffused NPN silicon power transistors in a case similar to TO 3 3 A 2 DIN 41872 . The collector is electrically connected to the case. The transistors


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    S23SbOS Q68000-A4634 Q68000-A4675 Q62901-B11 Q62901-B50 BUX81 23SfeiQ5 BUX80 trs30ns CER500 siemens afe circuit diagram t335 PDF

    transistor bux 39

    Abstract: transistor BUX BUX51 bux THOMSON bux c BUX51N NPN BUX51 BUX 51 transistor BUX 51
    Text: BUX 51 BUX 51 N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA T R A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E TENTATIVE DATA N O T IC E P R O V IS O IR E Driver stage for high voltage power transistor 160 V BUX 51 N 200 V (BUX 51) 3,5


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    10/is transistor bux 39 transistor BUX BUX51 bux THOMSON bux c BUX51N NPN BUX51 BUX 51 transistor BUX 51 PDF

    bux c

    Abstract: bux diode BUX29 BUX28 Q62702 Q62901-B50 Q62702-U258
    Text: BUX 28 BUX 29 N PIM -Silizium -Darlington-Leistungstransistoren B U X 28 und B U X 29 sind dreifachdiffundierte monolithische NPN-Darlington-Leistungstransistoren im Gehäuse 3 A 2 D IN 41 872 TO-3 . Die Kollektoren sind mit dem Gehäuse elektrisch verbunden. Die Widerstände zwischen Basis und den Emittern sowie die Invers­


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    BUX28 BUX29 Q62702â Q62702-U259 Q62901-B11â Q62901-B50 bux c bux diode Q62702 Q62901-B50 Q62702-U258 PDF

    BU406

    Abstract: BU407 N-P-N SILICON POWER TRANSISTORS t317 texas transistors
    Text: TEXAS I N S T R -COPTO} ÔÔ61726 TEXAS ta INSTR DE | f l cltI17Bt. 003titi3S 62C 3 6 6 3 5 OPTO BU406, BU407 N-P-N SILICON POWER TRANSISTORS - T - 2 3 - U O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 • 60 W a t 2 5 ° C Case Temperature


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    GG3bb35 BU406, BU407 110-Degree to-220ab BU406 BU407 300fis, 003bb3T N-P-N SILICON POWER TRANSISTORS t317 texas transistors PDF

    transistors bu 407

    Abstract: Transistors BD 330 bdx 330
    Text: TEXAS IN S T R -COPTO} ^2 DE | f l cltI17Bt. 003titi3S 62C 3 6 6 3 5 ÔÔ61726 TEXAS INSTR OPTO BU406, BU407 N-P-N SILICON POWER TRANSISTORS -T - 2 3 - U O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 • 60 W a t 2 5 °C Case Temperature •


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    cltI17Bt. 003titi3S BU406, BU407 10-Degree transistors bu 407 Transistors BD 330 bdx 330 PDF

    TIP29

    Abstract: BUX84 BUX85 lb102
    Text: TEXAS INSTR -COPTO} D F f i T b l 75 b QOHbbbT ti Ô 9 6 1 7 2 6 - TE XA S INSTR <OPTO) 62C 36669 BUX84, BUX85 N-P-N SILICON POWER TRANSISTORS ~ T - 3 3 '/ NOVEMBER 1 983 - REVISED OCTOBER 1984 40 W at 25°C Case Temperature 2 A Continuous Collector Current


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    BUX84, BUX85 T0-22QAB BUX84 003bb73 BUX85 TIP29 lb102 PDF

    BU326

    Abstract: BU326-BU326A 331Z BU326A st bux
    Text: TEXAS INSTR -COPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 t 7 26 TEXAS INSTR~<OPTO> 62C 3 6 6 2 9 D BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current


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    BU326, BU326A BU326 BU326-BU326A 331Z st bux PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    g3jc

    Abstract: No abstract text available
    Text: INSTR -COPTO} bE »F| flìtilTEh D03tiLll 62C 36611 ^§5T756~~TE>fS5 TRSTR 50P T0 ' T -3 3 -3 1 BDW24, BDW24A, BDW24B, BDW24C P-N-P SILICON POWER DARLINGTONS * RE V ISE D OC TO BER 1984 50 W at 25°C Case Temperature 6 A Continuous Collector Current Min hFE of 750 at 2 A, 3 V


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    D03tiLll 5T756~ BDW24, BDW24A, BDW24B, BDW24C g3jc PDF

    TRANSISTOR K 135 J 50

    Abstract: BUX 41 BUX41 transistor BUX 48
    Text: NPN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TR A N SIS TO R S IL IC IU M NPN, MESA T R IP LE D IF F U S E ^ P re fe rre d device D isp o sitif recommandé High speed, high curre n t, high pow er transistor Transistor de puissance rapide, fo rt courant


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    BUX41 CB-19 TRANSISTOR K 135 J 50 BUX 41 BUX41 transistor BUX 48 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB LTD 37E D j u l o e sge NEW PRODUCT • Û1331Û7 SEMELAB BUX 348CPF NPN PLANAR T R A N SIST O R MULTI EMITTER IO N-IM PLANTED FOR FAST SW ITCH IN G APPLICATIO NS M EC H A N IC A L DATA


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    00DQ2EQ 348CPF 300fis PDF

    BUX51

    Abstract: transistor 3005 ET 3005 transistor bux 39 transistor 3005 2 NPN BUX51 transistor BUX 22 bux c pilote 5mhz L 3005 TRANSISTOR
    Text: BUX 51 BUX 51 N NPN S ILIC O N TR A N S IS TO R , T R IP L E D IF F U S E D MESA T R A N S IS T O R N P N S IL IC IU M , M E S A T R IP L E D I F F U S E T E N T A T IV E D A T A N O T I C E P R O V IS O IR E Driver stage fo r high voltage power transistor


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    10/is BUX51 transistor 3005 ET 3005 transistor bux 39 transistor 3005 2 NPN BUX51 transistor BUX 22 bux c pilote 5mhz L 3005 TRANSISTOR PDF

    X53A

    Abstract: BDX63A
    Text: texas~ instr -c o p t o j bs dF | 003t,bi? =i _ T-33-29_ — g§5T7^~TEXAS 62 C INSTR OPTO 36617 D BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 60 W at 25°C Case Temperature 8 A Continuous Collector Current


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    T-33-29_ BDX53, BDX53A, BDX53B, BDX53C X53A BDX63A PDF

    transistor BUX 48

    Abstract: bux 42 emetteur BUX42 transistor BUX
    Text: *BUX42 N P N S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TR A N S IS T O R S IL IC IU M NPN. M ESA T R IP L E D IF F U S E ^ P re ferred device D isp o sitif recommandé High speed, high curre n t, high pow er transistor T ransistor de puissance rapid e, f o r t c o u ra n t


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    BUX42 CB-19 transistor BUX 48 bux 42 emetteur BUX42 transistor BUX PDF

    Untitled

    Abstract: No abstract text available
    Text: TEXAS INSTR {OPTO} Ö 9 6 1 7 2 6 T EX A S D G3 bb b 3 IN S T R 62C O PTO 36663 B IIY Q 3 RI IYQ*5 N-P-N SILICON POWER TRANSISTORS Y - 3 s ~ n OCTOBER 1982 - REVISED OCTOBER 19B4 60 W at 5 0 ° C Case Temperature 6 A Continuous Collector Current 8 A Peak Collector Current


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: .7*113237 0026=137 3 W Ê Fi I '33>~iS S C S - T H O M S O N [M û œ a J tm M M S S G S-TH0MS0N BUX 25 3GE D NPN SILICON TRANSISTOR • HIGH SPEED, HIGH VOLTAGE, HIGH POWER TRANSISTOR ■ SWITCHING AND AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Sym bol


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    T-33-15 PDF

    D895

    Abstract: BD 895 bdw 34 a
    Text: b5 TEXAS INSTR -COPTO* DeT | ST b lT H b DDBbS^'ì 62C 3 6 5 9 9 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 T-33-29 • 70 W a t 2 5 °C Case Temperature • 8 A Continuous Collector Current


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    BD895, BD895A BD897, BD897A, BD899, BD899A, BD901 T-33-29 -220AB BD895 D895 BD 895 bdw 34 a PDF

    RCA 40874

    Abstract: 2N6175 2N3055 specification 2N6179 2N6474 JAN 2n3055 pnp transistor 2N6175 rca 2n1485 2N5296 RCA rca Transistors 4a 322
    Text: H I G H - V O L T A G E N -P -N & P -N -P P O W E R T Y P E S 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. P y “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. jTO-39»* lc > - 1 A max. P y - 10 W max. (TO-39 * 4 2 x4 2 4 2 x4 2


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    TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 RCA 40874 2N6175 2N3055 specification 2N6179 2N6474 JAN 2n3055 pnp transistor 2N6175 rca 2n1485 2N5296 RCA rca Transistors 4a 322 PDF

    BU 450 bdx

    Abstract: l75b
    Text: TEXAS INSTR Î0PTÔ3D F f lT b l7 5 b Ö 9 6 1 7 2 6 T EX A S IN S T R <OPTO) 0 0 3 ^ ^ 62C 3 6 6 6 9 BUX84, BUX85 N-P-N SILICON POWER TRANSISTORS T NOVEMBER 1983 - REVISED OCTOBER 1984 4 0 W at 2 5 ° C Case Temperature 2 A Continuous Collector Current 3 A Peak Collector Current


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    BUX84, BUX85 T0-22QAB hti73 T-33-// BU 450 bdx l75b PDF

    BD901

    Abstract: BD897 case BD901 1N914 BD895 BD895A BD897A BD899 BD899A D03bt
    Text: TEXAS I N S T R -COPTO* b5 D eT | ODBbS'i'i 62C 36599 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 • 70 W at 2 5 °C Case Temperature T -3 3 -2 9 • 8 A Continuous Collector Current


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    BD895, BD895A BD897, BD897A, BD899, BD899A, BD901 T-33-29 TQ-220AB BD895 BD897 case BD901 1N914 BD897A BD899 BD899A D03bt PDF

    BUX40

    Abstract: transistor BUX 48 bux 40 sonde de temperature
    Text: *BU X 40 N PN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TR AN S IS TO R S IL IC IU M NPN, MESA T R IP L E D IF F U S E ^ P r e fe rr e d device D is p o s itif re c o m m a n d é High speed, high current, high pow er transistor T ransistor de puissance rapide, f o r t couran t


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    BUX40 CB-19 view10 BUX40 transistor BUX 48 bux 40 sonde de temperature PDF

    T726

    Abstract: 1N914 BDX53 BDX53A BDX53B BDX53C BDX63 BDX63A 60si50 ION-M
    Text: T E X A S IN ST R bE -COPTO} D eT| STblVSb DD3thl7 1 _T-33-29_ — g§5T7^~TEXAS~TNSTR 62C 36617 COPTO BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 60 W at 2 5 °C Case Temperature


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    T-33-29 BDX53, BDX53A, BDX53B, BDX53C T0-220AB BDX63 BDX63A BDX53B BDX53C T726 1N914 BDX53 BDX53A 60si50 ION-M PDF

    RCA 40636 transistor

    Abstract: rca 40636 rca 40327 RCA 40325 40327 rca RCA 2N3055 transistor 2N3055 RCA rca 40363 RCA 40321 BUX 115
    Text: H I G H - V O L T A G E N -P -N & P -N -P P O W E R T Y P E S 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í lt > 1 A max. Pt - 10 W max. jTO-39»* lc > -1 A max. Py - 10 W max. (TO-39 * 32 x 32 a 42x42 42x42


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    TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 RCA 40636 transistor rca 40636 rca 40327 RCA 40325 40327 rca RCA 2N3055 transistor 2N3055 RCA rca 40363 RCA 40321 BUX 115 PDF